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公开(公告)号：US06960804B1
公开(公告)日：2005-11-01
申请号：US10633034
申请日：2003-10-10
IPC分类号： H01L21/027 , H01L21/336 , H01L29/786 , H01L29/788
CPC分类号： H01L29/785 , H01L21/0276 , H01L29/42392 , H01L29/66795
摘要： A double-semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The gate is formed on the insulating layer and surrounds the top surface, bottom surface and the side surfaces of the fin in the channel region of the semiconductor device. Surrounding the fin with gate material results in an increased total channel width and more flexible device adjustment margins.
摘要翻译： 双半导体器件包括衬底，绝缘层，鳍和栅极。 绝缘层形成在基板上，并且鳍形成在绝缘层上。 翅片具有多个侧表面，顶表面和底表面。 栅极形成在绝缘层上并且围绕半导体器件的沟道区域中的鳍的顶表面，底表面和侧表面。 用门材料围绕翅片会导致总通道宽度增加和设备调整裕度更灵活。
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公开(公告)号：US06815268B1
公开(公告)日：2004-11-09
申请号：US10301732
申请日：2002-11-22
IPC分类号： H01L2100
CPC分类号： H01L29/785 , H01L29/66795
摘要： A method of forming a gate in a FinFET device includes forming a fin on an insulating layer, forming source/drain regions and forming a gate oxide on the fin. The method also includes depositing a gate material over the insulating layer and the fin, depositing a barrier layer over the gate material and depositing a bottom anti-reflective coating (BARC) layer over the barrier layer. The method further includes forming a gate mask over the BARC layer, etching the BARC layer, where the etching terminates on the barrier layer, and etching the gate material to form the gate.
摘要翻译： 在FinFET器件中形成栅极的方法包括在绝缘层上形成鳍片，形成源极/漏极区域并在鳍片上形成栅极氧化物。 该方法还包括在绝缘层和鳍上沉积栅极材料，在栅极材料上沉积阻挡层并在阻挡层上沉积底部抗反射涂层（BARC）层。 该方法还包括在BARC层上形成栅极掩模，蚀刻BARC层，其中蚀刻在阻挡层上终止，并蚀刻栅极材料以形成栅极。
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公开(公告)号：US07196372B1
公开(公告)日：2007-03-27
申请号：US10614177
申请日：2003-07-08
IPC分类号： H01L29/788
CPC分类号： H01L29/7887 , H01L21/28273 , H01L27/11568 , H01L29/785
摘要： A non-volatile memory device includes a substrate, an insulating layer, a fin, an oxide layer, spacers and one or more control gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The oxide layer is formed on the fin and acts as a tunnel oxide for the memory device. The spacers are formed adjacent the side surfaces of the fin and the control gates are formed adjacent the spacers. The spacers act as floating gate electrodes for the non-volatile memory device.
摘要翻译： 非易失性存储器件包括衬底，绝缘层，鳍，氧化物层，间隔物和一个或多个控制栅极。 绝缘层形成在基板上，并且鳍形成在绝缘层上。 氧化层形成在翅片上并用作存储器件的隧道氧化物。 间隔件邻近翅片的侧表面形成，并且控制栅极邻近间隔件形成。 间隔件用作非易失性存储器件的浮栅电极。
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公开(公告)号：US06787854B1
公开(公告)日：2004-09-07
申请号：US10385753
申请日：2003-03-12
申请人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Bin Yu
发明人： Chih-Yuh Yang , Shibly S. Ahmed , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Bin Yu
IPC分类号： H01L218238
CPC分类号： H01L29/7853 , H01L29/66818
摘要： A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon layer using a second etch procedure, and etching, following the second etch procedure, the silicon layer using a third etch procedure to form a T-shaped fin structure.
摘要翻译： 一种在绝缘体上硅（SOI）晶片上形成翅片结构的方法，包括在半导体衬底上形成的绝缘层上的硅层，包括使用第一蚀刻步骤蚀刻硅层，然后蚀刻第一 蚀刻步骤，使用第二蚀刻步骤的硅层，以及在第二蚀刻程序之后，使用第三蚀刻工艺蚀刻硅层以形成T形翅片结构。
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15.发明授权Method for forming fins in a FinFET device using sacrificial carbon layer 有权在使用牺牲碳层的FinFET器件中形成翅片的方法公开(公告)号：US06645797B1
公开(公告)日：2003-11-11
申请号：US10310926
申请日：2002-12-06
申请人： Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Chih-Yuh Yang , Bin Yu
发明人： Matthew S. Buynoski , Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Haihong Wang , Chih-Yuh Yang , Bin Yu
IPC分类号： H01L2184
CPC分类号： H01L29/785 , H01L29/66795
摘要： A method for forming a fin in a semiconductor device that includes a substrate, an insulating layer formed on the substrate, and a conductive layer formed on the insulating layer, includes forming a carbon layer over the conductive layer and forming a mask over the carbon layer. The method further includes etching the mask and carbon layer to form at least one structure, where the structure has a first width, reducing the width of the carbon layer in the at least one structure to a second width, depositing an oxide layer to surround the at least one structure, removing a portion of the oxide layer and the mask, removing the carbon layer to form an opening in a remaining portion of the oxide layer for each of the at least one structure, filling the at least one opening with conductive material, and removing the remaining portion of the oxide layer and a portion of the conductive layer to form the fin.
