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公开(公告)号：US11640940B2
公开(公告)日：2023-05-02
申请号：US17314269
申请日：2021-05-07
发明人： Shu-Wei Li , Yu-Chen Chan , Shin-Yi Yang , Ming-Han Lee , Shau-Lin Shue
IPC分类号： H01L21/768 , H01L23/532
摘要： An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, and the conductive layer includes one or more graphene layers. The first portion of the conductive layer includes a first interface portion and a second interface portion opposite the first interface portion, and each of the first and second interface portion includes a metal disposed between adjacent graphene layers. The structure further includes a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and the second portion of the conductive layer includes a third interface portion and a fourth interface portion opposite the third interface portion. Each of the third and fourth interface portion includes the metal disposed between adjacent graphene layers. The structure further includes a dielectric material disposed between the first and second portions of the conductive layer.
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公开(公告)号：US11640935B2
公开(公告)日：2023-05-02
申请号：US17377395
申请日：2021-07-16
发明人： Chung-Ming Weng , Chen-Hua Yu , Chung-Shi Liu , Hao-Yi Tsai , Cheng-Chieh Hsieh , Hung-Yi Kuo , Tsung-Yuan Yu , Hua-Kuei Lin , Hsiu-Jen Lin , Ming-Che Ho , Yu-Hsiang Hu , Chewn-Pu Jou , Cheng-Tse Tang
IPC分类号： H01L29/22 , H01L23/498 , H01L21/768 , G02B6/42 , H01L23/00
摘要： A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.
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公开(公告)号：US11640928B2
公开(公告)日：2023-05-02
申请号：US17412423
申请日：2021-08-26
IPC分类号： H01L21/48 , H01L23/48 , H01L23/52 , H01L23/367 , H01L23/522 , H01L23/373
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.
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公开(公告)号：US20230128141A1
公开(公告)日：2023-04-27
申请号：US18088216
申请日：2022-12-23
摘要： Disclosed herein are related to an integrated circuit including a semiconductor layer. In one aspect, the semiconductor layer includes a first region, a second region, and a third region. The first region may include a circuit array, and the second region may include a set of interface circuits to operate the circuit array. A side of the first region may face a first side of the second region along a first direction. The third region may include a set of header circuits to provide power to the set of interface circuits through metal rails extending along a second direction. A side of the third region may face a second side of the second region along the second direction. In one aspect, the first side extending along the second direction is shorter than the second side extending along the first direction, and the metal rails are shorter than the first side.
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公开(公告)号：US20230127045A1
公开(公告)日：2023-04-27
申请号：US18068388
申请日：2022-12-19
发明人： Mao-Lin HUANG , Lung-Kun CHU , Chung-Wei HSU , Jia-Ni YU , Chun-Fu LU , Kuo-Cheng CHIANG , Kuan-Lun CHENG , Chih-Hao WANG
IPC分类号： H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/78
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a gate dielectric layer, a first conductive layer over the first conductive layer. The gate structure includes a fill layer over the first conductive layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a top surface of the gate dielectric layer is lower than a top surface of the protection layer and higher than a top surface of the first conductive layer.
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公开(公告)号：US11637240B2
公开(公告)日：2023-04-25
申请号：US16844875
申请日：2020-04-09
发明人： Hsing-Lien Lin , Fu-Ting Sung , Ching Ju Yang , Chii-Ming Wu
摘要： A semiconductor memory structure includes a memory cell, an encapsulation layer over a sidewall of the memory cell, and a nucleation layer between the sidewall of the memory cell and the encapsulation layer. The memory cell includes a top electrode, a bottom electrode and a data-storage element sandwiched between the bottom electrode and the top electrode. The nucleation layer includes metal oxide.
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公开(公告)号：US11635347B2
公开(公告)日：2023-04-25
申请号：US16595045
申请日：2019-10-07
发明人： Po Yao Li , Shao Chang Tu , Tsung-Ying Wu , Wei Chih Lin
IPC分类号： G01M13/04 , G01M13/045 , F16L3/16 , F16L3/02
摘要： A buffer for holding a pipe adapted to transport a fluid is provided. The buffer includes a base, a plurality of fingers extending outwardly from a first side of the base. A first finger of the plurality of fingers and a second finger of the plurality of fingers define a cavity for receiving the pipe. The buffer further includes at least one roller on a second side of the base opposite the first side.
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公开(公告)号：US20230124471A1
公开(公告)日：2023-04-20
申请号：US18083576
申请日：2022-12-19
IPC分类号： H01L29/423 , H01L29/78 , H01L29/66 , H01L21/28 , H01L21/8234
摘要： A semiconductor device includes a substrate, a plurality of insulators, a liner structure and a gate stack. The substrate has fins and trenches in between the fins. The insulators are disposed within the trenches of the substrate. The liner structure is disposed on the plurality of insulators and across the fins, wherein the liner structure comprises sidewall portions and a cap portion, the sidewall portions is covering sidewalls of the fins, the cap portion is covering a top surface of the fins and joined with the sidewall portions, and a maximum thickness T1 of the cap portion is greater than a thickness T2 of the sidewall portions. The gate stack is disposed on the liner structure and across the fins.
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公开(公告)号：US20230123987A1
公开(公告)日：2023-04-20
申请号：US17686074
申请日：2022-03-03
IPC分类号： H01L29/06 , H01L29/423 , H01L29/786 , H01L29/66 , H01L21/8234
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure includes a gate structure surrounding the first nanostructures, and an S/D structure adjacent to the gate structure. The semiconductor device structure also includes an inner spacer layer formed between the gate structure and the S/D structure, and a hard mask layer formed over the inner spacer layer. The hard mask layer is between the gate structure and the S/D structure, and is in direct contact with the inner spacer layer.
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公开(公告)号：US20230123907A1
公开(公告)日：2023-04-20
申请号：US18067733
申请日：2022-12-19
IPC分类号： H01L29/778 , H01L29/20 , H01L21/324 , H01L29/66 , H01L29/201
摘要： A semiconductor structure includes: a channel layer; an active layer over the channel layer, wherein the active layer is configured to form a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer; a gate electrode over a top surface of the active layer; and a source/drain electrode over the top surface of the active layer; wherein the active layer includes a first layer and a second layer sequentially disposed therein from the top surface to a bottom surface of the active layer, and the first layer possesses a higher aluminum (Al) atom concentration compared to the second layer. An HEMT structure and an associated method are also disclosed.
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