公开(公告)号：US20170234934A1

公开(公告)日：2017-08-17

申请号：US15586062

申请日：2017-05-03

Applicant: University of Electronic Science and Technology of China

Inventor： Qishui ZHONG ,  Baihua LI ,  Hui LI ,  Yuqing ZHAO

IPC: G01R31/36

CPC classification number: G01R31/3651 ,  G01R31/3606 ,  G01R31/361 ,  G01R31/362 ,  G01R31/3675

Abstract: Disclosed is a power system including a battery pack and a battery management system, the battery management system including a controller and a storage unit storing one or more executable programs executable to achieve battery functions.

公开(公告)号：US09734398B2

公开(公告)日：2017-08-15

申请号：US14958369

申请日：2015-12-03

Applicant: University of Electronic Science and Technology of China

Inventor： Yunping Chen ,  Ling Tong ,  Weihong Han

IPC: G06K9/00 ,  G06K9/46 ,  G06T7/00 ,  G06K9/32 ,  G06T7/13

CPC classification number: G06K9/00637 ,  G06K9/00651 ,  G06K9/3241 ,  G06K9/4604 ,  G06K9/4633 ,  G06T7/13 ,  G06T2207/10032 ,  G06T2207/30184

Abstract: A method and apparatus for identifying an object are disclosed. The method includes: performing linear feature detection on an image to be identified by using a linear feature detecting method to obtain detected linear features, wherein the linear feature detection method transforms detection of linear features in an image space to detection of extremal points in another space and assigns larger weights to continuous image points than to discrete image points during the transformation by using a continuous cluster factor; and identifying an object to be identified from the detected linear features by considering characteristics of the object to be identified. The method and apparatus for identifying an object of the invention, when used to detect and identify weak linear objects in high resolution remote sensing images, can effectively suppress the system noise and ambient noise, thereby successfully identifying the interested object and avoiding false alarms. Moreover, short line segments can also be identified.

公开(公告)号：US09709635B2

公开(公告)日：2017-07-18

申请号：US14192867

申请日：2014-02-27

Applicant: University of Electronic Science and Technology of China

Inventor： Qishui Zhong ,  Baihua Li ,  Hui Li ,  Yuqing Zhao

IPC: G06F17/50 ,  G01R31/36

CPC classification number: G01R31/3651 ,  G01R31/3606 ,  G01R31/361 ,  G01R31/362 ,  G01R31/3675

Abstract: The present invention provides a SOC estimation method applied to a battery system comprising a battery pack. The SOC estimation method comprises the steps of: determining an initial SOC value; determining whether the battery pack is in a working status; measuring the voltage and current of the battery pack if the battery pack is in the working status; calculating a current SOC value by using an ampere-hour method based on the initial SOC value and the measured voltage and current; determining dynamic characteristic parameters of the battery pack; and optimizing the current SOC value by using extended Kalman filter (EKF) method and based on the dynamic characteristic parameters of the battery pack.

公开(公告)号：US20170086259A1

公开(公告)日：2017-03-23

申请号：US15371205

申请日：2016-12-07

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaosong Du ,  Yaru Li ,  Yuming Wu ,  Qi Yao ,  Pengfei Guo ,  Huan Yuan ,  Huiling Tai

IPC: H05B3/34 ,  H05B3/26

Abstract: The present invention relates to a serpentine film heater for adjusting temperature uniformity and a method of temperature adjusting, including a substrate and a serpentine film heating wire which is deposited on the substrate, wherein the serpentine film heating wire is formed by several parallel heating sections and connecting lines. In the longitudinal direction, the temperature uniformity is improved by adjusting the spacings between adjacent heating sections or line widths of the heating sections separately or in combination. In the transverse direction, the every heating section is adjusted to a shape which is wide in center and narrow at two ends. By adjusting the spacings and line widths in both transverse and longitudinal directions the present invention reduces heating power in the central part of the substrate and increases the heating power on the edges, thus compensates the heat transfer difference between center and edges and improves the temperature uniformity.

