公开(公告)号：US07045957B2

公开(公告)日：2006-05-16

申请号：US10223378

申请日：2002-08-20

Applicant: Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

Inventor： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC: H01J40/06

CPC classification number: H01J43/08 ,  H01J1/34 ,  H01J40/06 ,  H01J2201/3421 ,  H01J2231/50021 ,  Y10T428/30

Abstract: In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

Abstract translation: 在本发明的多晶金刚石薄膜中，平均粒径为1.5μm以上，通过拉曼光谱法获得的拉曼光谱中，波数为1580cm -1以上的峰强度， SUP>相对于波数为1335cm -1附近的峰值强度具有0.2或更小的比率。 根据本发明的光电阴极和电子管包括多晶金刚石薄膜作为光吸收层。

公开(公告)号：US07002132B2

公开(公告)日：2006-02-21

申请号：US10704695

申请日：2003-11-12

Applicant: Yasuharu Negi ,  Yasuyuki Egawa ,  Toru Hirohata ,  Minoru Niigaki

Inventor： Yasuharu Negi ,  Yasuyuki Egawa ,  Toru Hirohata ,  Minoru Niigaki

IPC: H01J40/14

CPC classification number: H01J43/28 ,  H01J43/08

Abstract: The invention relates to a photocathode and the like having such structure for holding a photocathode plate on a light transparent member with good reliability and workability. In the photocathode, claw portions of a holding member fixed to the light transparent member is pressed against the lower surface of a supporting plate so that a photocathode plate is sandwiched between the light transparent member and the supporting plate. Thus, the supporting plate is pressed against the photocathode plate, so that the photocathode plate is pressed against the light transparent plate by the supporting plate. This allows the photocathode plate to be held reliably by the light transparent member. This simple configuration further provides good workability in assembling.

Abstract translation: 本发明涉及一种具有这样的结构的光电阴极等，该光电阴极等具有良好的可靠性和可加工性的将光电面板保持在透光构件上。 在光电阴极中，固定在透光构件上的保持构件的爪部被压靠在支撑板的下表面上，使得光电阴极板夹在透光构件和支撑板之间。 因此，支撑板被压在光电阴极板上，使得光电阴极板通过支撑板压靠在透光板上。 这允许光电阴极板被透光构件可靠地保持。 这种简单的配置进一步提供了良好的组装可操作性。

公开(公告)号：US06831341B2

公开(公告)日：2004-12-14

申请号：US10416703

申请日：2003-05-14

Applicant: Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

Inventor： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

IPC: H01J134

CPC classification number: H01J31/507 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J2231/50021

Abstract: Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

Abstract translation: 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子 光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。 这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此 得到具有高量子效率的太阳能型半导体光电阴极1。

公开(公告)号：US20040232403A1

公开(公告)日：2004-11-25

申请号：US10443564

申请日：2003-05-22

Inventor： Roger S. Sillmon ,  Arlynn W. Smith ,  Rudy G. Benz

IPC: H01L029/12 ,  H01L021/00

CPC classification number: H01J31/506 ,  H01J1/34 ,  H01J9/12 ,  H01J43/08

Abstract: A photocathode includes a first layer having a first energy band gap for providing absorption of light of wavelengths shorter than or equal to a first wavelength, a second layer having a second energy band gap for providing transmission of light of wavelengths longer than the first wavelength, and a third layer having a third energy band gap for providing absorption of light of wavelengths between the first wavelength and a second wavelength. The first wavelength is shorter than the second wavelength. The first, second and third layers are positioned in sequence between input and output sides of the photocathode.

Abstract translation: 光电阴极包括具有用于提供短于或等于第一波长的波长的光的吸收的第一能带隙的第一层，具有用于提供长于第一波长的波长的光的透射的第二能带隙的第二层， 以及具有用于提供第一波长和第二波长之间的波长的光的吸收的第三能带隙的第三层。 第一波长比第二波长短。 第一层，第二层和第三层依次位于光电阴极的输入和输出侧之间。

公开(公告)号：US06580215B2

公开(公告)日：2003-06-17

申请号：US09741826

申请日：2000-12-22

Applicant: Tokuaki Nihashi

Inventor： Tokuaki Nihashi

IPC: H01J4006

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423 ,  H01J2231/50021

Abstract: A photocathode having a UV glass substrate and a laminate composed of a SiO2 layer, a GaAlN layer, a Group III-V nitride semiconductor layer and an AlN buffer layer provided on the UV glass substrate in succession. The UV glass substrate, which absorbs infrared rays, can be heat treated at a high speed by photoheating. Further, the UV glass substrate, which is transparent to ultraviolet rays, permits ultraviolet rays to be introduced into the Group III-V nitride semiconductor layer where photoelectric conversion occurs.

Abstract translation: 具有UV玻璃基板和由UV玻璃基板上设置的SiO 2层，GaAlN层，III-V族氮化物半导体层和AlN缓冲层构成的层叠体的光电阴极。 吸收红外线的紫外线玻璃基板可以通过光热进行高速热处理。 此外，对紫外线透明的紫外线玻璃基板，能够在发生光电转换的III-V族氮化物半导体层中引入紫外线。

公开(公告)号：US5680007A

公开(公告)日：1997-10-21

申请号：US507985

申请日：1995-07-27

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

IPC: H01J1/34 ,  H01J43/08

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。 光电子在该电场加速度下获得能量，并且在电子发射层中被转变到更高能量级的导带，并且发射到真空中。

公开(公告)号：US2895068A

公开(公告)日：1959-07-14

申请号：US55258155

申请日：1955-12-12

Applicant: SIEMENS EDISON SWAN LTD

Inventor： SIDNEY RODDA

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2796547A

公开(公告)日：1957-06-18

申请号：US41316954

申请日：1954-03-01

Applicant: ITT

Inventor： SCOTT NEVIN

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2159529A

公开(公告)日：1939-05-23

申请号：US15999237

申请日：1937-08-19

Applicant: FIRM FERNSEH AKTIEN GES

Inventor： HANS-WOLFGANG LANGENWALTER ,  ERNST RUSKA

IPC: H01J29/02 ,  H01J43/08

CPC classification number: H01J43/08 ,  H01J29/023

公开(公告)号：US20240274421A1

公开(公告)日：2024-08-15

申请号：US18109388

申请日：2023-02-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuyuki EGAWA ,  Atsuhito FUKASAWA ,  Suenori KIMURA ,  Takayasu NAGASAWA ,  Shunsuke KOBAYASHI

IPC: H01J43/28 ,  H01J43/08

CPC classification number: H01J43/28 ,  H01J43/08

Abstract: An electron tube includes a photoelectric conversion unit, an electron detection unit configured to receive a photoelectrons from the photoelectric conversion unit, a gate electrode disposed between the photoelectric conversion unit and the electron detection unit, and a housing configured to accommodate the photoelectric conversion unit, the electron detection unit, and the gate electrode. The housing has a lid portion to which the photoelectric conversion unit is fixed and which constitutes one end side of the housing. The gate electrode includes a main body portion that control passage of the photoelectrons by applying a voltage, and a power supply part that supports the main body portion so as to be spaced apart from the photoelectric conversion unit and applies a voltage to the main body portion. The power supply part is held by the lid portion.