CAVITY-MOUNTED CHIPS WITH MULTIPLE ADHESIVES
    202.
    发明公开

    公开(公告)号:US20240154384A1

    公开(公告)日:2024-05-09

    申请号:US17982606

    申请日:2022-11-08

    CPC classification number: H01S5/0236 H01S5/02251 H01S5/024

    Abstract: Structures for a cavity-mounted chip and methods of fabricating a structure for a cavity-mounted chip. The structure comprises a laser chip including a body attached to a substrate. The laser chip has an output, and the body of the laser chip has a bottom surface spaced from the substrate by a gap. The structure further comprises a first adhesive in the first gap and a second adhesive positioned in the first gap between the first adhesive and the output of the laser chip. The first adhesive has a first thermal conductivity, the second adhesive has a second thermal conductivity, and the first thermal conductivity of the first adhesive is greater than the second thermal conductivity of the second adhesive.

    PHOTONIC STRUCTURE WITH WAVEGUIDE-TO-PHOTODETECTOR COUPLER ORIENTED ALONG SIDEWALL OF A PHOTODETECTOR

    公开(公告)号:US20240142725A1

    公开(公告)日:2024-05-02

    申请号:US18050147

    申请日:2022-10-27

    Inventor: Yusheng Bian

    CPC classification number: G02B6/4203 H01L31/02327 H01L31/105

    Abstract: Disclosed are embodiments of a photonic structure with at least one tapered coupler positioned laterally adjacent and along the length of a sidewall of a layer, such as a light absorption layer (LAL), of a photodetector to facilitate mode matching. Some embodiments include a vertically oriented photodetector, which is on an insulator layer and has an LAL stacked between bottom and top semiconductor layers, and a coupler, which is on the insulator layer positioned laterally adjacent to the photodetector and has stacked cores with one of the cores being at the same level as the LAL. Other embodiments include a horizontally oriented photodetector, which is on an insulator layer and has an LAL on a recessed section of a bottom semiconductor layer between side sections, and coupler(s), which is/are above side section(s) of the bottom semiconductor layer and, thus, positioned laterally adjacent to one or both sides of the LAL.

    STRUCTURE INCLUDING HYBRID PLASMONIC WAVEGUIDE USING METAL SILICIDE LAYER

    公开(公告)号:US20240111088A1

    公开(公告)日:2024-04-04

    申请号:US17936939

    申请日:2022-09-30

    CPC classification number: G02B6/12004 G02B6/13 G02B2006/12061

    Abstract: A structure or PIC structure includes a hybrid plasmonic (HP) waveguide. The HP waveguide includes a waveguide core, and a metal silicide layer contacting the waveguide core. The metal silicide layer replaces noble metals typically provided in hybrid plasmonic waveguides, providing improved optical signal containment characteristics. The metal silicide layer is also compatible with CMOS fabrication techniques, and capable of additional scaling with other CMOS structures. The HP waveguide also has a reduce form factor compared to conventional HP waveguides, providing room for more waveguides closer together.

    STRUCTURES FOR AN OPTICAL COUPLER AND RELATED METHODS

    公开(公告)号:US20240061176A1

    公开(公告)日:2024-02-22

    申请号:US17892584

    申请日:2022-08-22

    Inventor: Yusheng Bian

    CPC classification number: G02B6/1228

    Abstract: Structures for an optical coupler and methods of forming an optical coupler. The structure comprises a first waveguide core including a first tapered section, a second waveguide core including a second tapered section overlapped with the first tapered section, and an active layer including a third tapered section overlapped with the second tapered section. The first waveguide core comprises a first passive material, the second waveguide core comprises a second passive material, and the active layer comprises an active material.

    WAVEGUIDE CROSSINGS WITH A MULTIPLE-LEVEL NON-CONTACTING ARRANGEMENT

    公开(公告)号:US20240027685A1

    公开(公告)日:2024-01-25

    申请号:US17869858

    申请日:2022-07-21

    Inventor: Yusheng Bian

    CPC classification number: G02B6/125 G02B6/136 G02B2006/12119

    Abstract: Structures for a waveguide crossing and methods of fabricating a structure for a waveguide crossing. The structure comprises a first waveguide core and a second waveguide core each including a first section, a second section, and a first waveguide bend connecting the first section to the second section. The second section terminates the first waveguide core. The second section terminates the second waveguide core. The second waveguide bend has a side surface that is spaced from a side surface of the first waveguide bend by a gap. A third waveguide core is terminated by a section having an overlapping arrangement with the second section of the first waveguide core. A fourth waveguide core is terminated by a section having an overlapping arrangement with the second section of the second waveguide core.

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