公开(公告)号：US08038973B2

公开(公告)日：2011-10-18

申请号：US12086041

申请日：2006-07-20

申请人： Nobuaki Ito ,  Kensuke Okazawa ,  Shinji Tokumaru ,  Masaki Okajima

发明人： Nobuaki Ito ,  Kensuke Okazawa ,  Shinji Tokumaru ,  Masaki Okajima

IPC分类号： C01B33/023 ,  B01J19/12

CPC分类号： C01B33/037

摘要： The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.

摘要翻译： 本发明提供了一种适用于廉价的冶金级金属硅作为材料的高纯度硅生产系统和生产方法，并且使用炉渣精炼方法生产出适合于太阳能电池应用的纯度为6N或更高的高纯度硅，特别是 硼含量至少为0.3质量ppm以下的高纯度硅，以工业规模廉价，即高纯硅生产系统和使用渣精炼方法的生产方法，其中直接电磁感应加热装置具有 通过电磁感应直接加热坩埚中的熔融硅的功能被布置在上述坩埚的外壁表面的外侧，坩埚至少在熔融硅与坩埚内壁表面接触的区域由抗氧化材料形成 没有为直接电磁感应加热装置供电的时间。

公开(公告)号：US20110182795A1

公开(公告)日：2011-07-28

申请号：US12918106

申请日：2009-02-19

申请人： Robert Lloyd

发明人： Robert Lloyd

IPC分类号： C01B33/023 ,  C01B33/02 ,  B01J19/00

CPC分类号： C01B33/025

摘要： A process for producing silicon comprising reacting silica with a reducing gas comprising carbon monoxide, wherein the reducing gas does not contain elemental carbon. A reactor for producing silicon comprising a carbon combustion chamber for reacting carbon with oxygen to generate a reducing gas comprising carbon monoxide, wherein the reducing gas contains no elemental carbon; a reaction chamber for reacting the reducing gas containing no elemental carbon with silica, the reaction chamber communicating with the carbon combustion chamber; a temperature controller for controlling the temperature of the reaction chamber; a silica inlet port communicating with the reaction chamber for admitting the silica to the reaction chamber; and a silicon outlet port communicating with the reaction chamber for allowing the silicon to leave the reaction chamber.

摘要翻译： 一种生产硅的方法，包括使二氧化硅与包含一氧化碳的还原气体反应，其中还原气体不含元素碳。 一种用于生产硅的反应器，包括碳燃烧室，用于使碳与氧反应以产生包含一氧化碳的还原气体，其中所述还原气体不含元素碳; 用于使不含元素碳的还原气体与二氧化硅反应的反应室，反应室与碳燃烧室连通; 温度控制器，用于控制反应室的温度; 二氧化硅入口与所述反应室连通以将所述二氧化硅引入所述反应室; 以及与反应室连通以使硅离开反应室的硅出口。

公开(公告)号：US20110176984A1

公开(公告)日：2011-07-21

申请号：US13041756

申请日：2011-03-07

申请人： Steven C. Amendola

发明人： Steven C. Amendola

IPC分类号： C01B33/025 ,  C01B33/113 ,  C01B33/12 ,  C01B31/36 ,  C01B33/039 ,  C01B33/023

CPC分类号： C01B33/025 ,  C01B33/023 ,  C01B33/039

摘要： A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.

摘要翻译： 一种在还原剂，优选碳质试剂存在下，在水溶液中预纯化的二氧化硅还原制备适用于光伏电池的高纯度硅的方法，其中预纯化的二氧化硅具有少量的硼 适用于光伏电池的描述。

公开(公告)号：US20110052475A1

公开(公告)日：2011-03-03

申请号：US12862925

申请日：2010-08-25

申请人： Mansoor Barati ,  Kingsley Kweku Larbi ,  Raja Roy ,  Vaikuntam I. Lakshmanan ,  Ramamritham Sridhar

发明人： Mansoor Barati ,  Kingsley Kweku Larbi ,  Raja Roy ,  Vaikuntam I. Lakshmanan ,  Ramamritham Sridhar

IPC分类号： C01B33/025 ,  C01B33/021 ,  C01B33/023

CPC分类号： C01B33/023 ,  C01B33/025 ,  C01P2006/80

摘要： A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si).

