公开(公告)号：USD530306S1

公开(公告)日：2006-10-17

申请号：US29227677

申请日：2005-04-13

Applicant: Bin Wang ,  Haibing Li

Designer： Bin Wang ,  Haibing Li

公开(公告)号：US20060209597A1

公开(公告)日：2006-09-21

申请号：US11084213

申请日：2005-03-17

Applicant: Bin Wang ,  Christopher Diorio ,  Todd Humes

Inventor： Bin Wang ,  Christopher Diorio ,  Todd Humes

IPC: G11C11/34

CPC classification number: G11C16/24

Abstract: NVM arrays include rows and columns of NVM cells comprising a floating gate, a programming element, and a logic storage element. During a programming or erase mode, the floating gate of each cell is charged to a predetermined level. At the beginning of a read mode, all storage elements are pre-charged to a high supply voltage level. Following the pre-charge, selected cells are read to determine stored bit values. A charge status of the floating gate of each cell determines whether the storage element is turned on and the pre-charge voltage is pulled down corresponding to a bit value.

Abstract translation: NVM阵列包括包括浮动栅极，编程元件和逻辑存储元件的NVM单元的行和列。 在编程或擦除模式期间，每个单元的浮置栅极被充电到预定的电平。 在读取模式开始时，所有存储元件都被预先充电到高电源电压。 在预充电之后，读取所选择的单元以确定存储的位值。 每个单元的浮动栅极的充电状态确定存储元件是否导通，并且预充电电压相应于位值被下拉。

公开(公告)号：US07001759B1

公开(公告)日：2006-02-21

申请号：US09359975

申请日：1999-07-23

Applicant: David B. Weiner ,  William V. Williams ,  Bin Wang

Inventor： David B. Weiner ,  William V. Williams ,  Bin Wang

IPC: A61K31/167 ,  C12N15/63 ,  C12N15/87 ,  C07H21/04

CPC classification number: A61K39/21 ,  A61K39/00 ,  A61K39/0011 ,  A61K39/0225 ,  A61K39/12 ,  A61K39/29 ,  A61K39/292 ,  A61K2039/53 ,  A61K2039/55516 ,  C12N15/63 ,  C12N2730/10134 ,  C12N2740/16034 ,  C12N2740/16134 ,  C12N2740/16234 ,  C12N2760/20134 ,  C12N2770/24234 ,  Y02A50/464 ,  Y02A90/26 ,  Y10S514/818

Abstract: Methods of introducing genetic material into cells of an individual and compositions and kits for practicing the same are disclosed. The methods comprise the steps of contacting cells of an individual with a polynucleotide function enhancer and administering to the cells, a nucleic acid molecule that is free of retroviral particles. The nucleic acid molecule comprises a nucleotide sequence that encodes a protein that comprises at least one epitope that is identical or substantially similar to an epitope of a pathogen antigen or an antigen associated with a hyperproliferative or autoimmune disease, a protein otherwise missing from the individual due to a missing, non-functional, or partially functioning gene, or a protein that produces a therapeutic effect on an individual. Methods of prophylactically and therapeutically immunizing an individual against pathogens are disclosed. Pharmaceutical compositions and kits for practicing methods of the present invention are disclosed.

Abstract translation: 公开了将遗传物质引入个体细胞的方法和用于实施其的组合物和试剂盒。 所述方法包括使个体的细胞与多核苷酸功能增强子接触并向细胞施用不含逆转录病毒颗粒的核酸分子的步骤。 核酸分子包含编码蛋白质的核苷酸序列，该蛋白质包含与病原体抗原或与过度增殖或自身免疫疾病相关的抗原的表位相同或基本相似的至少一个表位， 涉及一种缺失的，非功能的或部分功能的基因或对个体产生治疗作用的蛋白质。 公开了预防和治疗个体免受病原体的方法。 公开了用于本发明的实践方法的药物组合物和试剂盒。

