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    High abrasion low stress PDC
    6.
    发明授权
    High abrasion low stress PDC 有权
    高耐磨低应力PDC

    公开(公告)号：US09061264B2

    公开(公告)日：2015-06-23

    申请号：US13210681

    申请日：2011-08-16

    申请人： Robert H. Frushour

    发明人： Robert H. Frushour

    IPC分类号： B24D11/00 ,  B01J3/06

    CPC分类号： B01J3/062 ,  B01J2203/0605 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

    摘要： A polycrystalline diamond cutting element for use in rock drilling or other operations that requires very high abrasion resistance with high transverse rupture strength at temperatures above 700 degrees centigrade. The cutting element includes a diamond layer that contains pre-sintered polycrystalline diamond agglomerate (PPDA) bonded to a supporting substrate. The PPDA can be made thermally stable and can be selected to produce a cutting element with any desired abrasion resistance characteristic without affecting internal stress.

    摘要翻译： 用于岩石钻探或其他操作的多晶金刚石切割元件，其在高于700摄氏度的温度下需要非常高的耐磨性和高的横向断裂强度。 切割元件包括金刚石层，其包含结合到支撑基底的预烧结多晶金刚石附聚物（PPDA）。 PPDA可以制成热稳定的并且可以选择以产生具有任何期望的耐磨特性的切割元件而不影响内部应力。

    Diamond synthesis from silicon carbide
    7.
    发明授权
    Diamond synthesis from silicon carbide 失效
    钻石从碳化硅合成

    公开(公告)号：US5756061A

    公开(公告)日：1998-05-26

    申请号：US796932

    申请日：1991-11-25

    申请人： John L. White

    发明人： John L. White

    IPC分类号： B01J3/06 ,  C01B31/06

    CPC分类号： C01B31/06 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/068

    摘要： Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.

    摘要翻译： 在不存在另外非金刚石元素碳的情况下加热SiC并且在有选择地反应的反应物的存在下，通过在不存在另外的非金刚石的元素碳的情况下加热SiC，在低于通过将无定形碳或石墨转化为金刚石所需要的温度和/或压力下， 其中Si在加热SiC的温度下，以及当被冷却时易碎的基体，而Sic位于金刚石 - 石墨相图的金刚石稳定区域内，从而允许金刚石与物理层分离 手段。

    METHODS OF FORMING POLYCRYSTALLINE DIAMOND
    8.
    发明申请
    METHODS OF FORMING POLYCRYSTALLINE DIAMOND 审中-公开
    形成多晶金刚石的方法

    公开(公告)号：US20160052109A1

    公开(公告)日：2016-02-25

    申请号：US14929611

    申请日：2015-11-02

    申请人： Baker Hughes Incorporated

    发明人： Anthony A. DiGiovanni

    IPC分类号： B24D18/00 ,  E21B10/567 ,  B24D99/00

    CPC分类号： B01J3/062 ,  B01J2203/0605 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/0685 ,  B24D18/0009 ,  B24D99/00 ,  E21B10/54 ,  E21B10/56 ,  E21B10/567

    摘要： Methods of forming polycrystalline diamond include encapsulating diamond particles and a hydrocarbon substance in a canister, and subjecting the encapsulated diamond particles and hydrocarbon substance to a pressure and a temperature sufficient to form inter-granular bonds between the diamond particles. Cutting elements for use in an earth-boring tool includes a polycrystalline diamond material formed by such processes. Earth-boring tools include such cutting elements.

    摘要翻译： 形成多晶金刚石的方法包括将金刚石颗粒和烃物质包封在罐中，并且将包封的金刚石颗粒和烃物质经受足以在金刚石颗粒之间形成颗粒间结合的压力和温度。 用于钻孔工具的切割元件包括通过这种工艺形成的多晶金刚石材料。 钻孔工具包括这样的切割元件。

    HIGH ABRASION LOW STRESS PDC
    9.
    发明申请
    HIGH ABRASION LOW STRESS PDC 审中-公开
    高耐磨低应力PDC

    公开(公告)号：US20120291361A1

    公开(公告)日：2012-11-22

    申请号：US13210681

    申请日：2011-08-16

    申请人： Robert H. Frushour

    发明人： Robert H. Frushour

    IPC分类号： B24D3/10 ,  B01J3/06

    CPC分类号： B01J3/062 ,  B01J2203/0605 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685

    摘要： A polycrystalline diamond cutting element for use in rock drilling or other operations that requires very high abrasion resistance with high transverse rupture strength at temperatures above 700 degrees centigrade. The cutting element includes a diamond layer that contains pre-sintered polycrystalline diamond agglomerate (PPDA) bonded to a supporting substrate. The PPDA can be made thermally stable and can be selected to produce a cutting element with any desired abrasion resistance characteristic without affecting internal stress.

    摘要翻译： 用于岩石钻探或其他操作的多晶金刚石切割元件，其在高于700摄氏度的温度下需要非常高的耐磨性和高的横向断裂强度。 切割元件包括金刚石层，其包含结合到支撑基底的预烧结多晶金刚石附聚物（PPDA）。 PPDA可以制成热稳定的并且可以选择以产生具有任何期望的耐磨特性的切割元件而不影响内部应力。

    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal
    10.
    发明授权
    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal 失效
    Mgb2单晶及其制备方法，含超导材料含有mgb2单晶

    公开(公告)号：US06787504B2

    公开(公告)日：2004-09-07

    申请号：US10333827

    申请日：2003-01-23

    申请人： Lee Sergey Romonovich ,  Ayako Yamamoto ,  Setsuko Tajima

    发明人： Lee Sergey Romonovich ,  Ayako Yamamoto ,  Setsuko Tajima

    IPC分类号： H01L3924

    CPC分类号： C01B35/04 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0645 ,  B01J2203/068 ,  Y10T29/49014 ,  Y10T29/49117

    摘要： The invention is intended to establish means for manufacturing MB2 single crystals and to provide a useful superconductive material (wire rod and so forth) taking advantage of anisotropic superconductive properties thereof. A mixed raw material of Mg and B or a precursor containing MgB2 crystallites, obtained by causing reaction of the mixed raw material of Mg and B, kept in contact with hexagonal boron nitride (hBN), is held at a high temperature in the range of 1300 to 1700° C. and under a high pressure in the range of 3 to 6 GPa to cause reaction for forming an intermediate product, thereby growing the MB2 single crystals having anisotropic superconductive properties via the intermediate product. The single crystals have features such that, depending on a direction in which a magnetic field is applied thereto, an irreversible magnetic field strength becomes equivalent to not less than 95% of a second magnetic field strength, so that adjustment of crystal orientation thereof results in production of a superconductive material excellent in property. Further, it is useful in effecting growth of the single crystals to cause a reducing agent such as Mg and so forth to coexist at the time of the reaction, or to provide a temperature gradient in melt occurring in the course of the reaction.

    摘要翻译： 本发明旨在建立用于制造MB2单晶的手段，并且利用其各向异性超导性能提供有用的超导材料（线棒等）。 通过与保持与六方氮化硼（hBN）接触的Mg和B的混合原料的反应获得的Mg和B的混合原料或含有MgB 2微晶的前体在高温下保持在 1300至1700℃，在3至6GPa的高压下引起反应，形成中间产物，从而通过中间产物生长具有各向异性超导性的MB2单晶。 单晶具有这样的特征：根据施加磁场的方向，不可逆磁场强度等于不小于第二磁场强度的95％，从而导致晶体取向的调整 生产性能优异的超导材料。 此外，在进行单晶生长以使Mg等还原剂在反应时共存，或在反应过程中提供熔融温度梯度是有用的。