摘要:
A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要:
An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.
摘要:
An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.
摘要:
A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution.
摘要:
An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R2 is H or monovalent hydrocarbon, R3 and R4 are H or monovalent hydrocarbon, or R3 and R4, taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.
摘要翻译:螺环结构的酸不稳定酯单体具有式(1)其中Z是具有可聚合双键的一价基团,X是形成环戊烷,环己烷或降冰片烷环的二价基团,R 2是H或一价烃,R 3和 R 4为H或一价烃,或者R 3和R 4一起代表形成环戊烷或环己烷环的二价基团,n为1或2.由酸不稳定酯单体获得的聚合物具有如此高的反应性 酸催化的消除反应,聚合物可用于配制具有高分辨率的抗蚀剂组合物。
摘要:
An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R2 is H or monovalent hydrocarbon, R3 and R4 are H or monovalent hydrocarbon, or R3 and R4, taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.
摘要翻译:螺环结构的酸不稳定酯单体具有式(1)其中Z是具有可聚合双键的一价基团,X是形成环戊烷,环己烷或降冰片烷环的二价基团,R 2是H或一价烃,R 3和 R 4为H或一价烃,或者R 3和R 4一起代表形成环戊烷或环己烷环的二价基团,n为1或2.由酸不稳定酯单体获得的聚合物具有如此高的反应性 酸催化的消除反应,聚合物可用于配制具有高分辨率的抗蚀剂组合物。
摘要:
A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.
摘要:
A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
摘要:
A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要:
A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.