公开(公告)号：US09048294B2

公开(公告)日：2015-06-02

申请号：US13860618

申请日：2013-04-11

Applicant: Applied Materials, Inc.

Inventor： Jing Tang ,  Zhefeng Li ,  Paul F. Ma ,  David Thompson

IPC: H01L21/768 ,  C23C16/34 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76843 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are manganese-containing films, as well as methods for providing the manganese-containing films. Doping manganese-containing films with Co, Mn, Ru, Ta, Al, Mg, Cr, Nb, Ti or V allows for enhanced copper barrier properties of the manganese-containing films. Also described are methods of providing films with a first layer comprising manganese silicate and a second layer comprising a manganese-containing film.

Abstract translation: 描述的是含锰膜，以及提供含锰膜的方法。 具有Co，Mn，Ru，Ta，Al，Mg，Cr，Nb，Ti或V的掺杂含锰膜能够提高含锰膜的铜屏障性能。 还描述了提供具有包含硅酸锰的第一层和包含含锰膜的第二层的膜的方法。

公开(公告)号：US20150118100A1

公开(公告)日：2015-04-30

申请号：US14515958

申请日：2014-10-16

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Ravi Kanjolia ,  Shaun Garrett

IPC: C23C16/18 ,  C01B21/06 ,  C22C22/00 ,  C23C16/455

CPC classification number: C23C16/18 ,  C22C22/00 ,  C23C16/34 ,  C23C16/45553

Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

Abstract translation: 提供了使用包含酰氨基亚胺基配体的金属配位络合物在表面上沉积包含锰的膜的方法。 某些方法包括将基底表面暴露于锰前体，并将基底表面暴露于共试剂。

公开(公告)号：US20150004316A1

公开(公告)日：2015-01-01

申请号：US14316126

申请日：2014-06-26

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: C23C16/08 ,  C23C16/18

CPC classification number: C23C16/08 ,  C23C16/18 ,  C23C16/45553

Abstract: Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.

Abstract translation: 提供了沉积薄膜的方法，包括将基底的至少一部分暴露于金属前体以在基底上提供第一金属和有机金属还原剂以在基底上沉积第二金属以形成第一金属的混合物或合金 和第二金属。 暴露于金属前体和有机金属还原剂可以是任意的顺序或同时的。