AMPLIFIER DEVICE
    14.
    发明公开
    AMPLIFIER DEVICE 审中-公开

    公开(公告)号:US20230283242A1

    公开(公告)日:2023-09-07

    申请号:US18019077

    申请日:2021-07-27

    申请人: TECHNETIX B.V.

    IPC分类号: H03F1/26 H03F3/62

    摘要: There is provided an amplifier device comprising a first directional coupler (12: 30, 32) and a second directional coupler (14: 30′, 32′) connected together so as to create separate upstream (16) and downstream (18) paths in which amplifier means (24, 24′) are located, wherein the first and second directional couplers (12, 14: 30, 32; 30′, 32′) are configured to have different signal loss characteristics, one of the directional couplers having low signal loss characteristics for upstream signals and the other directional coupler having low signal loss characteristics for downstream signals. The signal loss characteristics are preferably the coupling loss of each directional coupler (12, 14: 30, 32; 30′, 32′). The first and second directional couplers may each comprise a microstrip directional coupler (30; 30′) connected to a ferrite directional coupler (50; 50′).

    Advanced RF input port against surge

    公开(公告)号:US10320342B2

    公开(公告)日:2019-06-11

    申请号:US15719538

    申请日:2017-09-28

    发明人: Shi Man Li

    摘要: A bi-directional RF signal amplifier includes a RF input port and surge suppression circuitry downstream of the RF input port. First and second communications paths lead from the surge suppression circuitry to first and second RF output ports. The second communications path is considered non-interruptible and can support both downstream and upstream RF communications even in the absence of power being supplied to the RF signal amplifier. The surge suppression circuitry includes a data line connected to the RF input port. A first circuit path is electrically connected between the data line and ground. A gas discharge tube (GDT), within the first circuit path, acts as an open circuit when a voltage across the GDT is less than a predetermined value and acts as a short circuit when the voltage across the GDT exceeds the predetermined voltage. An electronic device is placed in series with the GDT within the first circuit path. The electronic device enables the second communications path of the RF signal amplifier to remain operable even if the GDT fails to a short circuit state due to a breakdown of the gases within the GDT.

    Amplifier devices with input line termination circuits

    公开(公告)号:US10270397B2

    公开(公告)日:2019-04-23

    申请号:US15698916

    申请日:2017-09-08

    申请人: NXP USA, Inc.

    发明人: Igor Blednov

    摘要: The embodiments described herein provide wideband highly asymmetrical power efficient amplifier device that include a compact input power distribution network with input termination circuit. The input termination circuit is configured to provide control of the power distribution at the amplifier input. In one embodiment, the input termination circuit is configured to generate and reflect a frequency dependent portion of an input signal back toward the amplifier device inputs. This input reflection controls the input power distribution and shape of time domain input signal in a way that can affect amplifier device efficiency and linearity.

    Bidirectional amplifier
    19.
    发明授权

    公开(公告)号:US10211797B2

    公开(公告)日:2019-02-19

    申请号:US15646991

    申请日:2017-07-11

    发明人: Jonathan Roderick

    IPC分类号: H03F1/22 H03F3/62 H03G1/00

    摘要: A bidirectional amplifier includes first and second ports, with a first summing node connected to the first port and a second summing node connected to the second port. First and second gain stages are connected between the first and second summing nodes, respectively, and a first node. First and second feedback stages are also connected between the first and second summing nodes, respectively, and the first node. The amplifier operates in a first mode in which an amplified version of a signal applied to the first port is provided at the second port, or a second mode in which an amplified version of a signal applied to the second port is provided at the first port. The first and second gain stages are preferably first and second common emitter cascode arrangements, and the first and second feedback stages are preferably first and second emitter followers.