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11.发明授权
公开(公告)号：US4936947A
公开(公告)日：1990-06-26
申请号：US359506
申请日：1989-06-01
申请人： Brian H. Mackintosh
发明人： Brian H. Mackintosh
CPC分类号： C30B15/34 , C30B15/00 , C30B15/28 , C30B29/66 , Y10S423/05 , Y10T117/1008 , Y10T117/104
摘要： A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor for measuring the weight of the crystal, a length sensor for measuring the length of the crystal, a pressure sensor for measuring the pressure inside the crystal, and a controller coupled to the weight, length and pressure sensors for controlling the operation of the crystal growing apparatus. The controller is coupled to the die heater of the apparatus for controlling the temperature of melt contained in the crucible of the apparatus based on the outputs of the weight, length and pressure sensors. To ensure the wall of the tubular crystalline body is maintained at a substantially uniform thickness, precise measurement of the weight of the body must be made. Compensation is provided by this invention for weight measurement errors that are created by pressure fluctations within the tubular crystalline body.
摘要翻译： 一种用于控制用于生长管状结晶体的装置的操作的控制系统。 控制系统包括用于测量晶体重量的重量传感器，用于测量晶体长度的长度传感器，用于测量晶体内部的压力的压力传感器，以及耦合到重量，长度和压力传感器的控制器，用于 控制晶体生长装置的操作。 控制器耦合到设备的模具加热器，用于基于重量，长度和压力传感器的输出来控制装置坩埚中容纳的熔体的温度。 为了确保管状结晶体的壁保持基本上均匀的厚度，必须精确地测量身体的重量。 由本发明为由管状结晶体内的压力波动产生的重量测量误差提供补偿。
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12.发明授权Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature 失效通过测量晶体重量和晶体 - 熔体界面温度来控制Czochralski晶体生长直径的方法和装置
公开(公告)号：US4565598A
公开(公告)日：1986-01-21
申请号：US527516
申请日：1983-08-11
申请人： Robert S. Seymour
发明人： Robert S. Seymour
CPC分类号： C30B15/28 , Y10T117/1008
摘要： Diameter control in an apparatus and method for growing crystals using the Czochralski technique is accomplished by progressively measuring both the temperature of the melt by a heat sensor and the weight of the residue of the melt in the crucible by a suitable weighing device. The weight measurement data is fed to microprocessor having a control algorithm. The microprocessor output and temperature measurement output are fed to a three-term temperature controller which regulates the temperature of the melt to thereby control automatically the diameter of the crystal. The relationship between an error in weight and the amount of temperature regulation is varied in accordance with a desired weight.
摘要翻译： PCT No.PCT / AU82 / 00216 Sec。 371日期1983年8月11日 102（e）日期1983年8月11日PCT申请日1982年12月22日PCT公布。 出版物WO83 / 02464 日期1987年7月21日。使用切克劳斯基技术生长晶体的装置和方法中的直径控制是通过逐渐测量熔体的热传感器的温度和坩埚中的熔体的残余物的重量来实现的 合适的称重装置。 重量测量数据被馈送到具有控制算法的微处理器。 微处理器输出和温度测量输出被馈送到三项温度控制器，其调节熔体的温度，从而自动控制晶体的直径。 重量误差和温度调节量之间的关系根据所需重量而变化。
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公开(公告)号：US4397813A
公开(公告)日：1983-08-09
申请号：US336708
申请日：1982-01-04
IPC分类号： C30B15/28 , C30B27/02 , C30B29/40 , H01L21/208
CPC分类号： C30B15/28 , C30B27/02 , Y10T117/1008 , Y10T117/1068 , Y10T117/1072
摘要： The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit. At the same time, the heating control circuit generates a heating control signal to a heating device in response to a program signal which is generated from a program signal generator. In response to the output signal from the heating device, a heater which controls the temperature of the melt held in a vessel and which is arranged outside the vessel is heated according to the program.
