SEMICONDUCTOR DEVICE
    12.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20170019092A1

    公开(公告)日:2017-01-19

    申请号:US15279606

    申请日:2016-09-29

    发明人: Masahiro TAOKA

    IPC分类号: H03K17/082 H03K3/011

    摘要: A signal indicating temperature of an IGBT chip, after input into an overheat detection terminal, is simultaneously input into a first comparator for protection operation and a second comparator for precaution. At a normal time when the chip temperature is low, a first transistor connected to an alarm signal output terminal via a resistor and a second transistor connected to the alarm signal output terminal via a Zener diode are turned off, and the alarm signal output terminal whose voltage is pulled up by an external pull-up circuit is set to high level voltage. When the second comparator detects a precaution condition, the second transistor is turned on, and the alarm signal output terminal is set to intermediate level voltage. When the first comparator detects chip overheat, the first transistor is turned on, and the alarm signal output terminal is set to low level voltage.

    摘要翻译: 指示在输入到过热检测端子之后,IGBT芯片的温度的信号被同时输入到用于保护操作的第一比较器和用于预防的第二比较器。 在芯片温度低的正常时间,经由电阻器连接到报警信号输出端子的第一晶体管和经由齐纳二极管连接到报警信号输出端子的第二晶体管被截止,并且报警信号输出端子 电压由外部上拉电路上拉,设定为高电平。 当第二比较器检测到预警条件时,第二晶体管导通,并且将报警信号输出端子设置为中间电平电压。 当第一比较器检测到芯片过热时,第一个晶体管导通,报警信号输出端子设置为低电平电压。

    SYSTEMS AND METHODS TO PROVIDE ENHANCED DIODE BYPASS PATHS
    13.
    发明申请
    SYSTEMS AND METHODS TO PROVIDE ENHANCED DIODE BYPASS PATHS 审中-公开
    提供增强型二极管旁路的系统和方法

    公开(公告)号:US20160372966A1

    公开(公告)日:2016-12-22

    申请号:US15243493

    申请日:2016-08-22

    申请人: Tigo Energy, Inc.

    IPC分类号: H02J7/35 H02J7/00 H01L31/02

    摘要: Systems and methods are herein disclosed for efficiently allowing current to bypass a group of solar cells having one or more malfunctioning or shaded solar cells without overwhelming a bypass diode. This can be done using a switch (e.g., a MOSFET) connected in parallel with the bypass diode. By turning the switch on and off, a majority of the bypass current can be routed through the switch, which is configured to handle larger currents than the bypass diode is designed for, leaving only a minority of the current to pass through the bypass diode.

    摘要翻译: 这里公开了用于有效地允许电流绕过具有一个或多个故障或阴影的太阳能电池的一组太阳能电池而不压倒旁路二极管的系统和方法。 这可以使用与旁路二极管并联连接的开关(例如,MOSFET)来完成。 通过打开和关闭开关,大部分旁路电流可以通过开关布线,开关配置为处理比旁路二极管设计的更大的电流,只剩下少量电流通过旁路二极管。

    Short Circuit Protection for a Power Switch
    14.
    发明申请
    Short Circuit Protection for a Power Switch 有权
    电源开关的短路保护

    公开(公告)号:US20160233663A1

    公开(公告)日:2016-08-11

    申请号:US14840504

    申请日:2015-08-31

    IPC分类号: H02H3/20

    摘要: A power providing circuit which is configured to provide a current at an output voltage to a load at an output of the power providing circuit is described. The power providing circuit comprises a power transistor which is configured to draw the current from a supply voltage, wherein a resistance of the power transistor is controlled using a control voltage which is applied to a control port of the power transistor. Furthermore, the power providing circuit comprises short circuit protection circuitry which is configured to couple the control port of the power transistor with a first port of the power transistor to put the power transistor in an off-state, subject to a drop of the output voltage.

