公开(公告)号：US10236304B2

公开(公告)日：2019-03-19

申请号：US15369678

申请日：2016-12-05

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/00 ,  H01L27/12 ,  H01L29/786

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170170333A1

公开(公告)日：2017-06-15

申请号：US15370253

申请日：2016-12-06

申请人： Shinji MATSUMOTO ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Shinji MATSUMOTO ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L27/12 ,  G09G5/10 ,  H01L29/66

CPC分类号： H01L29/78696 ,  G09G3/3233 ,  G09G3/344 ,  G09G3/3648 ,  G09G3/38 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2251/533

摘要： A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

公开(公告)号：US10790308B2

公开(公告)日：2020-09-29

申请号：US16131593

申请日：2018-09-14

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/786 ,  H05B33/14 ,  H05B33/02 ,  G09F9/30 ,  H01L27/32 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/15

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.

公开(公告)号：US10600916B2

公开(公告)日：2020-03-24

申请号：US15370392

申请日：2016-12-06

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Shinji Matsumoto ,  Ryoichi Saotome ,  Yuki Nakamura ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3225 ,  G09G3/00 ,  H01L29/49 ,  H01L27/32

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

公开(公告)号：US10312373B2

公开(公告)日：2019-06-04

申请号：US15349211

申请日：2016-11-11

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： G09G3/36 ,  G09G3/34 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/12 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/02 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

摘要： A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.

公开(公告)号：US20190157313A1

公开(公告)日：2019-05-23

申请号：US16255035

申请日：2019-01-23

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/786

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170162601A1

公开(公告)日：2017-06-08

申请号：US15369678

申请日：2016-12-05

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/49 ,  G09G3/20 ,  H01L29/786

CPC分类号： H01L27/1218 ,  H01L29/78603

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20170116916A1

公开(公告)日：2017-04-27

申请号：US15289243

申请日：2016-10-10

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： G09G3/3225 ,  G09G3/34 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G3/3406 ,  G09G3/344 ,  G09G3/348 ,  G09G3/3648 ,  G09G2300/0417 ,  G09G2310/0264 ,  H01L21/823462 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.

公开(公告)号：US11069780B2

公开(公告)日：2021-07-20

申请号：US16353872

申请日：2019-03-14

申请人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

发明人： Ryoichi Saotome ,  Naoyuki Ueda ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Sadanori Arae ,  Minehide Kusayanagi

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L21/28 ,  H01L29/786

摘要： A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.

公开(公告)号：US11049951B2

公开(公告)日：2021-06-29

申请号：US16425446

申请日：2019-05-29

申请人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

发明人： Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae ,  Minehide Kusayanagi ,  Yuichi Ando

IPC分类号： H01L29/51 ,  H01L21/02 ,  C09D1/00 ,  C09D5/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/318

摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.