摘要翻译： 本发明提供一种用于制造单晶的方法和装置，其中通过重量检测器测量单晶拉伸的重量。 将测量的权重与从参考权重信号发生器产生的参考权重信号进行比较。 表示这两个信号之间的差的重量偏差信号由重量偏差检测器产生。 权重偏差信号由第一微分电路区分，并且通过由浮力校正信号发生器产生的信号来校正获得的微分输出信号以补偿液体密封剂的浮力。 由此获得的校正信号由第二微分电路区分，然后加到校正信号上。 相加结果由相位补偿电路进行相位补偿。 相位补偿信号被提供给加热控制电路。 同时，加热控制电路响应于从节目信号发生器产生的节目信号，向加热装置产生加热控制信号。 响应于来自加热装置的输出信号，根据程序加热控制容器中保持的熔体的温度并设置在容器外部的加热器。
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公开(公告)号：US4008387A
公开(公告)日：1977-02-15
申请号：US563441
申请日：1975-03-31
CPC分类号： C30B15/22 , Y10T117/1008
摘要： The Czochralski growth of a crystal may be automatically controlled to provide uniform crystal cross-sectional area by weighing the crucible containing the melt from which the crystal is grown and deriving a weight signal which is compared with its expected value to produce a feedback loop control signal to control the melt heater power. However a magnetic field will be associated with the melt heater current and the interaction of this field on the crucible can produce a levitation force which is recorded erroneously as part of the weight signal. This unwanted force can make the closed-loop control unstable. The error component in the weight signal is cancelled in the invention by deriving an equal and opposite component by monitoring the current supplied to the melt heater and adding the derived component to the weight signal in the feedback loop.
摘要翻译： 可以通过称量含有晶体生长的熔体的坩埚并得到与其期望值进行比较的重量信号，来自动控制晶体的切克劳斯基生长以提供均匀的晶体截面面积，以产生反馈回路控制信号 来控制熔体加热器的功率。 然而，磁场将与熔体加热器电流相关联，并且该坩埚上的该场的相互作用可产生悬浮力，其被错误地记录为重量信号的一部分。 这种不必要的力会导致闭环控制不稳定。 在本发明中，通过监测提供给熔体加热器的电流并将导出的分量加到反馈回路中的重量信号，得出相等且相反的分量，来消除重量信号中的误差分量。
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公开(公告)号：US3822111A
公开(公告)日：1974-07-02
申请号：US32775973
申请日：1973-01-29
申请人： SONY CORP
CPC分类号： C30B15/28 , Y10T117/1008 , Y10T117/106 , Y10T117/1064 , Y10T117/1072
摘要： Apparatus for controlling the diameter of a crystal pulled from a semiconductor melt in a crucible including a float which has a shape substantially similar to the crystal and which is pulled from a liquid filled tub in synchronism with the pulling up of the crystal, and an electronic circuit for comparing the weight of the float with the weight of the crystal during the pull up operation. The rate at which the crystal is pulled up and the temperature of the crucible are controlled as a function of the relative weights of the float and the crystal as they are being pulled up.
