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    DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
    203.
    发明申请
    DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE 有权
    显示设备，显示模块和电子设备

    公开(公告)号：US20160232834A1

    公开(公告)日：2016-08-11

    申请号：US14925744

    申请日：2015-10-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD

    Inventor： Hajime KIMURA ,  Hiroyuki MIYAKE

    IPC: G09G3/20

    CPC classification number: G09G3/325 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/029 ,  G09G2320/045 ,  G09G2320/046 ,  G09G2330/045

    Abstract: To provide a display device which can perform external correction and has a reduced area occupied by a read circuit. The display device includes a pixel and the read circuit. The pixel includes a transistor and a display element. The read circuit includes a function selection portion and an operational amplifier. The transistor is electrically connected to the function selection portion through a wiring. The operational amplifier is electrically connected to the function selection portion. The function selection portion includes at least one switch and can select the function of the read circuit by switching of the switch.

    Abstract translation: 提供一种能够执行外部校正并且具有由读取电路占用的面积减小的显示装置。 显示装置包括像素和读取电路。 像素包括晶体管和显示元件。 读取电路包括功能选择部分和运算放大器。 晶体管通过布线电连接到功能选择部分。 运算放大器电连接到功能选择部分。 功能选择部分包括至少一个开关，并且可以通过切换开关来选择读取电路的功能。

    SEMICONDUCTOR DEVICE
    204.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20160191052A1

    公开(公告)日：2016-06-30

    申请号：US14976201

    申请日：2015-12-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hajime KIMURA ,  Hiroyuki MIYAKE

    IPC: H03K17/687

    CPC classification number: H03K17/145

    Abstract: To provide a semiconductor device in which external correction can be performed, the area occupied by a read circuit is reduced, and power consumption is reduced. One embodiment of the semiconductor device includes a pixel and a read circuit. The pixel includes a transistor and a display element. The read circuit includes a function selection portion and an operational amplifier. The transistor is electrically connected to the function selection portion through a wiring. The operational amplifier is electrically connected to the function selection portion. The function selection portion includes at least one switch. The function selection portion can select a function of the read circuit by controlling the switch.

    Abstract translation: 为了提供可以执行外部校正的半导体器件，减少了读取电路占据的面积，并且降低了功耗。 半导体器件的一个实施例包括像素和读取电路。 像素包括晶体管和显示元件。 读取电路包括功能选择部分和运算放大器。 晶体管通过布线电连接到功能选择部分。 运算放大器电连接到功能选择部分。 功能选择部分包括至少一个开关。 功能选择部分可以通过控制开关来选择读取电路的功能。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE
    205.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE HAVING SEMICONDUCTOR DEVICE 有权
    具有半导体器件的半导体器件和显示器件

    公开(公告)号：US20160190331A1

    公开(公告)日：2016-06-30

    申请号：US14978470

    申请日：2015-12-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroyuki MIYAKE ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI

    IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04

    CPC classification number: H01L29/7869 ,  G09G3/3233 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3225 ,  H01L27/323 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78633 ,  H05B33/08

    Abstract: Luminance variation due to change of current through a light-emitting element caused by change in environmental temperature is suppressed. Current through a first light-emitting element in a pixel portion is controlled by a monitor circuit. The monitor circuit includes a second light-emitting element, a transistor, a resistor, and an amplifier circuit. An anode of the second light-emitting element is connected to a source of the transistor. A cathode of the second light-emitting element is connected to the resistor and a first input terminal of the amplifier circuit. A second input terminal of the amplifier circuit is connected to a second power supply line. An output terminal of the amplifier circuit is connected to a gate of the transistor. The drain of the transistor is connected to a third power supply line. The transistor and the resistor each include an oxide semiconductor film.

    Abstract translation: 抑制由于环境温度的变化引起的通过发光元件的电流的变化引起的亮度变动。 通过监视电路来控制像素部分中的第一发光元件的电流。 监视电路包括第二发光元件，晶体管，电阻器和放大器电路。 第二发光元件的阳极连接到晶体管的源极。 第二发光元件的阴极连接到电阻器和放大器电路的第一输入端子。 放大器电路的第二输入端连接到第二电源线。 放大电路的输出端连接到晶体管的栅极。 晶体管的漏极连接到第三电源线。 晶体管和电阻器各自包括氧化物半导体膜。

    SENSOR, INPUT DEVICE, AND INPUT/OUTPUT DEVICE
    206.
    发明申请
    SENSOR, INPUT DEVICE, AND INPUT/OUTPUT DEVICE 审中-公开
    传感器，输入设备和输入/输出设备

    公开(公告)号：US20150355763A1

    公开(公告)日：2015-12-10

    申请号：US14638649

    申请日：2015-04-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hiroyuki MIYAKE ,  Kazunori WATANABE

    IPC: G06F3/041 ,  G06F1/16 ,  G06F3/044

    CPC classification number: G06F3/0412 ,  G06F1/16 ,  G06F1/1641 ,  G06F1/1677 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103

    Abstract: [Problem] A novel input sensor that is highly convenient or reliable is provided. Furthermore, a novel input device that is highly convenient or reliable is provided. Furthermore, a novel input/output device that is highly convenient or reliable is provided.[Solution] The following structure including a window portion which transmits visible light, a light-transmitting sensor element which includes a flexible insulating layer and a pair of electrodes, between which it is interposed, and overlaps with the window portions, a sensing circuit which supplies a sensor signal on the basis of a change in the capacitance of the sensor element, and a flexible base layer supporting the sensor element and the sensor circuit is achieved.

