公开(公告)号：US5541416A

公开(公告)日：1996-07-30

申请号：US285533

申请日：1994-08-04

申请人： Syoichi Washizuka

发明人： Syoichi Washizuka

IPC分类号： H01L21/66 ,  G01N21/95 ,  G01R31/26 ,  H01S5/00 ,  G01N21/64

CPC分类号： G01N21/6489 ,  G01N21/9501 ,  G01R31/2635

摘要： A luminous efficiency is estimated by obtaining a life time a of few carriers controlling the luminous efficiency. An estimation method inadiates pulsed laser light for exciting carriers in a light emitting layer by a co-focal point optical system, at a specified position of the light emitting layer of a light emitting element formed on a surface of a wafer. A life time is obtained by detecting the fluorescent light emitted from the specified position in the light emitting layer corresponding to an irradiation of the pulsed laser light and by observing a change of the fluorescent light with lapse of a time. A luminous efficiency is estimated at the specified position in the light emitting layer from the life time on the basis of a correlation of a life time and a luminous efficiency previously obtained, thereby enabling an estimation of the light emitting element at a wafer stage without destroying the wafer and without contact therewith.

摘要翻译： 通过获得控制发光效率的少量载体的寿命a来估计发光效率。 在晶片表面形成的发光元件的发光层的规定位置处，通过共焦点光学系统照射用于激发发光层中的载流子的脉冲激光的估计方法。 通过检测从与脉冲激光的照射相对应的发光层中的指定位置发射的荧光，并且通过观察荧光随时间的变化来获得寿命。 基于寿命和先前获得的发光效率的相关性，从寿命估计在发光层的指定位置的发光效率，从而能够在晶片台处估计发光元件而不破坏 晶片并且不与其接触。

公开(公告)号：US5030315A

公开(公告)日：1991-07-09

申请号：US908985

申请日：1986-09-18

申请人： Syoichi Washizuka ,  Kazutaka Terashima ,  Johji Nishio ,  Masayuki Watanabe

发明人： Syoichi Washizuka ,  Kazutaka Terashima ,  Johji Nishio ,  Masayuki Watanabe

IPC分类号： C30B29/42 ,  C30B15/02 ,  C30B27/02 ,  H01L21/18 ,  H01L21/208

CPC分类号： C30B15/02

摘要： A method of manufacturing compound semiconductor crystals, comprising the steps of, providing a compound semiconductor melt in a crucible, said melt having a composition ratio which deviates from stoichiometry, pulling a compound semiconductor crystal from said crucible by using a seed crystal, and during the pulling step, adding to the melt a constitutional element of said compound semiconductor melt which is present in less than a stoichiometric amount, the element being added in a quantity sufficient to maintain said composition ratio of the first step. An apparatus for manufacturing compound semiconductor crystals is also provided.

摘要翻译： 一种制造化合物半导体晶体的方法，包括以下步骤：在坩埚中提供化合物半导体熔体，所述熔体具有偏离化学计量的组成比，通过使用晶种从所述坩埚中拉出化合物半导体晶体，并且在 向所述熔体中加入所述化合物半导体熔体的组成元素，其以小于化学计量的量存在，所述元素的添加量足以保持所述第一步的组成比。 还提供了一种用于制造化合物半导体晶体的装置。

公开(公告)号：US4539067A

公开(公告)日：1985-09-03

申请号：US508091

申请日：1983-06-27

申请人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

发明人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

IPC分类号： C30B15/28 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B15/28 ,  C30B27/02 ,  Y10T117/1008 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit. At the same time, the heating control circuit generates a heating control signal to a heating device in response to a program signal which is generated from a program signal generator. In response to the output signal from the heating device, a heater which controls the temperature of the melt held in a vessel and which is arranged outside the vessel is heated according to the program.

公开(公告)号：US4591994A

公开(公告)日：1986-05-27

申请号：US543046

申请日：1983-10-18

申请人： Syoichi Washizuka ,  Sadao Matsumura

发明人： Syoichi Washizuka ,  Sadao Matsumura

IPC分类号： C30B15/28 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208 ,  B01D9/00 ,  G06G7/58 ,  G06G7/66

CPC分类号： C30B15/28 ,  Y10T117/1008

摘要： A method for controlling the shape of a single crystal. The weight of a single crystal pulled by the Czochralski method is detected, to obtain a weight signal W. The weight signal W is differentiated over time, to obtain a differential signal dW/dt. Using the differential signal dW/dt, (A.multidot.dW/dt+B).theta. is computed, to obtain an operation signal f. A and B are parameters which are determined by predetermined manufacturing conditions of the Czochralski method, and .theta. is a preset growing angle of the single crystal. The operation signal f is integrated over time, to obtain an integral signal F. The integral signal F and the differential signal dW/dt are compared to obtain a deviation signal. The heating power supplied to the crucible is controlled by use of the deviation signal, to keep the growing angle of the single crystal constant.

