公开(公告)号：US11462810B2

公开(公告)日：2022-10-04

申请号：US17194022

申请日：2021-03-05

Applicant: Intel Corporation

Inventor： Telesphor Kamgaing ,  Sasha Oster ,  Georgios Dogiamis ,  Johanna Swan

IPC: H01P5/08 ,  H01P1/207 ,  H01P3/12

Abstract: Embodiments of the invention include a mm-wave waveguide connector and methods of forming such devices. In an embodiment the mm-wave waveguide connector may include a plurality of mm-wave launcher portions, and a plurality of ridge based mm-wave filter portions each communicatively coupled to one of the mm-wave launcher portions. In an embodiment, the ridge based mm-wave filter portions each include a plurality of protrusions that define one or more resonant cavities. Additional embodiments may include a multiplexer portion communicatively coupled to the plurality of ridge based mm-wave filter portions and communicative coupled to a mm-wave waveguide bundle. In an embodiment the plurality of protrusions define resonant cavities with openings between 0.5 mm and 2.0 mm, the plurality of protrusions are spaced apart from each other by a spacing between 0.5 mm and 2.0 mm, and wherein the plurality of protrusions have a thickness between 200 μm and 1,000 μm.

公开(公告)号：US11430751B2

公开(公告)日：2022-08-30

申请号：US16465132

申请日：2016-12-30

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Georgios C. Dogiamis ,  Telesphor Kamgaing ,  Sasha N. Oster

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01L25/16 ,  H01Q1/22 ,  H01Q1/24 ,  H01Q1/52

Abstract: Embodiments of the invention include a microelectronic device that includes a first ultra thin substrate formed of organic dielectric material and conductive layers, a first mold material to integrate first radio frequency (RF) components with the first substrate, and a second ultra thin substrate being coupled to the first ultra thin substrate. The second ultra thin substrate formed of organic dielectric material and conductive layers. A second mold material integrates second radio frequency (RF) components with the second substrate.

公开(公告)号：US11387200B2

公开(公告)日：2022-07-12

申请号：US16827296

申请日：2020-03-23

Applicant: Intel Corporation

Inventor： Georgios C. Dogiamis ,  Telesphor Kamgaing ,  Javier A. Falcon ,  Yoshihiro Tomita ,  Vijay K. Nair

IPC: H01L23/66 ,  H01L23/00 ,  H01L25/18 ,  H01L25/065

Abstract: Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.

公开(公告)号：US11329359B2

公开(公告)日：2022-05-10

申请号：US16014036

申请日：2018-06-21

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Adel A. Elsherbini ,  Telesphor Kamgaing ,  Henning Braunisch ,  Johanna M. Swan

IPC: H01P3/16 ,  H01L23/66 ,  H01P11/00 ,  H04B10/2581

Abstract: Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.

公开(公告)号：US11310907B2

公开(公告)日：2022-04-19

申请号：US16697699

申请日：2019-11-27

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Aleksandar Aleksov ,  Feras Eid ,  Telesphor Kamgaing ,  Johanna M. Swan

IPC: H05K1/02 ,  H05K1/16 ,  H05K3/12 ,  H05K3/40 ,  H05K9/00

Abstract: Embodiments may relate to a microelectronic package or a die thereof which includes a die, logic, or subsystem coupled with a face of the substrate. An inductor may be positioned in the substrate. Electromagnetic interference (EMI) shield elements may be positioned within the substrate and surrounding the inductor. Other embodiments may be described or claimed.

公开(公告)号：US11244912B2

公开(公告)日：2022-02-08

申请号：US16481385

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Sai Vadlamani ,  Aleksandar Aleksov ,  Rahul Jain ,  Kyu Oh Lee ,  Kristof Kuwawi Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati ,  Telesphor Kamgaing

IPC: H01L21/48 ,  H01L23/66 ,  H01L23/498 ,  H01L23/00

Abstract: Semiconductor packages having a first layer interconnect portion that includes a coaxial interconnect between a die and a package substrate are described. In an example, the package substrate includes a substrate-side coaxial interconnect electrically connected to a signal line. The die is mounted on the package substrate and includes a die-side coaxial interconnect coupled to the substrate-side coaxial interconnect. The coaxial interconnects can be joined by a solder bond between respective central conductors and shield conductors.

公开(公告)号：US11227825B2

公开(公告)日：2022-01-18

申请号：US15773030

申请日：2015-12-21

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew J. Manusharow ,  Krishna Bharath ,  William J. Lambert ,  Robert L. Sankman ,  Aleksandar Aleksov ,  Brandon M. Rawlings ,  Feras Eid ,  Javier Soto Gonzalez ,  Meizi Jiao ,  Suddhasattwa Nad ,  Telesphor Kamgaing

IPC: H05K1/03 ,  H05K1/16 ,  H01F17/00 ,  H01F17/06 ,  H01L21/02 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/60 ,  G11B5/17 ,  G11B5/31 ,  G11B5/147 ,  G11B5/187 ,  H01L23/498 ,  H01F27/40 ,  H01L49/02 ,  H01F27/28 ,  H01F41/04 ,  H01G4/33 ,  H01L21/48 ,  H01L23/66

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.

公开(公告)号：US20210376437A1

公开(公告)日：2021-12-02

申请号：US17403571

申请日：2021-08-16

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Georgios C. Dogiamis ,  Telesphor Kamgaing ,  Sasha N. Oster ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Brandon M. Rawlings ,  Richard J. Dischler

IPC: H01P3/16 ,  H01P11/00 ,  H01P3/12 ,  H01Q9/04

Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.

公开(公告)号：US11095012B2

公开(公告)日：2021-08-17

申请号：US16329587

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Georgios C. Dogiamis ,  Telesphor Kamgaing ,  Sasha N. Oster ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Brandon M. Rawlings ,  Richard J. Dischler

IPC: H01P3/16 ,  H01P11/00 ,  H01P3/12 ,  H01Q9/04 ,  H04L29/08

Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.

公开(公告)号：US20210194459A1

公开(公告)日：2021-06-24

申请号：US16719077

申请日：2019-12-18

Applicant: Intel Corporation

Inventor： Hossein Alavi ,  Ibrahim Ban ,  Telesphor Kamgaing ,  Edris Mohammed ,  Han Wui Then ,  Kevin Obrien ,  Paul Fischer ,  Johanny Escobar Pelaez ,  Ved Gund

IPC: H03H9/54 ,  H03H9/64 ,  H03H9/25 ,  H03H9/58 ,  H03H9/205

Abstract: Techniques are disclosed implementing acoustic wave resonator (AWR) filter architectures to enable integrated solutions requiring significantly less passive components. The primary AWR filter topology leverages the use of parallel resonator branches, each having a relatively narrow bandwidth that may be combined to form an overall broadband filter response. This architecture may be further modified using electronically-controlled switching components to dynamically turn specific branches on or off to tune the filter, thus realizing a programmable broadband solution. Shunt resonators may also be added to the AWR filter topology, which may also be controlled with the use of electronically-controlled switching components to provide further control with respect to roll-off and the location and number of notch frequencies.