公开(公告)号：US10396171B2

公开(公告)日：2019-08-27

申请号：US16178580

申请日：2018-11-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung ,  Rung-Yuan Lee ,  Chih-Wei Yang

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51

Abstract: The present invention provides a method for forming a semiconductor structure, including the following steps: first, a substrate is provided, an interlayer dielectric (ILD) is formed on the substrate, a first dummy gate is formed in the ILD, wherein the first dummy gate includes a dummy gate electrode and two spacers disposed on two sides of the dummy gate electrode respectively. Next, two contact holes are formed in the ILD at two sides of the first dummy gate respectively. Afterwards, the dummy gate electrode is removed, so as to form a gate recess in the ILD, a first material layer is filled in the gate recess and a second material layer is filled in the two contact holes respectively, and an anneal process is performed on the first material layer and the second material layer, to bend the two spacers into two inward curving spacers.

公开(公告)号：US10373827B2

公开(公告)日：2019-08-06

申请号：US15489842

申请日：2017-04-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L21/033 ,  H01L21/762 ,  H01L29/66 ,  H01L21/308

Abstract: A method of pattern transfer is provided, comprising: providing a target layer; forming a first pattern above the target layer; forming a second pattern (such as spacer loops) above the target layer and above the first pattern, wherein one closed end of the second pattern partially overlaps with the first pattern; and transferring the second pattern to the target layer, wherein the first pattern stops transferring pattern of the closed end of the second pattern to the target layer.

公开(公告)号：US20190221482A1

公开(公告)日：2019-07-18

申请号：US16360019

申请日：2019-03-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung ,  Chih-Wei Yang

IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/12 ,  H01L21/84 ,  H01L29/08 ,  H01L27/088

CPC classification number: H01L21/823481 ,  H01L21/8213 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/84 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66545

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, and a spacer. The semiconductor substrate includes at least one fin structure. The isolation structure is partly disposed in the fin structure and partly disposed above the fin structure. The fin structure includes a first fin and a second fin elongated in the same direction. A part of the isolation structure is disposed between the first fin and the second fin in the direction where the first fin and the second fin are elongated. The spacer is disposed on sidewalls of the isolation structure on the fin structure. The isolation structure in the present invention is partly disposed in the fin structure and partly disposed above the fin structure. The negative influence of a gate structure formed on the isolation structure and sinking into the isolation structure on the isolation performance of the isolation structure may be avoided accordingly.

公开(公告)号：US20190214480A1

公开(公告)日：2019-07-11

申请号：US16357333

申请日：2019-03-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Chien Hsieh ,  En-Chiuan Liou ,  Chih-Wei Yang ,  Yu-Cheng Tung ,  Po-Wen Su

IPC: H01L29/66 ,  H01L21/266 ,  H01L21/265 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/7851

Abstract: A fabricating method of a semiconductor structure includes the following steps. A gate material layer is formed on a semiconductor substrate. A patterned mask layer is formed on the gate material layer. The pattern mask layer includes at least one opening exposing a part of the gate material layer. An impurity treatment is performed to the gate material layer partially covered by the pattern mask layer for forming at least one doped region in the gate material layer. An etching process is performed to remove the gate material layer including the doped region. A dummy gate may be formed by patterning the gate material layer, and the impurity treatment may be performed after the step of forming the dummy gate. The performance of the etching processes for removing the gate material layer and/or the dummy gate may be enhanced, and the gate material residue issue may be solved accordingly.

公开(公告)号：US10319597B2

公开(公告)日：2019-06-11

申请号：US15880506

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L21/283 ,  H01L21/84 ,  H01L21/8234 ,  H01L21/31 ,  H01L21/762 ,  H01L21/308

Abstract: A semiconductor device includes first fin-shaped structures and second fin-shaped structures, which are separately disposed on a semiconductor substrate. Each of the first and second fin-shaped structures includes a base portion and a top portion protruding from the top portion. The base portions of the second fin-shaped structures are wider than the top portions of the second fin-shaped structures, and the top portions of the second fin-shaped structures are as wide as the top portions of the first fin-shaped structures. Each second fin-shaped structure further includes a recessed region on its sidewall.

公开(公告)号：US10290551B2

公开(公告)日：2019-05-14

申请号：US15495942

申请日：2017-04-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L21/66 ,  H01L23/544 ,  G03F7/20

Abstract: The present invention provides an overlay mark, including a substrate and plural sets of first pattern block and second pattern block. A first direction and a second direction are defined on the substrate, wherein the first direction and the second direction are perpendicular to each other. In each set, the first pattern block is rotational symmetrical to the second pattern block. Each first pattern block includes a big frame and plural small frame. Each second pattern block includes a big frame and plural small frame. The width of the big frame is greater than three times of the width of the small frame. The present invention further provides a method for evaluating the stability of a semiconductor manufacturing process.

公开(公告)号：US20190109207A1

公开(公告)日：2019-04-11

申请号：US16212700

申请日：2018-12-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/225 ,  H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/161 ,  H01L29/24 ,  H01L21/02

Abstract: A method for fabricating a semiconductor structure is provided in the present invention. The method includes the steps of forming a plurality of fins in a first region, a second region and a dummy region, forming a first solid-state dopant source layer and a first insulating buffer layer in the first region, forming a second solid-state dopant source layer and a second insulating buffer layer in the second region and the dummy region, and performing an etch process to cut the fin in the dummy region.

公开(公告)号：US20190088782A1

公开(公告)日：2019-03-21

申请号：US16180033

申请日：2018-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/7843 ,  H01L21/823807 ,  H01L21/823864 ,  H01L27/088 ,  H01L27/092 ,  H01L29/42376 ,  H01L29/4991 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: The present invention provides a method for fabricating a semiconductor structure, the method at least comprises: firstly, a substrate is provided, a dielectric layer is formed on the substrate, a gate conductive layer and two spacers are formed and disposed in the dielectric layer, wherein the two spacers are respectively disposed on both sides of the gate conductive layer, next, parts of the gate conductive layer are removed, and parts of the two spacers are removed, wherein a top surface of the two spacers is lower than a top surface of the gate conductive layer, and afterwards, a stress cap layer is then formed, overlying the gate conductive layer and the two spacers, wherein parts of the stress cap layer is located right above the two spacers.

公开(公告)号：US20190027410A1

公开(公告)日：2019-01-24

申请号：US16143368

申请日：2018-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/84

Abstract: A semiconductor device includes a semiconductor substrate, a shallow trench isolation structure, a plurality of gate electrodes, and a gate isolation structure. The semiconductor substrate includes a plurality of fin structures, and each of the fin structures is elongated in a first direction. The shallow trench isolation structure is disposed on the semiconductor substrate and disposed between the fin structures. The gate electrodes are disposed on the semiconductor substrate and the shallow trench isolation structure. Each of the gate electrodes is elongated in a second direction and disposed straddling at least one of the fin structures. The gate isolation structure is disposed between two adjacent gate electrodes in the second direction. A total height of the gate isolation structure is greater than a height of the shallow trench isolation structure formed on the semiconductor substrate and located between the fin structures.

公开(公告)号：US10170623B2

公开(公告)日：2019-01-01

申请号：US15796874

申请日：2017-10-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Tang-Chun Weng ,  Chien-Hao Chen

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer and a dummy gate structure. The fin shaped structures are disposed on a substrate. The trench is disposed between the fin shaped structures. The spacing layer is disposed on sidewalls of the trench, wherein the spacing layer has a top surface lower than a top surface of the fin shaped structures. The dummy gate structure is disposed on the fin shaped structures and across the trench.