公开(公告)号：US09590739B2

公开(公告)日：2017-03-07

申请号：US14892578

申请日：2014-05-20

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Yaxin Zhang ,  Shen Qiao ,  Shixiong Liang ,  Ziqiang Yang ,  Zhihong Feng

IPC: H01L29/66 ,  H04B10/516 ,  H04B10/90 ,  H04B10/50

CPC classification number: H04B10/516 ,  H04B10/501 ,  H04B10/90

Abstract: Terahertz external modulator based on high electron mobility transistors belongs to the field of electromagnetic functional devices technology. This invention includes the semiconductor substrate (1), the epitaxial layer (2), and the modulation-unit array (4). The epitaxial layer (2) is set on the semiconductor substrate (1). The modulation-unit (4), the positive electrode (3), and the negative electrode (5) are all set on the epitaxial layer (2). The modulation-unit array includes at least three units with each of them is composed of high electron mobility transistors and metamaterial-structure. The gates of transistors connect to the negative electrode (5), and the sources and drains connect to the positive electrode (3). This invention is used for manipulation of spatial transmission terahertz waves. It could be operated at room temperatures, normal pressures, and non-vacuum condition. It does not need to load on the waveguide, thus is easy to package and use.

Abstract translation: 基于高电子迁移率晶体管的太赫兹外部调制器属于电磁功能器件技术领域。 本发明包括半导体衬底（1），外延层（2）和调制单元阵列（4）。 外延层（2）设置在半导体衬底（1）上。 调制单元（4），正极（3）和负极（5）全部设置在外延层（2）上。 调制单元阵列包括至少三个单元，每个单元由高电子迁移率晶体管和超材料结构组成。 晶体管的栅极连接到负极（5），源极和漏极连接到正极（3）。 本发明用于空间传输太赫兹波的操纵。 它可以在室温，正常压力和非真空条件下运行。 它不需要加载在波导上，因此易于封装和使用。

公开(公告)号：US20170003328A1

公开(公告)日：2017-01-05

申请号：US15146227

申请日：2016-05-04

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Qinchuan ZHANG ,  Kuojun YANG ,  Lianping GUO ,  Hao ZENG ,  Jia ZHAO ,  Jinpeng SONG

IPC: G01R19/25

CPC classification number: G01R13/0272 ,  G01R13/0254

Abstract: A method for measuring waveform capture rate (WRC) of DSO based on average dead time measurement. First generating ramp signal or symmetric triangular wave signal as base signal, a trigger signal, the frequency which is higher than the nominal maximum waveform capture rate of the DSO under measurement; secondly, setting the parameters of DSO for measuring; then obtaining a plurality of test signals by delaying base signal K times with different delay time, for each test signal, inputting it the trigger signal simultaneously to DSO, calculating dead time between two adjacent captured waveforms according to their initial voltages, finally calculating waveform capture rate based on average dead times. The waveform capture rate obtained can effectively reflect the overall capturing capacity of DSO, more tellingly, the waveform capturing capacity of acquisition system of DSO.

Abstract translation: 基于平均死区时间测量测量DSO的波形捕获率（WRC）的方法。 首先产生斜坡信号或对称三角波信号作为基准信号，触发信号，其频率高于测量的DSO的标称最大波形捕获率; 其次，设置测量用DSO的参数; 然后通过以不同的延迟时间延迟基本信号K次来获得多个测试信号，对于每个测试信号，将触发信号同时输入到DSO，根据它们的初始电压计算两个相邻捕获波形之间的死区时间，最后计算波形捕获 基于平均死亡时间。 获得的波形捕获率可以有效反映DSO的整体捕获能力，更具体地说，是DSO采集系统的波形捕获能力。

公开(公告)号：US20160322483A1

公开(公告)日：2016-11-03

申请号：US15209745

申请日：2016-07-13

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA ,  INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN, UESTC

Inventor： Jinping ZHANG ,  Yadong SHAN ,  Gaochao XU ,  Xin YAO ,  Jingxiu LIU ,  Zehong LI ,  Min REN ,  Bo ZHANG

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/7397 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/4236