公开(公告)号：US20060001087A1

公开(公告)日：2006-01-05

申请号：US10884236

申请日：2004-07-02

Applicant: Bin Wang

Inventor： Bin Wang

IPC: H01L29/76

CPC classification number: H01L29/4983 ,  H01L29/4916 ,  H01L29/7835

Abstract: A native high-voltage n-channel LDMOSFET includes a p− doped substrate, a first n+ doped region disposed in the p− doped substrate, a source terminal coupled to the first n+ doped region, an n− well disposed in the substrate, a second n+ doped region disposed in the n− well, a drain terminal coupled to the second n+ doped region, a p+ doped region disposed in the substrate, a body terminal coupled to the p+ doped region, a dielectric layer disposed over the p− doped substrate and a portion of the n− well, a first trench disposed in the n− well, the trench filled with a dielectric material that is in contact with the dielectric layer, a second trench disposed at least partially in the n− well, the second trench filled with a dielectric material and isolating the second n+ region from the p+ region, and a gate partially or fully reversely doped with p+ implant (or an equivalent technique) and disposed over the dielectric layer and a portion of the first trench.

Abstract translation: 原生高压n沟道LDMOSFET包括p掺杂衬底，设置在p掺杂衬底中的第一n +掺杂区，耦合到第一n +掺杂区的源极，设置在衬底中的n阱， 设置在n阱中的第二n +掺杂区域，耦合到第二n +掺杂区域的漏极端子，设置在衬底中的p +掺杂区域，耦合到p +掺杂区域的主体端子，设置在p掺杂区域上的介电层 衬底和n阱的一部分，设置在n阱中的第一沟槽，填充有与介电层接触的电介质材料的沟槽，至少部分地设置在n阱中的第二沟槽， 填充有电介质材料并且将第二n +区域与p +区域隔离的第二沟槽和部分地或完全地反向掺杂有p +注入（或等效技术）并且设置在电介质层和第一沟槽的一部分上的栅极。

公开(公告)号：US20050236666A1

公开(公告)日：2005-10-27

申请号：US10884326

申请日：2004-07-02

Applicant: Bin Wang

Inventor： Bin Wang

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/7835 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/42368

Abstract: A high-voltage graded junction LDMOSFET includes a substrate of a first conductivity type, a well of the first conductivity type disposed in the substrate, a first region of a second conductivity type disposed in the well of the first conductivity type, a source terminal coupled to the first region of the second conductivity type, a well of the second conductivity type disposed in the substrate, a second region of the second conductivity type disposed in the well of the second conductivity type, a drain terminal coupled to the second region of the second conductivity type, a region of the first conductivity type disposed in the substrate, a body terminal coupled to the region of the first conductivity type, a graded-junction region formed of material of the first conductivity type separating the well of the first conductivity type and the well of the second conductivity type, the material of the first conductivity type in the graded-junction region doped at least an order of magnitude less than the wells, a dielectric layer disposed over the well of the first conductivity type, the graded-junction region and a portion of the well of the second conductivity type, a first isolator disposed in the well of the second conductivity type, the isolator including a dielectric material that is in contact with the dielectric layer, a second isolator disposed at least partially in the well of the second conductivity type, the second isolator including a dielectric material and isolating the second region of the second conductivity type from the region of the first conductivity type, and a gate disposed over the dielectric layer and a portion of the first isolator.

Abstract translation: 高压梯度结LDMOSFET包括第一导电类型的衬底，设置在衬底中的第一导电类型的阱，设置在第一导电类型的阱中的第二导电类型的第一区域，源极端子耦合 到第二导电类型的第一区域，设置在基板中的第二导电类型的阱，设置在第二导电类型的阱中的第二导电类型的第二区域，耦合到第二导电类型的第二区域的漏极端子 第二导电类型，设置在基板中的第一导电类型的区域，耦合到第一导电类型的区域的主体端子，由第一导电类型的材料形成的分级接合区域，该第一导电类型的材料将第一导电类型的阱 和第二导电类型的阱，掺杂了至少一个数量级的渐变结区域中的第一导电类型的材料 小于所述阱的介质层，设置在所述第一导电类型的阱中的介电层，所述渐变接合区域和所述第二导电类型的阱的一部分，设置在所述第二导电类型的阱中的第一隔离器，所述隔离器 包括与电介质层接触的电介质材料，至少部分地设置在第二导电类型的阱中的第二隔离器，第二隔离器包括电介质材料，并将第二导电类型的第二区域与 第一导电类型和设置在电介质层上的栅极和第一隔离器的一部分。

公开(公告)号：US06943783B1

公开(公告)日：2005-09-13

申请号：US10005807

申请日：2001-12-05

Applicant: Tah-Kang Joseph Ting ,  Yin-Shing Lieu ,  Gyh-Bin Wang ,  Ming-Song Hwang

