ELECTROABSORPTION MODULATORS WITH A WEAKLY GUIDED OPTICAL WAVEGUIDE MODE
    11.
    发明申请
    ELECTROABSORPTION MODULATORS WITH A WEAKLY GUIDED OPTICAL WAVEGUIDE MODE 审中-公开
    具有弱引导光波形模式的电子调制器

    公开(公告)号:US20100215308A1

    公开(公告)日:2010-08-26

    申请号:US12721318

    申请日:2010-03-10

    IPC分类号: G02F1/017 G02F1/025 G02F1/015

    摘要: An electroabsorption modulator comprises an absorption layer, at least one layer of p-doped semiconductor, and at least one layer of n-doped semiconductor, said absorption layer being provided between said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor, and said layers forming a ridge waveguide structure, wherein the thickness of said absorption layer is between 9 and 60 nm, the width of said absorption layer is between 4.5 and 12 microns, and the width of at least one of said at least one layer of p-doped semiconductor and said at least one layer of n-doped semiconductor is between 4.5 and 12 microns; whereby the width of said ridge waveguide structure is between 4.5 and 12 microns.

    摘要翻译: 电吸收调制器包括吸收层,至少一层p掺杂半导体层和至少一层n掺杂半导体层,所述吸收层设置在所述至少一层p掺杂半导体层和所述至少一层之间 n型掺杂半导体层,并且所述层形成脊波导结构,其中所述吸收层的厚度在9和60nm之间,所述吸收层的宽度在4.5和12微米之间,并且至少一个 所述至少一层p掺杂半导体和所述至少一个n掺杂半导体层在4.5和12微米之间; 由此所述脊形波导结构的宽度在4.5和12微米之间。

    OPTICAL GUIDED MODE SPATIAL SWITCHES AND THEIR FABRICATION
    12.
    发明申请
    OPTICAL GUIDED MODE SPATIAL SWITCHES AND THEIR FABRICATION 失效
    光导模式空间开关及其制造

    公开(公告)号:US20090263068A1

    公开(公告)日:2009-10-22

    申请号:US12400882

    申请日:2009-03-10

    申请人: Jamshid Nayyer

    发明人: Jamshid Nayyer

    IPC分类号: G02F1/295

    摘要: Optical guided mode fast 1×2 and 2×2 spatial switches are provided that can be used in multimedia communication networks. These switches require a relative refractive index change of only 0.0001˜0.0002 and can be realized using Lithium Niobate, Polymers, semiconductors, etc. Extinction ratios of these switches are made to be better than 45 dB, by introductions of a rear edge adjusted broken electrode and a blocker electrode into their architecture. Optical losses are less than 3 dB, and excellent switching characteristics are achieved by suppressing cross talk to ˜50 dB. The two output ports of the 1×2 (2×2) switch are made to be spatially perpendicular (in opposition) by introduction of air grooves, allowing for two-dimensional integration of unit switches into matrices. System applications of the switch are made flexible due to a discrete drive requirement for each optical input to the 2×2 switch.

    摘要翻译: 光导模式提供1x2和2x2空间开关,可用于多媒体通信网络。 这些开关需要仅0.0001〜0.0002的相对折射率变化,并且可以使用铌酸锂,聚合物,半导体等实现。通过引入后边缘调整的破碎电极使这些开关的消光比优于45dB 和阻塞电极进入其架构。 光损耗小于3dB,通过将串扰抑制在〜50dB来实现优异的开关特性。 1x2(2x2)开关的两个输出端口通过引入空气槽而在空间垂直(相反),允许将单元开关二维集成到矩阵中。 由于对2x2开关的每个光输入的离散驱动要求,开关的系统应用变得灵活。

    Wavelength converting element and method of manufacturing thereof
    14.
    发明申请
    Wavelength converting element and method of manufacturing thereof 失效
    波长转换元件及其制造方法

    公开(公告)号:US20050225838A1

    公开(公告)日:2005-10-13

    申请号:US11142253

    申请日:2005-06-02

    申请人: Isao Tsuruma

    发明人: Isao Tsuruma

    摘要: A wavelength converting element is provided in which a fundamental wave with respect to an optical crystal substrate and a peak of a vertical transverse mode of a second harmonic are made to coincide, the converting efficiency is good, and a beam shape which enables good joining to a lens or an optical fiber is obtained. Given that an angle formed by a surface of the optical crystal substrate and a C axis of the optical crystal substrate is θ, a period at which inverted domains are formed is p, and a distance from a distal end of a comb-shaped electrode for forming the inverted domain to a central position of a waveguide is G, in the ion implantation, a concentration peak of the ion implantation is formed at a distance of substantially (G·tan θ+p/4) from the surface of the optical crystal substrate.

