Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal
    11.
    发明申请
    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal 失效
    Mgb2单晶及其制备方法,含超导材料含有mgb2单晶

    公开(公告)号:US20030146417A1

    公开(公告)日:2003-08-07

    申请号:US10333827

    申请日:2003-01-23

    Abstract: The invention is intended to establish means for manufacturing MB2 single crystals and to provide a useful superconductive material (wire rod and so forth) taking advantage of anisotropic superconductive properties thereof. A mixed raw material of Mg and B or a precursor containing MgB2 crystallites, obtained by causing reaction of the mixed raw material of Mg and B, kept in contact with hexagonal boron nitride (hBN), is held at a high temperature in the range of 1300 to 1700null C. and under a high pressure in the range of 3 to 6 GPa to cause reaction for forming an intermediate product, thereby growing the MB2 single crystals having anisotropic superconductive properties via the intermediate product. The single crystals have features such that, depending on a direction in which a magnetic field is applied thereto, an irreversible magnetic field strength becomes equivalent to not less than 95% of a second magnetic field strength, so that adjustment of crystal orientation thereof results in production of a superconductive material excellent in property. Further, it is useful in effecting growth of the single crystals to cause a reducing agent such as Mg and so forth to coexist at the time of the reaction, or to provide a temperature gradient in melt occurring in the course of the reaction.

    Abstract translation: 本发明旨在建立用于制造MB2单晶的手段,并且利用其各向异性超导性能来提供有用的超导材料(线棒等)。 通过与保持与六方氮化硼(hBN)接触的Mg和B的混合原料的反应获得的Mg和B的混合原料或含有MgB 2微晶的前体在高温下保持在 1300至1700℃,在3至6GPa的高压下引起反应,形成中间产物,从而通过中间产物生长具有各向异性超导性的MB2单晶。 单晶具有这样的特征:根据施加磁场的方向,不可逆磁场强度等于不小于第二磁场强度的95%,从而导致晶体取向的调整 生产性能优异的超导材料。 此外,在进行单晶生长以使Mg等还原剂在反应时共存,或在反应过程中提供熔融温度梯度是有用的。

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