公开(公告)号：US07691559B2

公开(公告)日：2010-04-06

申请号：US11337986

申请日：2006-01-24

Applicant: Ching-Yu Chang ,  C. C. Ke ,  Vincent Yu

Inventor： Ching-Yu Chang ,  C. C. Ke ,  Vincent Yu

IPC: G03F7/00 ,  G03F7/004

CPC classification number: G03F7/2041 ,  G03F7/162 ,  G03F7/168 ,  G03F7/70341 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715

Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.

Abstract translation: 提供了在半导体晶片上进行浸渍光刻的方法。 该方法包括在半导体晶片的表面上提供一层抗蚀剂。 接下来，边缘珠去除过程以大于1000转/分钟的速度旋转晶片，并且在晶片旋转时通过喷嘴分配溶剂。 然后，使用浸没式光刻曝光系统曝光抗蚀剂层。

公开(公告)号：US20100075478A1

公开(公告)日：2010-03-25

申请号：US12564200

申请日：2009-09-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/265

CPC classification number: H01L21/31133 ,  H01L21/26513 ,  H01L21/31111 ,  Y10S438/948 ,  Y10S438/949

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 对衬底进行离子注入; 施加第一湿蚀刻溶液以除去图案化的光致抗蚀剂层; 以及施加第二湿蚀刻溶液以去除所述牺牲层。

公开(公告)号：US20100068884A1

公开(公告)日：2010-03-18

申请号：US12362174

申请日：2009-01-29

Applicant: Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Ching-Yu Chang

Inventor： Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Ching-Yu Chang

IPC: H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/31144 ,  H01L29/517

Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.

Abstract translation: 提供了包括蚀刻工艺的半导体制造方法。 该方法包括提供衬底并在衬底上形成目标层。 在目标层上形成蚀刻剂层。 蚀刻剂层与靶层反应并蚀刻目标层的一部分。 在一个实施例中，蚀刻目标层的原子层。 然后从衬底去除蚀刻剂层。 该过程可以迭代任何次数以去除期望量的目标层。 在一个实施例中，该方法提供了减少的横向蚀刻。 蚀刻剂层可以提供在薄目标层中形成图案的改进控制，例如栅极结构的覆盖层或高k电介质层。

公开(公告)号：US07642184B2

公开(公告)日：2010-01-05

申请号：US11687093

申请日：2007-03-16

Applicant: Ching-Yu Chang ,  Jen-Chieh Shih

Inventor： Ching-Yu Chang ,  Jen-Chieh Shih

IPC: H01L21/4763

CPC classification number: H01L21/31144 ,  H01L21/76808

Abstract: The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches.

Abstract translation: 本公开提供了一种双镶嵌加工的方法。 该方法包括提供其中形成有通孔的基板; 在通孔和基板上形成下层; 对底层进行溶剂洗涤处理; 在下层上形成含硅层; 图案化含硅层（SCL）以形成暴露SCL开口内的下层的SCL开口; 并在SCL开口内蚀刻衬底和底层以形成沟槽。

公开(公告)号：US20080309891A1

公开(公告)日：2008-12-18

申请号：US11762651

申请日：2007-06-13

Applicant: Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03B27/52

CPC classification number: G03F7/70341

Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备，包括具有成像透镜的透镜模块，位于透镜模块下方的被配置用于保持用于处理的基板的基板台，用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

公开(公告)号：US07462248B2

公开(公告)日：2008-12-09

申请号：US11671570

申请日：2007-02-06

Applicant: Chih-Cheng Chiu ,  Ching-Yu Chang

Inventor： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC: B08B3/04

CPC classification number: G03F1/82 ,  Y10S134/902

Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

Abstract translation: 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US07384726B2

公开(公告)日：2008-06-10

申请号：US11043598

申请日：2005-01-25

Applicant: Burn-Jeng Lin ,  Ching-Yu Chang

Inventor： Burn-Jeng Lin ,  Ching-Yu Chang

IPC: G03F7/00

CPC classification number: G03F7/40 ,  G03F7/2024

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract translation: 一种用于在光致抗蚀剂图像浸入液体中时使光致抗蚀剂图像硬化的方法，工具和机器。

公开(公告)号：US20080123029A1

公开(公告)日：2008-05-29

申请号：US11987074

申请日：2007-11-27

Applicant: Chi-Mo Ko ,  Chao-Yin Lin ,  Ching-Yu Chang ,  Li-Sen Chuang ,  Chia-Ching Chu

Inventor： Chi-Mo Ko ,  Chao-Yin Lin ,  Ching-Yu Chang ,  Li-Sen Chuang ,  Chia-Ching Chu

IPC: G02F1/1335

CPC classification number: G02F1/133512 ,  G02F2001/133388 ,  G02F2201/121

Abstract: A system for displaying images includes a liquid crystal display panel. The liquid crystal display panel comprises a color filter substrate having a light shielding layer on a peripheral area and a common electrode on a display area and the peripheral area, and an array substrate having a pixel electrode on the display area and a separate and independent electrode with a fixed voltage on the peripheral area. The liquid crystal display panel further comprises a liquid crystal layer between the color filter substrate and the array substrate.

Abstract translation: 用于显示图像的系统包括液晶显示面板。 液晶显示面板包括在周边区域具有遮光层的彩色滤光片基板和显示区域上的公共电极以及周边区域，以及在显示区域上具有像素电极的阵列基板和独立且独立的电极 外围区域固定电压。 液晶显示面板还包括滤色器基板和阵列基板之间的液晶层。

公开(公告)号：US07371671B2

公开(公告)日：2008-05-13

申请号：US11050312

申请日：2005-02-03

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin ,  Burn Jeng Lin

IPC: H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/31144

Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层，并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后，第二层用于修改基板以产生半导体器件的至少一部分。

公开(公告)号：US20080063976A1

公开(公告)日：2008-03-13

申请号：US11677089

申请日：2007-02-21

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00 ,  G03C1/00

CPC classification number: G03F7/11 ,  G03F7/0047 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094

Abstract: A resist material utilized in photolithography patterning includes a first material, and a second material dispersed in the first material. The second material is capable of diffusing to a top surface of the resist material, and has an etch rate different from that of the first material.

Abstract translation: 在光刻图案中使用的抗蚀剂材料包括第一材料和分散在第一材料中的第二材料。 第二材料能够扩散到抗蚀剂材料的顶表面，并且具有与第一材料不同的蚀刻速率。