    摘要翻译: 提供一种波长转换元件,其中使相对于光学晶体基板的基波和二次谐波的垂直横向模式的峰值一致,转换效率良好,并且能够良好地接合到 获得透镜或光纤。 假设由光学晶体基板的表面和光学晶体基板的C轴形成的角度为θ,则形成反转畴的周期为p,并且与梳状电极的远端的距离为 在波导的中心位置处形成反向域为G,在离子注入中离子注入的浓度峰值形成在与光学晶体表面​​基本上(G.tanθ+ p / 4)的距离处 基质。

    Ion exchange waveguides and methods of fabrication
    15.
    发明授权
    Ion exchange waveguides and methods of fabrication 失效
    离子交换波导和制造方法

    公开(公告)号:US06786967B1

    公开(公告)日:2004-09-07

    申请号:US09419347

    申请日:1999-10-15

    申请人: Lee J. Burrows

    发明人: Lee J. Burrows

    IPC分类号: C30B2502

    摘要: A method for fabricating ion exchange waveguides, such as lithium niobate or lithium tantalate waveguides in optical modulators and other optical waveguide devices, utilizes pressurized annealing to further diffuse and limit exchange of the ions and includes ion exchanging the crystalline substrate with a source of ions and annealing the substrate by pressurizing a gas atmosphere containing the lithium niobate or lithium tantalate substrate above normal atmospheric pressure, heating the substrate to a temperature ranging from about 150 degrees Celsius to about 1000 degrees Celsius, maintaining pressure and temperature to effect greater ion diffusion and limit exchange, and cooling the structure to an ambient temperature at an appropriate ramp down rate. In another aspect of the invention a powder of the same chemical composition as the crystalline substrate is introduced into the anneal process chamber to limit the crystalline substrate from outgassing alkaline earth metal oxide during the anneal period. In yet another aspect of the invention an anneal container is provided that allows for crystalline substrates to be annealed in the presence of powder without contaminating the substrate with the powder during the anneal process. Waveguides manufactured in accordance with the method exhibit superior drift performance.

    摘要翻译: 用于制造离子交换波导的方法,如光调制器和其他光波导器件中的铌酸锂或钽酸锂波导,利用加压退火来进一步扩散和限制离子的交换,并且包括使晶体衬底与离子源离子交换, 通过将含有铌酸锂或钽酸锂衬底的气体气氛加压到正常大气压下来对衬底进行退火,将衬底加热至约150摄氏度至约1000摄氏度的温度,保持压力和温度以实现更大的离子扩散和限制 交换,并以适当的降速率将结构冷却至环境温度。 在本发明的另一方面,将与结晶基底相同的化学组成的粉末引入退火处理室中,以在退火期间限制结晶底物从脱气碱土金属氧化物。 在本发明的另一方面,提供一种退火容器,其允许结晶基材在粉末存在下进行退火,而不会在退火过程中用粉末污染基材。 根据该方法制造的波导显示出优异的漂移性能。

    Semiconductor optical device
    16.
    发明申请
    Semiconductor optical device 失效
    半导体光学器件

    公开(公告)号:US20030194193A1

    公开(公告)日:2003-10-16

    申请号:US10411270

    申请日:2003-04-11

    发明人: Takeyoshi Masuda

    IPC分类号: G02B006/10

    摘要: A multilayer semiconductor portion is provided on a semiconductor substrate on side faces of a semiconductor portion. A second conductive type III-V compound semiconductor layer is provided on the semiconductor portion and the multilayer semiconductor portion. The multilayer semiconductor portion has first to fourth semiconductor layers sequentially arranged on the semiconductor substrate. The first semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the side face of the semiconductor portion and a principal surface of the semiconductor substrate. The second semiconductor layer is a second conductive type III-V group compound semiconductor layer extending along the first semiconductor layer. The third semiconductor layer is a first conductive type III-V compound semiconductor layer extending along the second semiconductor layer. The fourth semiconductor layer is a second conductive type III-V compound semiconductor layer provided on the third semiconductor layer.

