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1.发明申请FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权氟化单体，氟化聚合物，耐腐蚀组合物和方法公开(公告)号：US20110151381A1
公开(公告)日：2011-06-23
申请号：US12952304
申请日：2010-11-23
CPC分类号： C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08K5/36 , C08L33/14 , C08L33/16 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08L2666/04
摘要： A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要翻译： 氟化单体具有式（1）其中R1是H，F，甲基或三氟甲基，R2是可以具有卤素或氧的一价烃基，A是二价烃基，k1是0,1或2.聚合物 来自氟化单体的化合物可赋予适当的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物中的添加剂聚合物。
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2.发明授权Fluorinated monomer, fluorinated polymer, resist composition, and patterning process 有权氟化单体，氟化聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08945809B2
公开(公告)日：2015-02-03
申请号：US12952304
申请日：2010-11-23
IPC分类号： G03F7/004 , G03F7/20 , G03F7/039 , C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08L33/14 , C08K5/36 , C08L33/16
CPC分类号： C07C69/73 , C08F220/22 , C08F220/24 , C08F220/26 , C08F222/18 , C08F222/22 , C08K5/36 , C08L33/14 , C08L33/16 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08L2666/04
摘要： A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 is a monovalent hydrocarbon group which may have halogen or oxygen, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要翻译： 氟化单体具有式（1）其中R1是H，F，甲基或三氟甲基，R2是可以具有卤素或氧的一价烃基，A是二价烃基，k1是0,1或2.聚合物 来自氟化单体的化合物可赋予适当的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物中的添加剂聚合物。
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公开(公告)号：US08597869B2
公开(公告)日：2013-12-03
申请号：US13243204
申请日：2011-09-23
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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4.发明授权Preparation of 2,2-bis (fluoroalkyl) oxirane and preparation of photoacid generator therefrom 有权2,2-双（氟烷基）环氧乙烷的制备及其制备光致酸产生剂公开(公告)号：US08686166B2
公开(公告)日：2014-04-01
申请号：US13526569
申请日：2012-06-19
IPC分类号： C07D301/27 , C07D301/02 , C07C69/74 , C07C309/00
CPC分类号： C07D301/24 , C07C303/32 , C07C381/12 , C07C2603/74 , C07D303/08 , C07C309/08 , C07C309/12
摘要： A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R1 and R2 are fluoroalkyl groups, R3 and R4 are hydrogen or monovalent hydrocarbon groups, X is chlorine, bromine or —OSO2R5 group, and R5 is alkyl or aryl.
摘要翻译： 通过在碱性条件下使氟化醇（1）与氯化，溴化或磺酰化剂反应以形成环氧乙烷前体（2）并使环氧乙烷前体环闭合来制备2,2-双（氟烷基）环氧乙烷（A） 在基本条件下 R1和R2是氟烷基，R3和R4是氢或一价烃基，X是氯，溴或-OSO2R5基，R5是烷基或芳基。
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5.发明授权公开(公告)号：US08647808B2
公开(公告)日：2014-02-11
申请号：US13081182
申请日：2011-04-06
IPC分类号： G03F7/004 , C08F24/00 , C08F220/24 , G03F7/039
CPC分类号： C07C69/013 , C07C69/653 , C07D317/34 , C07D317/72 , C08F24/00 , C08F220/22 , C08F220/24 , C08F220/28 , C08F222/18 , C08F222/20 , C08F222/22 , G03F7/0046 , G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： A fluorinated monomer has formula (1) wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are H or a monovalent hydrocarbon group, R4 to R6 each are a monovalent fluorinated hydrocarbon group, A is a divalent hydrocarbon group, and k1 is 0, 1 or 2. A polymer derived from the fluorinated monomer may be endowed with appropriate water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer in formulating a resist composition.
