-
公开(公告)号：US4428111A
公开(公告)日：1984-01-31
申请号：US327790
申请日：1981-12-07
申请人： Robert G. Swartz
发明人： Robert G. Swartz
IPC分类号： H01L29/73 , H01L21/331 , H01L29/732 , H01L21/203 , H01L21/302
CPC分类号： H01L29/66287 , H01L29/732 , Y10S438/978
摘要： A process for fabricating a high speed bipolar transistor is described wherein the collector, base and emitter layers are first grown using molecular beam epitaxy (MBE). A mesa etch is performed to isolate a base-emitter region, and a contact layer is grown using MBE over this isolated region to make contact with the thin base layer. The contact layer is selectively etched to expose the emitter layer, and metal is deposited to fabricate emitter, base and collector contacts.
摘要翻译： 描述了制造高速双极晶体管的工艺，其中首先使用分子束外延（MBE）生长集电极，基极和发射极层。 执行台面蚀刻以隔离基极 - 发射极区域，并且使用MBE在该隔离区域上生长接触层以与薄的基底层接触。 选择性地蚀刻接触层以暴露发射极层，并且沉积金属以制造发射极，基极和集电极触点。
-
公开(公告)号：US4359773A
公开(公告)日：1982-11-16
申请号：US166045
申请日：1980-07-07
申请人： Robert G. Swartz , Ping K. Tien , Bruce A. Wooley
发明人： Robert G. Swartz , Ping K. Tien , Bruce A. Wooley
CPC分类号： H01S5/0683 , H01S5/4031 , H04B10/032 , H01S5/02252 , H01S5/02284 , H01S5/0427 , H01S5/06213 , H01S5/06832
摘要： A plurality of semiconductor lasers (431-434) and a photodetector (120) are mounted on a silicon substrate (100) having an integrated circuit (101) fabricated therein. The integrated circuit includes a biasing circuit (405) for establishing a threshold current level that is dependent on the output of the photodetector and a modulator circuit (404) for providing a modulation current that is dependent on the digital values in an input signal. A semiconductor switch (406) selects only one of the plurality of semiconductor lasers for activation by the biasing and modulator circuits. The integrated circuit also includes a circuit (408) that operates the semiconductor switch so as to selectively activate a different one of the plurality of semiconductor lasers in response to either a predetermined output from said photodetector or in response to an external supervisory signal.
摘要翻译： 多个半导体激光器（431-434）和光电检测器（120）安装在其上制造有集成电路（101）的硅衬底（100）上。 集成电路包括用于建立取决于光电检测器的输出的阈值电流电平的偏置电路（405）和用于提供取决于输入信号中的数字值的调制电流的调制器电路（404）。 半导体开关（406）仅选择多个半导体激光器中的一个来激活偏置和调制电路。 集成电路还包括操作半导体开关的电路（408），以响应于来自所述光电检测器的预定输出或响应于外部监控信号来选择性地激活多个半导体激光器中的不同的半导体激光器。
-
公开(公告)号：US4789984A
公开(公告)日：1988-12-06
申请号：US109122
申请日：1987-10-16
申请人： Robert G. Swartz
发明人： Robert G. Swartz
CPC分类号： H04J3/047 , H04J3/0685
摘要： A high data rate multiplexer (MUX) architecture includes front-end and rear-end MUXs clocked at a system clock rate equal to one-half of the MUX output data rate. The front-end MUX selects inputs under control of select signals derived from multiple phases of a select clock. The select clock is derived from the system clock. The number of select signals is equal to the multiplexing factor of the MUX.
-
公开(公告)号：US4492852A
公开(公告)日：1985-01-08
申请号：US465800
申请日：1983-02-11
IPC分类号： H01L21/203 , C30B23/06 , H05B1/00 , H01L21/20
CPC分类号： C30B23/06
摘要： A substrate heating arrangement suitable for use in ultra-high vacuum MBE includes a filament responsive to a DC current for generating thermal energy, a metallic enclosure surrounding the filament and having an aperture at one end thereof, an intermediate semiconductor substrate parallel to and separated from a semiconductor growth substrate, and a substrate support mounted to the enclosure capable of holding the substrates in the prescribed relationship.The intermediate semiconductor substrate regulates the temperature on the surface of the semiconductor growth substrate to be less than or equal to a fixed temperature (approximately 1100.degree. C. for silicon) regardless of the DC current applied to the filament.
摘要翻译： 适用于超高真空MBE的衬底加热装置包括响应于用于产生热能的DC电流的灯丝，围绕灯丝的金属外壳，在其一端具有孔，中间半导体衬底平行于并分离 半导体生长衬底和安装到能够以规定关系保持衬底的外壳的衬底支撑件。 中间半导体衬底将半导体生长衬底的表面上的温度调节为小于或等于固定温度（对于硅为大约1100℃），而不管施加到灯丝的直流电流如何。
-
-
-
搜索结果
14 条记录 (耗时 0.014 秒)