公开(公告)号：US07077901B2

公开(公告)日：2006-07-18

申请号：US10402214

申请日：2003-03-31

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida

IPC分类号： C30B19/02

CPC分类号： C30B19/12 ,  C30B19/02 ,  C30B29/06

摘要： A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

摘要翻译： 一种制造单晶硅晶片的方法，包括以下步骤：在单晶硅衬底上形成多孔层，该单晶硅衬底包含平均浓度为28％硅同位素的硅的浓度小于92.5％的硅; 将其质量数为28的硅同位素的质量数大于98％的起始硅溶解在用于液相外延的熔体中，直到所述起始硅在所述熔体中在还原气氛保持在高温下变为过饱和状态为止 温度：将所述单晶硅衬底浸入所述熔体中以在所述单晶硅衬底的所述多孔层的表面上生长单晶硅层; 以及从所述多孔层的一部分剥离所述单晶硅层。

公开(公告)号：US06391743B1

公开(公告)日：2002-05-21

申请号：US09401775

申请日：1999-09-22

申请人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

发明人： Masaaki Iwane ,  Takao Yonehara ,  Kazuaki Ohmi ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Kazutaka Yanagita

IPC分类号： H01L2130

CPC分类号： H01L31/072 ,  H01L21/67092 ,  H01L21/76254 ,  H01L2221/68363 ,  Y02E10/50

摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.

摘要翻译： 公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和 支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。 该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

公开(公告)号：US06190937B1

公开(公告)日：2001-02-20

申请号：US08999132

申请日：1997-12-29

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2176

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  H01L2221/68368 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔 （b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在 多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06756289B1

公开(公告)日：2004-06-29

申请号：US09638398

申请日：2000-08-15

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成 （b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层 在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06211038B1

公开(公告)日：2001-04-03

申请号：US09047325

申请日：1998-03-25

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

IPC分类号： H01L2176

CPC分类号： H01L21/76259

摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

摘要翻译： 制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含 通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。 励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。 从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。

公开(公告)号：US06602767B2

公开(公告)日：2003-08-05

申请号：US09769329

申请日：2001-01-26

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Takao Yonehara ,  Kiyofumi Sakaguchi

IPC分类号： H01L2120

CPC分类号： H01L21/02032 ,  H01L21/76259 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substrate and the porous layer, whereby at least part of the porous layer is cleaved from the crystalline silicon member and is transferred onto the supporting substrate. The crystalline silicon member can be recycled and this method is suitable for mass production of semiconductor devices or solar batteries at low cost.

摘要翻译： 用于转移多孔层的方法包括通过阳极氧化在晶体硅构件的一侧上形成多孔层，将支撑衬底固定在多孔层的表面上，并向支撑衬底和多孔层中的任何一个施加力， 由此多孔层的至少一部分从结晶硅构件上被切割并转移到支撑衬底上。 结晶硅元件可以循环利用，这种方法适合以低成本批量生产半导体器件或太阳能电池。

公开(公告)号：US06258698B1

公开(公告)日：2001-07-10

申请号：US09046600

申请日：1998-03-24

申请人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2130

CPC分类号： H01L21/2007

摘要： A process for producing a semiconductor substrate is provided which comprises a first step of anodizing a surface of a first substrate to form a porous layer on the surface, a second step of simultaneously forming a semiconductor layer on the surface of the porous layer and a semiconductor layer on a surface of the first substrate on its side opposite to the porous layer side, a third step of bonding the surface of the semiconductor layer formed on the surface of the porous layer to a surface of a second substrate, and a fourth step of separating the first substrate and the second substrate at the part of the porous layer to transfer to the second substrate the semiconductor layer formed on the surface of the porous layer, thereby providing the semiconductor layer on the surface of the second substrate. This makes it possible to produce semiconductor substrates at a low cost while making good use of expensive substrate materials.

