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    Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
    12.
    发明授权
    Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor 有权
    太阳能电池的制造方法，薄膜半导体的制造方法，薄膜半导体的分离方法以及半导体的形成工序

    公开(公告)号：US06331208B1

    公开(公告)日：2001-12-18

    申请号：US09310954

    申请日：1999-05-13

    申请人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Masaaki Iwane

    发明人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Masaaki Iwane

    IPC分类号： C30B2518

    CPC分类号： H01L31/18 ,  C30B25/18 ,  C30B29/06 ,  C30B33/00 ,  H01L21/306 ,  H01L21/76898 ,  H01L31/1804 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/915

    摘要： A crystal silicon substrate is anodized to form a porous layer thereon, and a thin-film crystal is grown by epitaxial growth on the porous layer. Openings extending from the surface of the grown crystal and reaching the porous layer are provided by applying laser beams, and the porous layer is selectively etched through the openings to separate the thin-film crystal from the substrate. The thin-film crystal separated is transferred to another supporting substrate to form a solar cell. Also, porous silicon layers serving as separation layers are formed on a substrate silicon wafer on both sides, and thin-film semiconductor (thin-film single-crystal silicon) layers are formed by epitaxial growth on both porous silicon layers. Then, through openings are made in the thin-film single-crystal silicon layers. Thereafter, the porous silicon layers are removed by wet etching carried out through the openings to separate two thin-film single-crystal silicon layers simultaneously from the wafer. When solar cells are formed, the thin-film single-crystal silicon layers are used as electricity generation layers, and the openings as through holes for a contact electrode. A back electrode is further provided on each thin-film single-crystal silicon layer, and this is attached to a base conductive substrate via an insulating layer.

    摘要翻译： 阳极氧化晶体硅衬底以在其上形成多孔层，并且通过在多孔层上外延生长生长薄膜晶体。 通过施加激光束从生长的晶体的表面延伸并到达多孔层的开口是通过开口选择性地蚀刻，并将薄膜晶体从衬底分离出来的。 将分离的薄膜晶体转移到另一个支撑基板上以形成太阳能电池。 此外，在两面的基板硅晶片上形成用作分离层的多孔硅层，并且通过在两个多孔硅层上外延生长形成薄膜半导体（薄膜单晶硅）层。 然后，在薄膜单晶硅层中形成通孔。 此后，通过通过开口进行的湿蚀刻除去多孔硅层，以从晶片同时分离两个薄膜单晶硅层。 当形成太阳能电池时，薄膜单晶硅层用作发电层，开口用作接触电极的通孔。 在每个薄膜单晶硅层上还设置有背电极，并且经由绝缘层将其附接到基底导电基板。

    Anodizing apparatus
    13.
    发明授权
    Anodizing apparatus 失效
    阳极氧化装置

    公开(公告)号：US06818104B2

    公开(公告)日：2004-11-16

    申请号：US10669002

    申请日：2003-09-24

    申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    IPC分类号： C25D1700

    CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

    摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

    摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

    Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
    15.
    发明授权
    Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus 失效
    半导体部件的制造方法，太阳能电池的制造方法以及阳极氧化装置

    公开(公告)号：US06664169B1

    公开(公告)日：2003-12-16

    申请号：US09586887

    申请日：2000-06-05

    申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    IPC分类号： H01L2176

    CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

    摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

    摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

    Process for producing single crystal silicon wafers
    16.
    发明授权
    Process for producing single crystal silicon wafers 失效
    制造单晶硅片的工艺

    公开(公告)号：US07077901B2

    公开(公告)日：2006-07-18

    申请号：US10402214

    申请日：2003-03-31

    申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

    发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

    IPC分类号： C30B19/02

    CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

    摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

    摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

    Solar cell module and method of producing the same
    20.
    发明授权
    Solar cell module and method of producing the same 失效
    太阳能电池组件及其制造方法

    公开(公告)号：US06384313B2

    公开(公告)日：2002-05-07

    申请号：US09790589

    申请日：2001-02-23

    申请人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

    发明人： Katsumi Nakagawa ,  Shoji Nishida ,  Yukiko Iwasaki

    IPC分类号： H01L2500

    CPC分类号： H01L31/042 ,  H01L31/0443 ,  H01L31/0504 ,  Y02E10/50

    摘要： A solar cell module comprises a plurality of unit cells connected in series, each of the unit cells comprising in this order an electrode, a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type. The electrode has a region not covered with the first semiconductor layer. The second semiconductor layer has a main region and a subregion which are separated by a groove. The main region of the second semiconductor layer in one unit cell is electrically connected to the region of the electrode not covered with the first semiconductor layer in another unit cell adjacent to the one unit cell. The region of the electrode not covered with the first semiconductor layer in the one unit cell is electrically connected to the subregion of the second semiconductor layer in the another unit cell. With this structure it is possible to simplify the formation of a bypass diode invention therefore provide solar cell module with high reliability at a low cost.

    摘要翻译： 太阳能电池模块包括串联连接的多个单元电池，每个单电池依次包括电极，具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层。 电极具有未被第一半导体层覆盖的区域。 第二半导体层具有由沟槽分隔开的主区域和子区域。 一个单元电池中的第二半导体层的主要区域与在一个单位电池相邻的另一单元电池中未被第一半导体层覆盖的电极的区域电连接。 在一个单元电池中没有被第一半导体层覆盖的电极的区域电连接到另一个晶胞中的第二半导体层的子区域。 利用这种结构，可以简化旁路二极管发明的形成，因此以低成本提供高可靠性的太阳能电池模块。