    摘要翻译: 一种功率提供电路,其被配置为向功率提供电路的输出处的负载提供输出电压的电流。 功率提供电路包括功率晶体管,其被配置为从电源电压抽取电流,其中使用施加到功率晶体管的控制端口的控制电压来控制功率晶体管的电阻。 此外,功率提供电路包括短路保护电路,其被配置为将功率晶体管的控制端口与功率晶体管的第一端口耦合,以将功率晶体管置于截止状态,受到输出电压的下降 。

    Device for monitoring and protecting the power supply of electrical equipment and method for implementing said device
    15.
    发明授权
    Device for monitoring and protecting the power supply of electrical equipment and method for implementing said device 有权
    用于监视和保护电气设备的电源的装置和用于实现所述装置的方法

    公开(公告)号:US09401593B2

    公开(公告)日:2016-07-26

    申请号:US12695434

    申请日:2010-01-28

    申请人: Jacques Gascuel

    发明人: Jacques Gascuel

    摘要: A device for monitoring and protecting electrical equipment, placed in series on a power supply line between an electrical power source and the equipment, includes: at least one voltage regulator for regulating a power supply voltage of the equipment, at least one current limiter, coupled to the voltage regulator to reduce the power supply voltage of the equipment if a power supply current absorbed by the equipment exceeds an upper operating value, at least one crowbar short-circuit device, adapted to be activated when the input voltage exceeds a safety limit value, higher than the upper operating value, and to cause a fuse placed in series between the power source and the equipment, to blow, and calculating and storage elements adapted to generate a clock and to log a date of occurrence of a fault and the operating parameters of the power supply for the equipment in a non-volatile memory.

    摘要翻译: 一种用于监控和保护电气设备的装置,其串联布置在电源和设备之间的电源线上,包括:用于调节设备的电源电压的至少一个电压调节器,至少一个限流器 如果设备吸收的电源电流超过上限值,则至少一个撬棒短路装置,当输入电压超过安全限值时,该电压调节器可以减小设备的电源电压 ,高于上部工作值,并且使得在电源和设备之间串联布置的熔断器,以及适于产生时钟的计算和存储元件,并记录故障发生日期和操作 非易失性存储器中设备的电源参数。

    SWITCHING POWER SUPPLY CIRCUIT
    16.
    发明申请
    SWITCHING POWER SUPPLY CIRCUIT 有权
    切换电源电路

    公开(公告)号:US20160172967A1

    公开(公告)日:2016-06-16

    申请号:US14926239

    申请日:2015-10-29

    IPC分类号: H02M3/04

    摘要: According to an embodiment, a switching power supply circuit includes a comparison circuit and an operation control circuit. The comparison circuit operates intermittently in response to an operation control signal. The comparison circuit compares a feedback voltage based on the output voltage with a reference voltage to generate a comparison result signal representing a result of comparison. The operation control circuit generates the operation control signal based on the clock signal and the comparison result signal. The operation control circuit generates an operation control signal synchronous with the clock signal, if the comparison result signal is at the first level.

    摘要翻译: 根据实施例,开关电源电路包括比较电路和运算控制电路。 比较电路响应于操作控制信号间歇地工作。 比较电路将基于输出电压的反馈电压与参考电压进行比较,以产生表示比较结果的比较结果信号。 运算控制电路基于时钟信号和比较结果信号生成运算控制信号。 如果比较结果信号处于第一级,则操作控制电路产生与时钟信号同步的操作控制信号。

    POWER SEMICONDUCTOR CIRCUIT
    17.
    发明申请
    POWER SEMICONDUCTOR CIRCUIT 审中-公开
    功率半导体电路

    公开(公告)号:US20150123715A1

    公开(公告)日:2015-05-07

    申请号:US14535546

    申请日:2014-11-07

    IPC分类号: H02M1/08 H03K17/56 H03K3/011

    摘要: A power semiconductor circuit comprising a power semiconductor switch having a control terminal and a first and a second load current terminal, and comprising a drive circuit. The power semiconductor circuit further comprises at least one of three further elements:a temperature-dependent control terminal resistance element which is electrically connected between the drive circuit and the control terminal; and/or a temperature-dependent load current terminal resistance element which is electrically connected between the drive circuit and the second load current terminal; and/or a first current branch which electrically connects the control terminal is to the second load current terminal, wherein a temperature-dependent control load current terminal resistance element is electrically connected into the first current branch. In the event of heating of a power semiconductor switch, the invention reduces the switching losses of the power semiconductor switch.