Inventor： Tah-Kang Joseph Ting ,  Yin-Shing Lieu ,  Gyh-Bin Wang ,  Ming-Song Hwang

IPC: G09G3/36 ,  G09G5/00

CPC classification number: G09G3/3611 ,  G09G2310/0229 ,  G09G2310/08 ,  G09G2340/0485

Abstract: This invention provides a method and apparatus for displaying an unscaled image frame on an LCD panel. The method and apparatus uses the same line buffers available to the digital signal processor DSP formerly used for scaling the displayed image up or down in size. No extra frame buffers are required by this invention since the frame rates of the source image and the LCD panel are the same. The image frame buffer is written to the LCD panel on every other panel vertical synchronization pulse. The vertical synchronization timing is shifted to the left or right in the time domain to center the image on the LCD panel.

Abstract translation: 本发明提供了一种用于在LCD面板上显示未缩放图像帧的方法和装置。 该方法和装置使用以前用于大小缩放显示图像的数字信号处理器DSP可用的相同行缓冲器。 由于源图像和LCD面板的帧速率相同，本发明不需要额外的帧缓冲器。 每隔一个面板垂直同步脉冲将图像帧缓冲区写入LCD面板。 垂直同步定时在时域中向左或向右移动，使图像在LCD面板上居中。

公开(公告)号：US06791382B1

公开(公告)日：2004-09-14

申请号：US10117951

申请日：2002-04-08

Applicant: Tah-Kang Joseph Ting ,  Gyh-Bin Wang ,  Ming-Song Huang

Inventor： Tah-Kang Joseph Ting ,  Gyh-Bin Wang ,  Ming-Song Huang

IPC: H03L706

CPC classification number: G09G5/008 ,  G09G3/3611 ,  G09G2310/08 ,  G09G2330/06 ,  H03L7/197 ,  H04N5/21

Abstract: A method to reduce clock noise in a multiple clock circuit is achieved. The method comprises, first, providing a periodic signal. Next, a first clock signal is provided having a frequency that is a constant multiple of the frequency of the periodic signal. Finally, a second clock signal is derived from the periodic signal. The second clock signal has a frequency that is a non-constant multiple of the periodic signal frequency. The non-constant multiple comprises the sum of a constant value plus a time-varying value. The spectral energy at the sum and difference frequencies of the first and second clock signals is reduced by frequency distribution spreading. A circuit is achieved comprising the above method.

Abstract translation: 实现了减少多时钟电路中的时钟噪声的方法。 该方法包括：首先提供周期信号。 接下来，提供具有作为周期信号的频率的恒定倍数的频率的第一时钟信号。 最后，从周期信号导出第二时钟信号。 第二时钟信号具有作为周期信号频率的非常数倍的频率。 非常数倍数包括恒定值加上时变值的和。 第一和第二时钟信号的和频和差频的频谱能量通过频率分布扩展而减小。 实现了包括上述方法的电路。

公开(公告)号：US06468982B1

公开(公告)日：2002-10-22

申请号：US08880576

申请日：1997-06-23

Applicant: David B. Weiner ,  William V. Williams ,  Bin Wang

Inventor： David B. Weiner ,  William V. Williams ,  Bin Wang

IPC: A61K4800

CPC classification number: C07K14/005 ,  A61K39/00 ,  A61K39/12 ,  A61K39/21 ,  A61K2039/53 ,  C12N15/87 ,  C12N2740/16034 ,  C12N2740/16122 ,  C12N2740/16134 ,  C12N2740/16222 ,  C12N2740/16234 ,  C12N2740/16322 ,  C12N2740/16334 ,  Y02A50/464 ,  Y02A90/26 ,  Y10S435/975 ,  Y10S514/818

Abstract: Methods of prophylactic and therapeutic immunization of an individual against pathogen infection, diseases associated with hyperproliferative cells and autoimmune diseases are disclosed. The methods comprise the steps of administering to cells of an individual, a nucleic acid molecule that comprises a nucleotide sequence that encodes a protein which comprises at least one epitope that is identical or substantially similar to an epitope of a pathogen antigen, a hyperproliferative cell associated protein or a protein associated with autoimmune disease respectively. In each case, nucleotide sequence is operably linked to regulatory sequences to enable expression in the cells. The nucleic acid molecule is free of viral particles and capable of being, expressed in said cells. The cells may be contacted cells with a cell stimulating agent. Methods of prophylactically and therapeutically immunizing an individual against HIV are disclosed. Pharmaceutical compositions and kits for practicing methods of the present invention are disclosed.

