公开(公告)号：US20180337635A1

公开(公告)日：2018-11-22

申请号：US15635635

申请日：2017-06-28

Applicant: Beken Corporation

Inventor： Jiazhou Liu ,  Yunfeng Zhao ,  Dawei Guo

IPC: H03B5/30

CPC classification number: H03B5/30 ,  H03B5/32 ,  H03B2200/0008 ,  H03B2200/0012 ,  H03B2200/005 ,  H03B2200/0074 ,  H03B2200/008 ,  H03B2201/0275

Abstract: A method and a circuit for exciting a crystal oscillation circuit are disclosed herein. The crystal oscillation circuit comprising: charging, with a charging circuit, a voltage-controlled oscillator; providing, with the voltage-controlled oscillator, an exciting signal; blocking, with a direct current blocking capacitor, direct current from the voltage-controlled oscillator to the crystal oscillation circuit; and exciting, with the exciting signal, the crystal oscillation circuit. The circuit for exciting a crystal oscillation circuit, comprising: a charging circuit; a voltage-controlled oscillator coupled to the charging circuit and configured to provide an exciting signal to the crystal oscillation circuit; and a direct current blocking capacitor connected between the voltage-controlled oscillator and the crystal oscillation circuit and configured to block direct current from the voltage-controlled oscillator.

公开(公告)号：US09960734B2

公开(公告)日：2018-05-01

申请号：US14522534

申请日：2014-10-23

Applicant: The Trustees Of Columbia University In The City Of New York

Inventor： Changyao Chen ,  James Hone ,  Sunwoo Lee

IPC: H03B5/32 ,  H03B5/30 ,  H01L21/02 ,  H03H3/02 ,  H03H9/17 ,  H01L29/84 ,  H01L29/06 ,  H01L29/165 ,  H03H9/02 ,  H01L29/00 ,  G01J5/04 ,  G01J5/44 ,  H01L41/18

CPC classification number: H03B5/30 ,  G01J5/046 ,  G01J5/44 ,  H01L21/0262 ,  H01L29/00 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/84 ,  H01L41/18 ,  H03B2200/0022 ,  H03B2200/0048 ,  H03B2201/0266 ,  H03B2201/0275 ,  H03H3/02 ,  H03H9/02244 ,  H03H9/02433 ,  H03H9/17

Abstract: A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.

公开(公告)号：US20170025998A1

公开(公告)日：2017-01-26

申请号：US14522534

申请日：2014-10-23

Applicant: The Trustees Of Columbia University In The City Of New York

Inventor： Changyao Chen ,  James Hone ,  Sunwoo Lee

IPC: H03B5/30

CPC classification number: H03B5/30 ,  G01J5/046 ,  G01J5/44 ,  H01L21/0262 ,  H01L29/00 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/84 ,  H01L41/18 ,  H03B2200/0022 ,  H03B2200/0048 ,  H03B2201/0266 ,  H03B2201/0275 ,  H03H3/02 ,  H03H9/02244 ,  H03H9/02433 ,  H03H9/17

Abstract: A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.

Abstract translation: 纳米机电系统（NEMS）振荡器可以包括绝缘衬底，源电极和漏电极，金属局部栅电极和微米级的原子薄的石墨烯谐振器。 源电极和漏极可以设置在绝缘基板上。 金属本地栅电极可以设置在绝缘基板上。 石墨烯谐振器可以悬挂在金属局部栅电极上，并且在石墨烯谐振器和金属局部栅电极之间限定真空间隙。

公开(公告)号：US06674333B1

公开(公告)日：2004-01-06

申请号：US10271828

申请日：2002-10-15

Applicant: David S. Peckham ,  Arul M. Balasubramaniyan

Inventor： David S. Peckham ,  Arul M. Balasubramaniyan

IPC: H03B500

CPC classification number: H03J5/244 ,  H03B2201/0208 ,  H03B2201/0275

Abstract: Systems and methods are described for a band switchable voltage controlled oscillator. A method comprises: operating said voltage controlled oscillator in a first frequency band by switching a first capacitive circuit having a capacitance that varies with a tuning voltage; and operating said voltage controlled oscillator in a second frequency band by switching a second capacitive circuit having a capacitance that does not vary with the tuning voltage. An apparatus comprises: a switchable variable capacitance circuit; a switchable fixed capacitance circuit coupled to the switchable variable capacitance circuit; a controller for selectively switching said switchable fixed and variable capacitance circuits; a fixed tank capacitance circuit coupled to the switchable fixed capacitance circuit; a main tuning voltage variable capacitance circuit coupled to the fixed tank capacitance circuit; a tank inductance coupled to the main tuning voltage variable capacitance circuit; and an amplifier circuit coupled to the tank inductance.

Abstract translation: 对带式可切换压控振荡器描述了系统和方法。 一种方法包括：通过切换具有随调谐电压而变化的电容的第一电容电路来操作第一频带中的所述压控振荡器; 以及通过切换具有不随所述调谐电压而变化的电容的第二电容电路，在所述第二频带中操作所述压控振荡器。 一种装置包括：可切换可变电容电路; 耦合到所述可切换可变电容电路的可切换固定电容电路; 用于选择性地切换所述可切换固定和可变电容电路的控制器; 耦合到可切换固定电容电路的固定电容电容电路; 主调谐电压可变电容电路耦合到固定槽电容电路; 耦合到主调谐电压可变电容电路的谐振电感; 以及耦合到箱体电感的放大器电路。

公开(公告)号：US5418497A

公开(公告)日：1995-05-23

申请号：US270624

申请日：1994-07-05

Applicant: Frederick L. Martin

Inventor： Frederick L. Martin

IPC: H03B1/00 ,  H03B5/12

CPC classification number: H03B5/1231 ,  H03B5/1209 ,  H03B5/1225 ,  H03B5/1243 ,  H03B5/1296 ,  H03B2200/0062 ,  H03B2201/02 ,  H03B2201/0275

Abstract: BiCMOS technology is used in the design of a VCO (200) to improve low DC operation. The VCO (200) includes two coupled oscillator circuits (201,219) tuned to different fixed frequencies such that the oscillator resonant frequencies define the tuning range of the VCO (200). The oscillator circuits (201, 219) are coupled such that the frequency of oscillation of the VCO (200) is adjustable via variable resistors (206, 214) by manipulating the bias currents to the two oscillator circuits (201,219). A biasing circuit (208) along with variable resistors (206 and 214) provide the DC bias to the oscillator circuits (201 and 219). The biasing circuit (208) maintains the sum of the biasing currents to the oscillator circuits constant. The oscillator circuits (201, and 219) are interconnected utilizing an RF coupling circuit (211). The VCO (200) is capable of operating at voltages as low as 1.8 volts DC.

Abstract translation: BiCMOS技术用于VCO（200）的设计，以改善低直流操作。 VCO（200）包括调谐到不同固定频率的两个耦合振荡器电路（201,219），使得振荡器谐振频率定义VCO（200）的调谐范围。 振荡器电路（201,219）被耦合，使得VCO（200）的振荡频率可通过可变电阻器（206,214）调节到两个振荡器电路（201,219）的偏置电流来调节。 偏置电路（208）连同可变电阻器（206和214）将DC偏压提供给振荡器电路（201和219）。 偏置电路（208）将偏置电流的和保持恒定。 振荡器电路（201和219）利用RF耦合电路（211）互连。 VCO（200）能够在低至1.8伏DC的电压下工作。