摘要翻译： 用于控制在包括浮子的坩埚中从半导体熔体拉出的晶体的直径的装置，该浮子具有与晶体大致相似的形状，并且与晶体的提升同步地从充满液体的桶中拉出;以及电子 电路，用于在上拉操作期间将浮子的重量与晶体的重量进行比较。 晶体被拉起的速率和坩埚的温度被控制为随着浮子和晶体被拉起的相对重量的函数。
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16.发明授权Apparatus for pulling rod-shaped crystals of semiconductor material from a melt in acrucible 失效用于从可熔融的熔体中拉出半导体材料的棒状晶体的装置
公开(公告)号：US3259467A
公开(公告)日：1966-07-05
申请号：US32765963
申请日：1963-12-03
申请人： SIEMENS AG
发明人： THEODOR RUMMEL
IPC分类号： C30B15/28
CPC分类号： C30B15/28 , Y10T117/1008 , Y10T117/1032
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公开(公告)号：US20230366123A1
公开(公告)日：2023-11-16
申请号：US18025969
申请日：2021-09-03
发明人： Young Jun LEE , Kyung Seok LEE , Jin Sung PARK
摘要： Disclosed is a continuous ingot growing apparatus. The continuous ingot growing apparatus according to the present invention may include a growth furnace in which a main crucible is positioned, wherein the main crucible accommodates molten-state silicon to grow an ingot, a material supply unit which supplies a solid-state silicon material before being melted into molten-state silicon, a quantitative supply unit which measures an amount of the solid-state silicon material supplied from the material supply unit and supplies a predetermined amount of the solid-state silicon material, and a preliminary melting unit which melts the predetermined amount of the solid-state silicon material supplied from the quantitative supply unit and supplies molten-state silicon to the main crucible. Since the solid silicon material such as polysilicon is supplied to the main crucible in a state in which the solid silicon material is completely melted outside the main crucible in which the ingot is grown, there is no need to form a partition in the main crucible, and thus the size of the main crucible may be reduced to reduce the manufacturing costs of the apparatus. In addition, since the main crucible is formed as one region, there is an effect of improving the ease of temperature control in the main crucible.
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公开(公告)号：US10113247B2
公开(公告)日：2018-10-30
申请号：US15507851
申请日：2015-09-09
发明人： Naoki Masuda , Masahiko Urano
摘要： A single crystal pulling apparatus including: a remelting detection apparatus which detects that remelting of a lower end portion of the semiconductor single crystal is completed from a change in weight of the semiconductor single crystal when the lower end portion of the semiconductor single crystal is immersed in the melt to be remolten by using the wire; and a lowermost end detection apparatus which detects a lowermost end of the semiconductor single crystal from a position where no current flows between the semiconductor single crystal and the melt when the semiconductor single crystal is taken up with the use of the wire while applying a voltage between the semiconductor single crystal and the melt by applying a voltage between the crucible and the wire.
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公开(公告)号：US09657407B2
公开(公告)日：2017-05-23
申请号：US14522640
申请日：2014-10-24
发明人： Mark S. Andreaco , James L. Corbeil , Brant Quinton , Troy Marlar , Ronald Nutt
CPC分类号： C30B15/00 , C30B13/285 , C30B15/28 , C30B15/30 , C30B15/32 , C30B29/34 , C30B35/00 , Y10T117/1004
摘要： A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.
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公开(公告)号：US08968468B2
公开(公告)日：2015-03-03
申请号：US12732492
申请日：2010-03-26
申请人： Ken Hamada
发明人： Ken Hamada
CPC分类号： C30B15/26 , C30B15/28 , Y10T117/1004 , Y10T117/1012
摘要： When pulling and growing a single crystal from a raw material melt by the Czochralski method, a boundary between the single crystal and the raw material melt is imaged by an optical sensor, and also the weight of the single crystal is measured by a weight sensor, a diameter value of the single crystal is calculated on the basis of first measured values of the diameter of the single crystal derived from image data captured by the optical sensor and second measured values of the diameter of the single crystal derived from weight data captured by the weight sensor, and a pulling rate of the single crystal and the temperature of the raw material melt are adjusted on the basis of the calculated diameter value to thereby control the diameter of the single crystal, and thus it is possible to accurately measure the diameter of a growing single crystal.
摘要翻译： 当通过Czochralski法从原料熔体中拉出和生长单晶时，通过光学传感器对单晶和原料熔体之间的边界进行成像，并且通过重量传感器测量单晶的重量， 基于由光学传感器捕获的图像数据导出的单晶直径的第一测量值和从由该光学传感器捕获的重量数据导出的单晶直径的第二测量值，计算单晶的直径值 基于计算出的直径值来调节单体的重量传感器和单晶的拉出速度和原料熔融温度，从而控制单晶的直径，从而可以精确地测量单晶的直径 增长单晶。
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