    Abstract translation: [问题]提供了一种非常方便或可靠的新型输入传感器。 此外，提供了一种非常方便或可靠的新型输入装置。 此外，提供了一种非常方便或可靠的新型输入/输出装置。 [解决方案]包括透射可见光的窗口部分，包括柔性绝缘层的透光传感器元件和一对电极，其间插入其中并与窗口部分重叠的以下结构;感测电路， 基于传感器元件的电容的变化提供传感器信号，并且实现了支撑传感器元件和传感器电路的柔性基底层。

    SEMICONDUCTOR DEVICE
    207.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150349135A1

    公开(公告)日：2015-12-03

    申请号：US14823044

    申请日：2015-08-11

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Daisuke MATSUBAYASHI ,  Hiroyuki MIYAKE

    IPC: H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  H01L29/24 ,  H01L29/04

    CPC classification number: H01L29/7869 ,  H01L29/045 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78627 ,  H01L29/78696

    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a semiconductor film overlapping with the gate electrode with the gate insulating film positioned therebetween, a source electrode and a drain electrode that are in contact with the semiconductor film, and an oxide film over the semiconductor film, the source electrode, and the drain electrode. An end portion of the semiconductor film is spaced from an end portion of the source electrode or the drain electrode in a region overlapping with the semiconductor film in a channel width direction. The semiconductor film and the oxide film each include a metal oxide including In, Ga, and Zn. The oxide film has an atomic ratio where the atomic percent of In is lower than the atomic percent of In in the atomic ratio of the semiconductor film.

    Abstract translation: 提供了一种高度可靠的半导体器件。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，与栅电极重叠的半导体膜，栅绝缘膜位于其间，与半导体膜接触的源电极和漏极，以及 半导体膜上的氧化膜，源电极和漏电极。 半导体膜的端部与沟道宽度方向上与半导体膜重叠的区域与源电极或漏电极的端部隔开。 半导体膜和氧化膜各自包括包含In，Ga和Zn的金属氧化物。 氧化物膜具有原子比，其中In的原子百分比低于In的原子百分比，以半导体膜的原子比计。

    DISPLAY DEVICE AND INPUT/OUTPUT DEVICE
    208.
    发明申请
    DISPLAY DEVICE AND INPUT/OUTPUT DEVICE 审中-公开
    显示设备和输入/输出设备

    公开(公告)号：US20150317028A1

    公开(公告)日：2015-11-05

    申请号：US14695737

    申请日：2015-04-24

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Kei TAKAHASHI ,  Hiroyuki MIYAKE

    IPC: G06F3/041 ,  G09G3/32

    Abstract: A circuit which detects an output current from a pixel and an output current from an input device, and converts the output current into data is provided. The current detection circuit includes an integrator circuit, a comparator, a counter, and a latch. The integrator circuit integrates the potential of a first signal during a period determined by a second signal and outputting it as a third signal. The comparator compares the potential of the third signal with a first potential and outputting a fourth signal. The counter outputs the number of pulses included in a fifth signal as a sixth signal during a period determined by the fourth signal. The latch holds the sixth signal. The integrator circuit preferably further includes an operational amplifier and some capacitors. The first signal is supplied from a pixel included in a display device or an input portion included in an input device.

    Abstract translation: 提供了检测来自像素的输出电流和来自输入装置的输出电流并将输出电流转换为数据的电路。 电流检测电路包括积分器电路，比较器，计数器和锁存器。 积分器电路在由第二信号确定的周期中积分第一信号的电位，并将其作为第三信号输出。 比较器将第三信号的电位与第一电位进行比较，并输出第四信号。 在由第四信号确定的周期期间，计数器输出包括在第五信号中的脉冲数作为第六信号。 锁存器保持第六个信号。 积分器电路优选地还包括运算放大器和一些电容器。 第一信号从包括在显示装置中的像素或包括在输入装置中的输入部分提供。

    PULSE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE
    210.
    发明申请
    PULSE GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE 审中-公开
    脉冲发生电路和半导体器件

    公开(公告)号：US20150248869A1

    公开(公告)日：2015-09-03

    申请号：US14714473

    申请日：2015-05-18

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

    IPC: G09G3/36 ,  G09G5/18

    CPC classification number: G09G3/3677 ,  G09G3/3266 ,  G09G3/3648 ,  G09G3/3696 ,  G09G5/18 ,  G09G2300/0404 ,  G09G2300/0413 ,  G09G2310/0205 ,  G09G2310/0286 ,  G09G2310/0291 ,  G11C19/28 ,  H03K3/356026

    Abstract: Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.

    Abstract translation: 在像素部分的左侧和右侧设置两个包括移位寄存器和包括单导电型晶体管的解复用器的栅极驱动器。 栅极线在每M行中交替连接到左侧和右侧栅极驱动器。 移位寄存器包括串联连接的k个第一单元电路。 解复用器包括k个第二单位电路，其中每个电路从第一单元电路输入信号，并且连接M个栅极线。 第二单元电路选择在M个栅极线之间输出来自第一单位电路的输入信号的一个或多个布线，并将来自第一单元电路的信号输出到所选择的布线。 由于门信号可以从一级移位寄存器的输出输出到M条栅极线，所以移位寄存器的宽度可以变窄。

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