摘要翻译： 一种在半导体器件中形成翅片的方法，包括：衬底，形成在衬底上的绝缘层和形成在绝缘层上的导电层，包括在导电层上形成碳层，并在碳层上形成掩模 。 该方法还包括蚀刻掩模和碳层以形成至少一种结构，其中结构具有第一宽度，将至少一个结构中的碳层的宽度减小到第二宽度，沉积氧化物层以围绕 至少一个结构，去除所述氧化物层和所述掩模的一部分，除去所述碳层以在所述至少一个结构中的每一个结构的氧化物层的剩余部分中形成开口，用导电材料填充所述至少一个开口 并且去除氧化物层的剩余部分和导电层的一部分以形成翅片。
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公开(公告)号：US06864164B1
公开(公告)日：2005-03-08
申请号：US10320536
申请日：2002-12-17
IPC分类号： H01L21/336 , H01L29/786 , H01L21/3205
CPC分类号： H01L29/785 , H01L29/66545 , H01L29/66795
摘要： A method of forming a gate electrode for a fin field effect transistor (FinFET) includes forming a fin on a substrate and forming an oxide layer over the fin. The method further includes forming a carbon layer over the oxide layer and forming a trench in the oxide layer and the carbon layer, where the trench crosses over the fin. The method also includes filling the trench with a material to form the gate electrode.
摘要翻译： 形成鳍状场效应晶体管（FinFET）的栅电极的方法包括在衬底上形成翅片并在鳍上形成氧化物层。 所述方法还包括在所述氧化物层上形成碳层并在所述氧化物层和所述碳层中形成沟槽，其中所述沟槽跨过所述鳍片。 该方法还包括用材料填充沟槽以形成栅电极。
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公开(公告)号：US06787476B1
公开(公告)日：2004-09-07
申请号：US10632989
申请日：2003-08-04
IPC分类号： H01L21302
CPC分类号： H01L29/785 , H01L21/31116 , H01L21/31144 , H01L29/4908 , H01L29/66795
摘要： A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.
摘要翻译： 提供了一种形成Fin场效应晶体管（FinFET）的栅极的方法。 该方法包括在翅片上形成第一层材料，并在第一层上形成第二层。 第二层包括Ti或TiN。 该方法还包括在第二层上形成第三层。 第三层包括抗反射涂层。 该方法还包括蚀刻第一，第二和第三层以形成用于FinFET的栅极。
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公开(公告)号：US07915160B1
公开(公告)日：2011-03-29
申请号：US11625190
申请日：2007-01-19
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L29/66795 , H01L29/785 , H01L29/7856
摘要： Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
摘要翻译： 提供了用于形成用于半导体器件的触点的方法。 所述方法可以包括在半导体器件上沉积诸如多晶硅，氮化物，氧化物和/或碳材料的各种材料。 所述方法还可以包括形成接触孔并填充接触孔以形成用于半导体器件的接触。
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公开(公告)号：US07183223B1
公开(公告)日：2007-02-27
申请号：US10728909
申请日：2003-12-08
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L29/66795 , H01L29/785 , H01L29/7856
摘要： Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
摘要翻译： 提供了用于形成用于半导体器件的触点的方法。 所述方法可以包括在半导体器件上沉积诸如多晶硅，氮化物，氧化物和/或碳材料的各种材料。 所述方法还可以包括形成接触孔并填充接触孔以形成用于半导体器件的接触。
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公开(公告)号：US06835618B1
公开(公告)日：2004-12-28
申请号：US10633499
申请日：2003-08-05
IPC分类号： H01L218242
CPC分类号： H01L29/785 , H01L21/84 , H01L27/1203 , H01L29/1054 , H01L29/66795 , H01L29/78687
摘要： A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method further includes growing a second material in the trench to form the fin and removing the layer of first material.
摘要翻译： 形成鳍状场效应晶体管（FinFET）的鳍片的方法包括在第一材料层中限定沟槽，其中沟槽的开口的宽度基本上小于该层的厚度。 该方法还包括在沟槽中生长第二材料以形成翅片并去除第一材料层。
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