    摘要翻译: 一种功率半导体电路,包括具有控制端子和第一和第二负载电流端子的功率半导体开关,并且包括驱动电路。 功率半导体电路还包括三个其它元件中的至少一个:电连接在驱动电路和控制端之间的温度依赖控制端电阻元件; 和/或电连接在驱动电路和第二负载电流端子之间的依赖于温度的负载电流端子电阻元件; 和/或将控制端子电连接的第一电流分支与第二负载电流端子连接,其中温度依赖控制负载电流端子电阻元件电连接到第一电流分支中。 在加热功率半导体开关的情况下,本发明降低了功率半导体开关的开关损耗。

    Semiconductor device with a current sampler and a start-up structure
    18.
    发明授权
    Semiconductor device with a current sampler and a start-up structure 有权
    具有电流采样器和启动结构的半导体器件

    公开(公告)号:US09007099B2

    公开(公告)日:2015-04-14

    申请号:US14227931

    申请日:2014-03-27

    IPC分类号: H03K3/00 G05F1/46 H03K17/082

    CPC分类号: G05F1/462 H03K17/082

    摘要: A semiconductor device with a current sampler and a start-up structure, comprises first, second and third high-voltage transistors, and a resistor, wherein: a drain terminal of the first transistor is respectively connected to a drain terminal of the second transistor, a drain terminal of the third transistor and one end of the resistor; a source terminal of the first transistor is grounded, and a gate terminal of the first transistor is connected to a gate terminal of the second transistor; the other end of the resistor is connected to a gate terminal of the third transistor; wherein the resistor is wound and formed in a common voltage withstand region of the first transistor, the second transistor and the third transistor, or in a voltage withstand region of the first transistor only, or in the voltage withstand region of the third transistor only.

    摘要翻译: 具有电流采样器和启动结构的半导体器件包括第一,第二和第三高压晶体管和电阻器,其中:第一晶体管的漏极端子分别连接到第二晶体管的漏极端子, 第三晶体管的漏极端子和电阻器的一端; 第一晶体管的源极端子接地,第一晶体管的栅极端子连接到第二晶体管的栅极端子; 电阻器的另一端连接到第三晶体管的栅极端子; 其中所述电阻器被卷绕并形成在所述第一晶体管,所述第二晶体管和所述第三晶体管的公共耐压区域中,或者仅在所述第一晶体管的耐压区域中,或者仅在所述第三晶体管的耐压区域中形成。

    SOLID-STATE SWITCHING DEVICE HAVING A HIGH-VOLTAGE SWITCHING TRANSISTOR AND A LOW-VOLTAGE DRIVER TRANSISTOR
    19.
    发明申请
    SOLID-STATE SWITCHING DEVICE HAVING A HIGH-VOLTAGE SWITCHING TRANSISTOR AND A LOW-VOLTAGE DRIVER TRANSISTOR 有权
    具有高电压开关晶体管和低电压驱动晶体管的固态开关器件

    公开(公告)号:US20150035586A1

    公开(公告)日:2015-02-05

    申请号:US13957864

    申请日:2013-08-02

    IPC分类号: H03K17/08

    摘要: According to an embodiment, a solid-state switching device includes a high-voltage switching transistor including a source, a drain and a gate, and being adapted for switching a high voltage on the basis of a switching signal, and a switching driver circuit operationally connected to the high-voltage switching transistor, the switching driver circuit including a low-voltage driver transistor including a source, a drain and a gate, connected in series to the high-voltage switching transistor and being adapted for transferring the switching signal to the high-voltage switching transistor, wherein the high-voltage switching transistor is arranged source-down on top of the drain of the low-voltage driver transistor.

    摘要翻译: 根据实施例,固态开关装置包括:包括源极,漏极和栅极的高压开关晶体管,并且适于基于开关信号切换高电压;以及开关驱动器电路, 连接到高压开关晶体管的开关驱动器电路包括串联连接到高电压开关晶体管的源极,漏极和栅极的低压驱动晶体管,并且适于将开关信号传送到 高压开关晶体管,其中高压开关晶体管被排列在低压驱动晶体管的漏极的顶部。

    SYSTEM AND METHOD FOR A DRIVER CIRCUIT
    20.
    发明申请
    SYSTEM AND METHOD FOR A DRIVER CIRCUIT 有权
    驱动电路的系统和方法

    公开(公告)号:US20140218097A1

    公开(公告)日:2014-08-07

    申请号:US13760676

    申请日:2013-02-06

    IPC分类号: H03K17/082

    摘要: In accordance with an embodiment, a method of operating a gate driving circuit includes monitoring a signal integrity at an output of the gate driving circuit. If the signal integrity is poor based on the monitoring, output of the gate driving circuit is placed in a high impedance state and an external signal integrity failure signal is asserted.

    摘要翻译: 根据实施例,操作栅极驱动电路的方法包括监视栅极驱动电路的输出处的信号完整性。 如果基于监视信号完整性差,则门驱动电路的输出置于高阻抗状态,并且断言外部信号完整性故障信号。