Abstract: A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

Abstract translation: 一种双向IGBT器件，其包括：两个MOS结构，衬底漂移层，用于载流子存储或场停止的两个高掺杂掩埋层，两个金属电极和隔离电介质。 每个MOS结构包括：体区，重掺杂源区，体接触区和栅结构。 每个栅极结构包括：栅极电介质和栅极导电材料。 两个MOS结构对称地设置在衬底漂移层的顶表面和背表面上。 重掺杂源极区域和体接触区域设置在体区域中并且彼此独立，并且重掺杂源极区域和体接触区域的两个表面连接到两个金属电极中的每一个。 栅极电介质将栅极导电材料与每​​个MOS结构的沟道区分离。

公开(公告)号：US09481926B2

公开(公告)日：2016-11-01

申请号：US14880148

申请日：2015-10-09

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Tao Wang ,  Yadong Jiang

IPC: C23C14/08 ,  C23C14/35 ,  C23C14/00 ,  C23C14/34 ,  H01B1/02 ,  C23C14/58 ,  C01G31/02

CPC classification number: C23C14/083 ,  C01G31/02 ,  C23C14/0036 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  C23C14/58 ,  C23C14/5853 ,  H01B1/02

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

Abstract translation: 具有高耐温性（TCR）的氧化钒热敏膜材料在制备过程中含有作为掺杂剂的钇的稀土元素。 氧化钒热敏膜材料包括基底和掺杂钇的钒氧化物膜层。 钇掺杂钒氧化物膜层包括钒，氧和钇的三种元素，其中钇的原子浓度在1％-8％的范围内，钒的原子浓度在20-40％的范围内， 残留物是氧气。 制备具有高TCR的钒氧化物热敏膜材料的方法包括使用低浓度钇钒合金靶作为溅射源的反应性磁控管溅射法或使用包括高分子量的双靶的反应性磁控管共溅射法， 浓度钇钒合金靶和纯钒靶作为共溅射源。

公开(公告)号：US09425020B2

公开(公告)日：2016-08-23

申请号：US14572035

申请日：2014-12-16

Applicant: University of Electronic Science and Technology of China

Inventor： Zhaoyun Duan ,  Yanshuai Wang ,  Xiang Huang ,  Xinwu Ma ,  Tao Tang ,  Minzhi Huang ,  Zhanliang Wang ,  Yubin Gong

IPC: H01J23/24

CPC classification number: H01J23/24

Abstract: A miniaturized all-metal slow-wave structure includes: a circular metal waveguide; and metal electric resonance units provided in the circular metal waveguide; wherein the metal electric resonance unit provided in the circular metal waveguide includes a ring-shaped electric resonance metal plate with an electron beam tunnel provided on a center thereof, and a ring plate body of the ring-shaped electric resonance metal plate has two auricle-shaped through-holes symmetrically aside an axial-section; a main body of the auricle-shaped through-hole is a ring-shaped hole, two column holes extending towards a center of a circle are provided at two ends of the ring-shaped hole; the ring-shaped electric resonance metal plates are perpendicular to an axis and are provided inside the circular metal waveguide with equal intervals therebetween, external surfaces of the ring-shaped electric resonance metal plates are mounted on an internal surface of the circular metal waveguide.

公开(公告)号：US20160165689A1

公开(公告)日：2016-06-09

申请号：US14906493

申请日：2014-07-21

Applicant: SICHUAN SUNFOR LIGHT CO., LTD. ,  UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Dongming LI ,  Mian YANG ,  Zhengyong FENG ,  Wentao LONG ,  Ning NING ,  Dejun YU ,  Chunyi FENG ,  Yongming JIA

IPC: H05B33/08

CPC classification number: H05B33/0824 ,  H05B33/0809 ,  H05B33/083 ,  H05B33/0845 ,  H05B33/0887 ,  H05B33/089 ,  H05B33/0896

Abstract: An LED lighting drive circuit supplies power for N groups of LED loads. The LED lighting drive circuit comprises N current paths, N groups of LEDs, and a constant current section. The LED lighting drive circuit enables the current of LED lamps to change in a sinusoidal half-wave form with the utility AC input, and keeps the current a constant effective value.

Abstract translation: LED照明驱动电路为N组LED负载供电。 LED照明驱动电路包括N个电流路径，N组LED和恒定电流部分。 LED照明驱动电路使得LED灯的电流以公用交流输入的正弦半波形变化，并保持电流恒定的有效值。