摘要翻译： 公开了一种从无定形二氧化硅生产硅的方法。 无定形二氧化硅由富含二氧化硅的材料形成，特别是稻壳灰或硅灰。 该方法包括使无定形二氧化硅用无机酸水溶液，特别是盐酸浸取。 优选地，将富含二氧化硅的材料在不高于850℃的温度下焙烧，进行浸出，然后在小于750℃的温度下进行第二次焙烧。该方法提供了生产高纯度硅 ，特别是生产太阳能级硅（SoG-Si）。

公开(公告)号：US20090053126A1

公开(公告)日：2009-02-26

申请号：US11931991

申请日：2007-10-31

申请人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

发明人： Eun Kyung LEE ,  Byoung Lyong CHOI ,  Dong Mock HWANG

IPC分类号： H01L21/20 ,  C01B33/023

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/033 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665

摘要： A method for the mass production of nanostructures is provided. The method comprises introducing metal catalyst nanoparticles into a plurality of uniformly sized pores of mesoporous templates, distributing the templates containing the metal catalyst nanoparticles in a three-dimensional manner, and introducing a nanowire source into the pores of the templates to grow the nanowire source into nanowires along the length of the pores. Further provided are nanostructures produced by the method. The nanostructures have a uniform thickness. In addition, the nanostructures may have various shapes and can be controllably doped. The nanostructures can be applied to a variety of devices, including electronic devices, e.g., field effect transistors (FETs) and light-emitting diodes (LEDs), photodetectors, nano-analyzers, and high-sensitivity signal detectors for various applications, e.g., cancer diagnosis.

摘要翻译： 提供了大量生产纳米结构的方法。 该方法包括将金属催化剂纳米颗粒引入中孔模板的多个均匀尺寸的孔中，以三维方式分布含有金属催化剂纳米颗粒的模板，并将纳米线源引入模板的孔中以将纳米线源生长成 沿着毛孔长度的纳米线。 还提供了通过该方法制备的纳米结构。 纳米结构具有均匀的厚度。 此外，纳米结构可以具有各种形状并且可以被可控地掺杂。 纳米结构可以应用于各种设备，包括电子设备，例如用于各种应用的场效应晶体管（FET）和发光二极管（LED），光电探测器，纳米分析仪和高灵敏度信号检测器， 癌症诊断。

公开(公告)号：US20080181836A1

公开(公告)日：2008-07-31

申请号：US11909353

申请日：2006-03-24

申请人： Eric Robert ,  Tjakko Zijlema

发明人： Eric Robert ,  Tjakko Zijlema

IPC分类号： C01B33/023

CPC分类号： H01L31/1804 ,  C01B33/033 ,  C01B33/037 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.

摘要翻译： 本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。 晶体硅太阳能电池。 通过使气态SiCU与液态Zn接触将SiCU转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。 然后在高于Zn沸点的温度下纯化含Si的合金。 该方法不需要复杂的技术，并且保留了SiCU对最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高的纯度等级获得并且连续再循环。

公开(公告)号：US5244639A

公开(公告)日：1993-09-14

申请号：US753005

申请日：1991-08-23

申请人： Fukuo Aratani ,  Tsuyoshi Fukutake

发明人： Fukuo Aratani ,  Tsuyoshi Fukutake

IPC分类号： C01B33/021 ,  C01B33/023 ,  C01B33/025

CPC分类号： C01B33/023 ,  C01B33/021 ,  C01B33/025

摘要： High-yield preparation of high-purity metallic silicon at is performed by subjecting a stream of oxides of silicon (e.g. in an aerosol) to reaction heat in the presence of a mixture of a material of the group including silicon carbide and silicon dioxide; and a material of the group including carbon and carbon-containing substance. Preferably, silicon oxide produced by the reaction is scavenged from exhaust gas leaving the reaction chamber, re-condensed, and returned to the reaction chamber.

摘要翻译： 高纯度金属硅的高产率制备方法是通过在含碳化硅和二氧化硅的基团的材料的混合物的存在下使硅（例如气溶胶）的氧化物流进行反应热; 和包含碳和含碳物质的组的材料。 优选地，通过反应产生的氧化硅从离开反应室的废气中被清除，再冷凝并返回到反应室。