Abstract translation: 公开了个体对病原体感染的预防和治疗免疫的方法，与过度增殖细胞和自身免疫疾病相关的疾病。 所述方法包括对个体的细胞施用包含编码蛋白质的核苷酸序列的核酸分子的步骤，所述核苷酸序列包含与病原体抗原的表位相同或基本上相似的至少一个表位，相关的过度增殖细胞 蛋白质或与自身免疫疾病相关的蛋白质。 在每种情况下，核苷酸序列可操作地连接到调节序列以使得能够在细胞中表达。 核酸分子不含病毒颗粒，能够在所述细胞中表达。 细胞可以与细胞刺激剂接触细胞。 公开了预防和治疗个体免受HIV感染的方法。 公开了用于本发明的实践方法的药物组合物和试剂盒。

公开(公告)号：US06436878B1

公开(公告)日：2002-08-20

申请号：US09607185

申请日：2000-06-29

Applicant: Bin Wang ,  Feng Wang

Inventor： Bin Wang ,  Feng Wang

IPC: C09K700

CPC classification number: C08F222/40 ,  C08F220/28 ,  C08F226/02 ,  C09K8/12 ,  C09K8/24

Abstract: The invention relates to a rheology stabilizer or thinner for high-temperature high-pressure high-mineralized degree drilling fluids, methods of their preparation and use. The rheology stabilizer is a copolymer synthesized by an olefinic acid, ester of an olefinic acid, a sulfonic acid containing unsaturated linkage(s), an amide or imide containing unsaturated linkage(s), a quaternary compound containing olefinic linkage(s) reacting chemically with phosphorous acid or hypophosphorous acid, more particularly, copolymer of acrylic acid, 2-hydroxypropyl acrylate, N-(4-sulfophenyl)-maleimide, allyltrimethylammonium chloride and phosphorous acid. The copolymers have very high resistance to high-temperature high-pressure high-valence ions, can high-effectively adjust the rheology and thixotropy of drilling fluids, and can be used as the rheology stabilizer, thinner, clay and shale stabilizer of drilling fluids.

Abstract translation: 本发明涉及用于高温高压高矿化度钻井液的流变稳定剂或稀释剂，其制备和使用方法。 流变稳定剂是由烯属酸，烯属酸的酯，含不饱和键的磺酸，含不饱和键的酰胺或酰亚胺合成的共聚物，含有烯键的化合物的季铵化合物 更优选的是丙烯酸，丙烯酸2-羟丙酯，N-（4-磺基苯基）马来酰亚胺，烯丙基三甲基氯化铵和亚磷酸的共聚物。 该共聚物对高温高压高价离子具有非常高的耐受性，可以高效地调节钻井液的流变学和触变性，可用作钻井液的流变稳定剂，稀释剂，粘土和页岩稳定剂。

公开(公告)号：US06281887B1

公开(公告)日：2001-08-28

申请号：US09399140

申请日：1999-09-20

Applicant: Jiann Bin Wang

Inventor： Jiann Bin Wang

IPC: G09G500

CPC classification number: G06F3/03547

Abstract: A touchpad assembly includes a conductive base member having a looped frame, a plurality of spaced apart resilient touchpad supporting fingers that extend inwardly from the looped frame, and a resilient switch actuating finger that extends outwardly from the looped frame. The touchpad supporting fingers establish tight contact with the bottom side of a touchpad member to serve as a discharge path for static electricity. A key switch is disposed beneath the switch actuating finger, and a keypad member is mounted on a top side of the switch actuating finger. The keypad member is operable so as to bend the switch actuating finger relative to the looped frame and actuate the key switch.

Abstract translation: 触摸板组件包括具有环形框架的导电基座构件，从环形框架向内延伸的支撑指状物的多个间隔开的弹性触摸板以及从环形框架向外延伸的弹性开关致动指状件。 支撑手指的触摸板与触摸板构件的底侧紧密接触以用作静电的放电路径。 钥匙开关设置在开关致动指状物下方，并且键盘构件安装在开关致动指状件的顶侧上。 键盘构件可操作以使开关致动指相对于环形框架弯曲并致动钥匙开关。