    摘要翻译: 在半导体基板的半导体部分的侧面上设置有多层半导体部。 在半导体部分和多层半导体部分上设置第二导电型III-V化合物半导体层。 多层半导体部分具有顺序地布置在半导体衬底上的第一至第四半导体层。 第一半导体层是沿着半导体部分的侧面和半导体衬底的主表面延伸的第一导电III-V族化合物半导体层。 第二半导体层是沿着第一半导体层延伸的第二导电型III-V族化合物半导体层。 第三半导体层是沿第二半导体层延伸的第一导电型III-V族化合物半导体层。 第四半导体层是设置在第三半导体层上的第二导电型III-V族化合物半导体层。

    Highly linear electro-optic delay generator for all-optical pulse-position modulation
    17.
    发明授权
    Highly linear electro-optic delay generator for all-optical pulse-position modulation 失效
    用于全光脉冲位置调制的高度线性的电光延迟发生器

    公开(公告)号:US06600844B2

    公开(公告)日:2003-07-29

    申请号:US09896953

    申请日:2001-06-29

    IPC分类号: G02F1295

    摘要: An optical delay generator comprises a first waveguide made from electro-optically active material resonantly coupled to a second non-electro-optically active waveguide. The first waveguide contains a chirped distributed Bragg reflector structure which reflects optical signals at a specific wavelength at a specific reflection point within the structure. An electric field applied to the first waveguide changes the refractive index of the electro-optically active material and thus shifts the reflection point. Optical signals reflecting from the reflection point are resonantly coupled into the second waveguide, and are thus not affected by the electric field applied to the first waveguide. The controllable optical delay applied to the optical signals results from control over the reflection point and the round-trip travel time for an optical signal forward propagating in the first waveguide, being reflected at the reflection point, and backward propagating in the second waveguide.

    摘要翻译: 光学延迟发生器包括由电光活性材料制成的第一波导,其共振耦合到第二非电光活性波导。 第一波导包含啁啾分布布拉格反射器结构,其在结构内的特定反射点反射特定波长的光信号。 施加到第一波导的电场改变电光活性材料的折射率,从而使反射点移动。 从反射点反射的光信号共振地耦合到第二波导中,因此不受施加到第一波导的电场的影响。 对光信号施加的可控光学延迟来自对在第一波导中向前传播的光信号的反射点和往返行进时间的控制,在反射点处被反射,并且在第二波导中反向传播。

    Polarization controller
    19.
    发明授权
    Polarization controller 失效
    极化控制器

    公开(公告)号:US4898441A

    公开(公告)日:1990-02-06

    申请号:US188870

    申请日:1988-05-02

    申请人: Haruhito Shimizu

    发明人: Haruhito Shimizu

    IPC分类号: G02F1/01 G02F1/035

    摘要: A polarization controller comprises a plurality of devices connected in series to each other. Each device includes an optical channel waveguide which is common to the plurality of the devices, and an electrode positioned on the optical channel waveguide and two electrodes positioned on both sides of the optical channel waveguide. A retardation induced by electrooptic effect in each device is adjusted by voltages applied to the electrode and the two electrodes. The voltages are not kept increasing or decreasing, but changed periodically so that there is no limitation in an operating range for controlling a polarization of light which is propagated through the optical channel waveguide.

    Integrated optics device for optical polarization conversion
    20.
    发明授权
    Integrated optics device for optical polarization conversion 失效
    用于光学偏振转换的集成光学器件

    公开(公告)号:US4732444A

    公开(公告)日:1988-03-22

    申请号:US843265

    申请日:1986-03-24

    摘要: An integrated optics optical polarization conversion device comprising a guide structure formed by integrated optics in a flat substrate made from a uniaxial crystalline material having electro-optical properties in which two distinct modes may propagate. In accordance with the invention, the optical axis of the crystal of said substrate forms an angle with the plane of the substrate less than (.pi./2) radians. In one of the variants, said axis is parallel to the direction of propagation of the guided wave and the device comprises a single set of homogeneous electrodes.

    摘要翻译: 一种集成光学光学偏振转换装置,包括由具有电光特性的单轴结晶材料制成的平坦基板中的集成光学元件形成的引导结构,其中两个不同的模式可以传播。 根据本发明,所述衬底的晶体的光轴与衬底的平面形成小于(pi / 2)弧度的角度。 在一个变型中,所述轴平行于导波的传播方向,并且该装置包括单组均匀电极。