公开(公告)号：US4997474A

公开(公告)日：1991-03-05

申请号：US428532

申请日：1989-10-30

申请人： Vishu D. Dosaj ,  James B. May ,  John D. Oleson

发明人： Vishu D. Dosaj ,  James B. May ,  John D. Oleson

IPC分类号： C01B33/023 ,  F27B3/14 ,  F27B14/00 ,  F27B14/08 ,  F27B14/14 ,  H05H1/26

CPC分类号： C01B33/023 ,  F27B14/14 ,  F27B3/14 ,  H05H1/26 ,  F27B2014/004 ,  F27B2014/0875

摘要： A silicon smelting furnace and a process for utilizing this furnace for the production of silicon is described. The process involves a process in which equilmolar proportions of silicon carbide and silicon dioxide are charged to the reaction zone of a silicon furnace. Above the furance is placed a shaft containing particulate carbon in the amount of 2 moles of carbon per mole of silicon dioxide charged to the reaction zone. As energy is applied to the reaction zone, molten silicon, gaseous silicon monoxide, and gaseous carbon monoxide are formed, the gases passing through the shaft of carbon, converting the carbon to silicon carbide. The silicon carbide, so formed, is combined with an equimolar proportion of silicon dioxide, and the cycle is repeated. Aside from an initial charge of silicon carbide, the feeds to the smelting furnace are silicon dioxide and carbon, silicon carbide being formed concurrently in a bed of carbon separated from the furnace reaction zone during the smelting cycle.

摘要翻译： 描述了硅熔炼炉和利用该炉来生产硅的方法。 该方法包括将平均比例的碳化硅和二氧化硅加入硅炉的反应区的方法。 在该容器之上放置一个含有颗粒碳的轴，每摩尔二氧化硅加入到反应区中2摩尔碳。 当能量施加到反应区时，形成熔融硅，气态一氧化硅和气态一氧化碳，气体通过碳的轴，将碳转化为碳化硅。 如此形成的碳化硅与等摩尔比例的二氧化硅组合，并重复该循环。 除了碳化硅的初始装料之外，熔炼炉的进料是二氧化硅和碳，在冶炼循环中与炉反应区分离的碳床同时形成碳化硅。

公开(公告)号：US4457903A

公开(公告)日：1984-07-03

申请号：US470981

申请日：1983-03-01

申请人： Josef Dietl ,  Claus Holm ,  Jorg Kotilge ,  Michael Wohlschlager

发明人： Josef Dietl ,  Claus Holm ,  Jorg Kotilge ,  Michael Wohlschlager

IPC分类号： C01B33/02 ,  C01B33/023

CPC分类号： C01B33/023

摘要： Pure silicon is obtained in a semicontinuous process by reducing quartz sand with aluminum in a slag medium based on alkaline earth metal silicates. The slag serves thereby simultaneously as a solvent for the aluminum oxide that forms and as an extraction medium for impurities that occur. The silicon formed separates out of the silicate slag and can be separated off. The aluminum oxide produced by the reduction can be separated from the slag and used for recovery of reusable aluminum.

摘要翻译： 通过在基于碱土金属硅酸盐的炉渣介质中还原铝的石英砂，在半连续工艺中获得纯硅。 渣因此同时作为形成的氧化铝的溶剂和用作发生的杂质的萃取介质。 形成的硅分离出硅酸盐渣，可以分离出来。 通过还原产生的氧化铝可以与渣分离并用于回收可重复使用的铝。

公开(公告)号：US11757126B2

公开(公告)日：2023-09-12

申请号：US17382544

申请日：2021-07-22

申请人： LG ENERGY SOLUTION, LTD.

发明人： Jung Hyun Choi ,  Yong Ju Lee ,  Eun Kyung Kim

IPC分类号： H01M10/0525 ,  H01M4/38 ,  H01M4/583 ,  H01M4/134 ,  H01M4/131 ,  H01M4/36 ,  H01M4/62 ,  H01M4/505 ,  H01M4/525 ,  H01M4/02 ,  C01B33/023

CPC分类号： H01M10/0525 ,  H01M4/131 ,  H01M4/134 ,  H01M4/364 ,  H01M4/366 ,  H01M4/386 ,  H01M4/505 ,  H01M4/525 ,  H01M4/583 ,  H01M4/625 ,  C01B33/023 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028

摘要： The present invention relates to a negative electrode active material which includes a secondary particle including a first particle which is a primary particle, wherein the first particle includes a first core and a first surface layer which is disposed on a surface of the first core and contains carbon, and the first core includes a metal compound which includes one or more of a metal oxide and a metal silicate and one or more of silicon and a silicon compound; a method of preparing the same; an electrode including the same; and a lithium secondary battery including the same.