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    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability
    13.
    发明授权
    Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having an antiparallel free (APF) structure with improved magnetic stability 有权
    具有改进的磁稳定性的具有反平行自由（APF）结构的电流垂直平面（CPP）磁阻（MR）传感器

    公开(公告)号：US09047892B2

    公开(公告)日：2015-06-02

    申请号：US14062800

    申请日：2013-10-24

    申请人： HGST Netherlands B.V.

    发明人： Jeffrey R. Childress ,  John Creighton Read ,  Yang Li

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3912 ,  G11B5/3906 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A current-perpendicular-to-the-plane magnetoresistive sensor has an antiparallel free (APF) structure and soft side shields wherein the upper free layer (FL2) of the APF structure is magnetically coupled antiparallel to the top shield and a top shield seed layer via a nonmagnetic antiparallel coupling (APC) layer. In one embodiment the antiparallel coupling is through an antiferromagnetic-coupling (AFC) layer that provides a dominant antiferromagnetic indirect exchange coupling of FL2 to the top shield. In another embodiment the antiparallel coupling is by an APC layer that decouples FL2 and the top shield and causes the edge-induced magnetostatic coupling between FL2 and the seed layer to dominate. The degree of coupling is controlled by the composition and thickness of the nonmagnetic APC layer between FL2 and the seed layer, and by the thickness of the seed layer.

    摘要翻译： 电流垂直于平面的磁阻传感器具有反平行自由（APF）结构和软侧屏蔽，其中APF结构的上自由层（FL2）与顶部屏蔽反向耦合并且顶部屏蔽种子层 通过非磁性反平行耦合（APC）层。 在一个实施例中，反平行耦合通过反铁磁耦合（AFC）层，其提供FL2与顶部屏蔽的显性反铁磁间接交换耦合。 在另一个实施例中，反平行耦合是通过APC层去耦合FL2和顶部屏蔽，并导致FL2和种子层之间的边缘诱导静磁耦合主导。 耦合度由FL2和种子层之间的非磁性APC层的组成和厚度以及种子层的厚度来控制。

    CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTIVE READ SENSOR
    15.
    发明申请
    CURRENT-PERPENDICULAR-TO-PLANE MAGNETORESISTIVE READ SENSOR 有权
    电流 - 平面磁传感读取传感器

    公开(公告)号：US20140363699A1

    公开(公告)日：2014-12-11

    申请号：US14293199

    申请日：2014-06-02

    申请人： International Business Machines Corporation

    发明人： Giovanni Cherubini ,  Simeon Furrer ,  Jens Jelitto ,  Mark A. Lantz

    IPC分类号： G11B5/39

    CPC分类号： G11B5/39 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/3948 ,  G11B5/3958 ,  G11B2005/3996 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

    摘要： A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.

    摘要翻译： 电流垂直于平面的磁阻读取传感器包括沿堆叠方向延伸的层叠层，以及平行于层叠方向的边缘表面，其形成读取传感器的支承表面的至少一部分，该轴承表面被设计为 面对记录介质。 层叠层包括第一接触层，铁磁自由层，其磁取向根据所施加的磁场而变化，在第一接触层上方，铁磁层上方的非磁性层，非磁性层上方的铁磁自旋注入层， 磁性层和自旋注入层上方的第二接触层，使得电流可以沿平行于堆叠方向的电流垂直于平面的方向在第二接触层和第一接触层之间流动。 层叠层还包括沿着平行于支承表面并垂直于层叠方向的方向延伸的一系列结构。

    ANTIFERROMAGNETIC (AFM) GRAIN GROWTH CONTROLLED RANDOM TELEGRAPH NOISE (RTN) SUPPRESSED MAGNETIC HEAD
    17.
    发明申请
    ANTIFERROMAGNETIC (AFM) GRAIN GROWTH CONTROLLED RANDOM TELEGRAPH NOISE (RTN) SUPPRESSED MAGNETIC HEAD 有权
    抗微生物（AFM）颗粒生长控制随机电视噪声（RTN）抑制磁头

    公开(公告)号：US20140334032A1

    公开(公告)日：2014-11-13

    申请号：US13893252

    申请日：2013-05-13

    申请人： HGST Netherlands B.V

    发明人： Kouichi Nishioka ,  Koujiro Komagaki

    IPC分类号： G11B5/147

    CPC分类号： G01R33/093 ,  G11B5/127 ,  G11B5/3906 ,  G11B5/3929 ,  G11B5/732 ,  Y10T428/115

    摘要： In one embodiment, a magnetic read head includes an antiferromagnetic (AFM) layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, wherein the seed layer includes a laminated structure with an upper layer including Ru being positioned above one or more additional layers. In another embodiment, a magnetic read head includes an AFM layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, the seed layer including a laminated structure of Ta/Y/Ru, wherein Y is a layer having an element or an alloy. Other magnetic heads having a reduced amount of random telegraph noise (RTN) and methods of formation thereof are disclosed according to more embodiments.

    摘要翻译： 在一个实施例中，磁读头包括反铁磁（AFM）层，其包括具有L12有序相的MnIr合金，位于AFM层上方的被钉扎层和位于AFM层正下方的种子层，其中种子层包括 具有包括Ru的上层的层压结构位于一个或多个另外的层之上。 在另一个实施例中，磁读头包括AFM层，该AFM层包括具有L12有序相的MnIr合金，位于AFM层上方的被钉扎层，以及位于AFM层正下方的种子层，种子层包括 Ta / Y / Ru，其中Y是具有元素或合金的层。 根据更多实施例公开了具有减少的随机电报噪声量（RTN）的其它磁头及其形成方法。

    Magnetic head and magnetic recording system
    19.
    发明授权
    Magnetic head and magnetic recording system 失效
    磁头和磁记录系统

    公开(公告)号：US08625237B2

    公开(公告)日：2014-01-07

    申请号：US12272088

    申请日：2008-11-17

    申请人： Tomio Iwasaki

    发明人： Tomio Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  Y10T428/1114 ,  Y10T428/1143

    摘要： A magnetic reproduction head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive film formed between the lower and the upper magnetic shield layers, a refill film in an element height direction disposed in contact with a surface opposite a floating surface of the magnetoresistive film, and a refill film in a track width direction disposed on a side wall surface of the magnetoresistive film. The magnetoresistive film is a tunneling magnetoresistive film including a free layer, an insulating barrier layer, and a fixed layer. The insulating barrier layer is one of a magnesium oxide film, an aluminum oxide film, and a titanium oxide film which contains at least one of nitrogen and silicon.

    摘要翻译： 磁性再现头包括下磁屏蔽层，上磁屏蔽层，形成在下磁屏蔽层和上磁屏蔽层之间的磁阻膜，元件高度方向上的补充膜设置成与浮动表面相对的表面接触 磁阻膜和设置在磁阻膜的侧壁表面上的轨道宽度方向的补充膜。 磁阻膜是包括自由层，绝缘阻挡层和固定层的隧道磁阻膜。 绝缘阻挡层是包含氮和硅中的至少一种的氧化镁膜，氧化铝膜和氧化钛膜之一。