摘要翻译： 用于控制单晶形状的方法。 检测由Czochralski方法拉出的单晶的重量，以获得加权信号W.权重信号W随时间变化，以获得差分信号dW / dt。 使用差分信号dW / dt计算（AxdW / dt + B）θ，以获得操作信号f。 A和B是由Czochralski方法的预定制造条件确定的参数，θ是单晶的预设生长角。 操作信号f随时间积分，以获得积分信号F.比较积分信号F和差分信号dW / dt以获得偏差信号。 通过使用偏差信号来控制提供给坩埚的加热功率，以保持单晶的生长角度恒定。

公开(公告)号：US4686091A

公开(公告)日：1987-08-11

申请号：US758403

申请日：1985-07-24

申请人： Syoichi Washizuka ,  Masayuki Watanabe ,  Sadao Yashiro ,  Masae Nakanishi

发明人： Syoichi Washizuka ,  Masayuki Watanabe ,  Sadao Yashiro ,  Masae Nakanishi

IPC分类号： C30B15/14 ,  C30B27/02 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1064

摘要： An apparatus has a crucible for containing a GaAs raw material melt and a B.sub.2 O.sub.3 liquid encapsulating material therein, a heat generator arranged around the crucible so as to be coaxial therewith, and a heat insulator assembly arranged around the heat generator to surround the heat generator and the crucible for the purpose of manufacturing a compound semiconductor single crystal by pulling it from the raw material melt in the crucible by the LEC method. In the heat insulator assembly of the apparatus of the above construction, an upper heat insulator, arranged above the crucible and having at its center a circular hole for receiving the single crystal being pulled, comprises a plurality of radially divided sector-shaped split members. The split members are sintered bodies having aluminum nitride (AlN) as a major constituent.

摘要翻译： 一种装置，具有容纳GaAs原料熔体和B2O3液体封装材料的坩埚，配置在坩埚上以与其同轴的发热体，以及配置在发热体周围的热绝缘体，以包围发热体， 该坩埚用于通过LEC方法从坩埚中的原料熔体中拉出来制造化合物半导体单晶的目的。 在上述结构的装置的隔热体组件中，上坩埚布置在坩埚上方，并且在其中心具有用于接收被拉出的单晶的圆形孔，包括多个径向划分的扇形分割构件。 分割构件是具有氮化铝（AlN）作为主要成分的烧结体。

公开(公告)号：US4397813A

公开(公告)日：1983-08-09

申请号：US336708

申请日：1982-01-04

申请人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

发明人： Syoichi Washizuka ,  Jisaburo Ushizawa ,  Yoshihiro Kokubun ,  Tsuguo Fukuda

IPC分类号： C30B15/28 ,  C30B27/02 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B15/28 ,  C30B27/02 ,  Y10T117/1008 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The invention provides a method and an apparatus for manufacturing single crystals wherein the weight of the single crystal pulled is measured by a weight detector. The measured weight is compared with a reference weight signal which is generated from a reference weight signal generator. A weight deviation signal representing a difference between these two signals is generated by a weight deviation detector. The weight deviation signal is differentiated by a first differentiation circuit and a differentiation output signal obtained is corrected for compensation for the buoyancy of the liquid encapsulant by a signal which is generated by a buoyancy correction signal generator. A corrected signal thus obtained is differentiated by a second differentiation circuit and is thereafter added to the corrected signal. The addition result is phase-compensated by a phase-compensating circuit. The phase-compensated signal is supplied to a heating control circuit. At the same time, the heating control circuit generates a heating control signal to a heating device in response to a program signal which is generated from a program signal generator. In response to the output signal from the heating device, a heater which controls the temperature of the melt held in a vessel and which is arranged outside the vessel is heated according to the program.

摘要翻译： 本发明提供一种用于制造单晶的方法和装置，其中通过重量检测器测量单晶拉伸的重量。 将测量的权重与从参考权重信号发生器产生的参考权重信号进行比较。 表示这两个信号之间的差的重量偏差信号由重量偏差检测器产生。 权重偏差信号由第一微分电路区分，并且通过由浮力校正信号发生器产生的信号来校正获得的微分输出信号以补偿液体密封剂的浮力。 由此获得的校正信号由第二微分电路区分，然后加到校正信号上。 相加结果由相位补偿电路进行相位补偿。 相位补偿信号被提供给加热控制电路。 同时，加热控制电路响应于从节目信号发生器产生的节目信号，向加热装置产生加热控制信号。 响应于来自加热装置的输出信号，根据程序加热控制容器中保持的熔体的温度并设置在容器外部的加热器。