摘要翻译： 氟化单体具有式（1）其中R 1为H，F，甲基或三氟甲基，R 2和R 3为H或一价烃基，R 4至R 6各为一价氟化烃基，A为二价烃基，k1 衍生自氟化单体的聚合物可赋予适当的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物中的添加剂聚合物。
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6.发明申请CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS 审中-公开用于ArF渗透成像和图案形成过程的化学放大正电阻组合公开(公告)号：US20130034813A1
公开(公告)日：2013-02-07
申请号：US13558855
申请日：2012-07-26
IPC分类号： G03F7/027 , C07C381/12 , G03F7/20 , C07C51/09
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
摘要翻译： 一种化学放大正型抗蚀剂组合物，其包含（A）3,3,3-三氟-2-羟基-2-三氟甲基丙酸的锍盐，（B）酸产生剂，（C）基础树脂和（D） 有机溶剂适用于ArF浸渍光刻。 羧酸锍盐是高疏水性的，并且在浸入水中很少浸出。 由于受控的酸扩散，可以构建高分辨率的图案。
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7.发明授权Polymerizable ester compound, polymer, resist composition, and patterning process 有权可聚合酯化合物，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08795946B2
公开(公告)日：2014-08-05
申请号：US13548654
申请日：2012-07-13
申请人： Koji Hasegawa , Masayoshi Sagehashi , Yuuki Suka , Masashi Ilo
发明人： Koji Hasegawa , Masayoshi Sagehashi , Yuuki Suka , Masashi Ilo
CPC分类号： C08F20/28 , C07D493/04 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： Polymerizable ester compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 is an acid labile group, Aa is a divalent hydrocarbon group which may be separated by —O— or —C(═O)—, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent developed properties.
摘要翻译： 具有式（1）的可聚合的酯化合物是新的，其中R1是H，F，甲基或三氟甲基，R2是酸不稳定基团，Aa是可以被-O-或-C（= O） - ，并且k1为0或1.它们可用作产生对辐射透明的聚合物的纳米级; 500nm。 包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物显示出优异的显影性能。
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公开(公告)号：US20120100486A1
公开(公告)日：2012-04-26
申请号：US13243204
申请日：2011-09-23
IPC分类号： G03F7/20 , C07J33/00 , C07D333/46
CPC分类号： C07D493/18 , C07D333/46 , C07D409/12 , C07J31/006 , C07J33/002 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。
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9.发明授权Acetal compounds and their preparation, polymers, resist compositions and patterning process 有权乙缩醛化合物及其制备方法，聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US08420290B2
公开(公告)日：2013-04-16
申请号：US12625711
申请日：2009-11-25
CPC分类号： C08F32/08 , C07C41/16 , C07C41/18 , C07C41/22 , C07C41/32 , C07C67/11 , C07C69/54 , C07C2603/74 , G03F7/0045 , G03F7/0397 , G03F7/2041 , C07C43/188 , C07C43/192
摘要： An acetal compound of formula (1) is provided wherein R1 is H, methyl or trifluoromethyl, R2 is a monovalent C1-C10 hydrocarbon group, R3 and R4 are H or a monovalent C1-C10 hydrocarbon group, R2 and R3 may together form an aliphatic hydrocarbon ring, and X1 is a single bond or a divalent C1-C4 hydrocarbon group. A polymer comprising recurring units derived from the acetal compound is used as a base resin to formulate a resist composition which exhibits a high resolution when processed by micropatterning technology, especially ArF lithography.
摘要翻译： 提供式（1）的缩醛化合物，其中R1是H，甲基或三氟甲基，R2是一价C1-C10烃基，R3和R4是H或一价C1-C10烃基，R2和R3可以一起形成 脂族烃环，X1是单键或二价C1-C4烃基。 使用包含衍生自缩醛化合物的重复单元的聚合物作为基础树脂，以配制在通过微图案技术特别是ArF光刻处理时显示出高分辨率的抗蚀剂组合物。
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10.发明授权Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition 有权聚合物，化学放大抗蚀剂组合物和使用所述化学放大抗蚀剂组合物的图案化工艺公开(公告)号：US08900793B2
公开(公告)日：2014-12-02
申请号：US13476700
申请日：2012-05-21
CPC分类号： G03F7/2041 , C08F24/00 , C08F220/38 , G03F7/0045 , G03F7/0397 , G03F7/11 , G03F7/30 , Y10S430/111
摘要： There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.
摘要翻译： 公开了具有下述通式（1）所示的重复单元的聚合物。 在使用诸如ArF准分子激光束和EUV作为光源的高能量光束的光刻中可以存在：（1）提供具有与基板的适当粘合性并且能够形成 具有优异分辨率的图案，特别是优异的矩形图案，（2）含有所述聚合物的化学放大抗蚀剂组合物，和（3）使用所述化学放大抗蚀剂组合物的图案化工艺。
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