摘要翻译： 提供了一种制造半导体衬底的方法，其包括：第一步骤，阳极氧化第一衬底的表面以在表面上形成多孔层;第二步骤，在多孔层的表面上同时形成半导体层，半导体 在与第一基板的与多孔层侧相反的一侧的表面上的第三步骤，将形成在多孔层的表面上的半导体层的表面接合到第二基板的表面上的第三步骤， 在所述多孔层的一部分处分离所述第一基板和所述第二基板，以将所述半导体层转移到所述第二基板，所述半导体层形成在所述多孔层的表面上，从而在所述第二基板的表面上提供所述半导体层。 这使得可以以低成本制造半导体衬底，同时充分利用昂贵的衬底材料。

公开(公告)号：US5492859A

公开(公告)日：1996-02-20

申请号：US369325

申请日：1995-01-06

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/977

摘要： A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

摘要翻译： 一种制造半导体器件基板的方法包括以下步骤：使第一基板部件多孔，在第二基板部件上形成绝缘层，在第二基板部件上的绝缘层上形成非晶层，将多孔第一基板部件接合到 在非晶层至少不结晶的气氛的温度下的非晶层，通过利用多孔第一基板构件作为晶体生长种子，引起非晶层的固相外延生长，以及在第一基板构件之后移除结合的第一基板构件 通过化学蚀刻完成外延生长。

公开(公告)号：US5103851A

公开(公告)日：1992-04-14

申请号：US623526

申请日：1990-12-07

申请人： Shoji Nishida ,  Takao Yonehara

发明人： Shoji Nishida ,  Takao Yonehara

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L27/142 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L21/0242 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar battery characterized in the following respects of having at least one semiconductor multilayer structure (A) having at least, an electrode (a.sub.1); a semiconductor crystal (a.sub.2) of a first conductivity type formed on the electrode (a.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (a.sub.3) and a semiconductor layer (a.sub.4) of a second conductivity type and a semiconductor layer (a.sub.5) of the first conductivity type which sequentially formed so as to cover the semiconductor crystal (a.sub.2) of the first conductivity type and at least one semiconductor multilayer structure (B) having at least: an electrode (b.sub.1); a semiconductor crystal (b.sub.2) of the second conductivity type formed on the electrode (b.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (b.sub.3) and a semiconductor layer (b.sub.4) of the first conductivity type and a semiconductor layer (b.sub.5) of the second conductivity type which are alternately arranged on the same insulative substrate. The semiconductor multilayer structure sections (A) and (B) are alternately electrically connected by high resistance semiconductor layers (C) formed so as to cover the semiconductor multilayer structure sections (A) and (B). The surfaces of the high resistance semiconductor layers (C) form light receiving surfaces.

摘要翻译： 一种太阳能电池，其特征在于具有至少一个至少具有电极（a1）的至少一个半导体多层结构（A） 形成在电极（a1）上的第一导电类型的半导体晶体（a2）; 以及由高电阻半导体层（a3）和第二导电类型的半导体层（a4）和第一导电类型的半导体层（a5）组成的至少一组层叠层，其顺序地形成为覆盖 具有第一导电类型的半导体晶体（a2）和至少一个至少具有电极（b1）的半导体多层结构（B） 形成在电极（b1）上的第二导电类型的半导体晶体（b2）; 以及由第一导电类型的高电阻半导体层（b3）和半导体层（b4）和第二导电类型的半导体层（b5）组成的层叠层的至少一组交替地布置在相同的绝缘体 基质。 半导体多层结构部（A）和（B）通过形成为覆盖半导体多层结构部（A）和（B）的高电阻半导体层（C）交替电连接。 高电阻半导体层（C）的表面形成光接收表面。

公开(公告)号：US06534336B1

公开(公告)日：2003-03-18

申请号：US09572940

申请日：2000-05-18

申请人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Masaaki Iwane ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2100

CPC分类号： H01L31/1892 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/184 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.

摘要翻译： 本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体 在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤 通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。 本发明还提供一种通过上述方法制造的光电转换装置。