Abstract:
Disclosed herein is a jig for solder ball attachment capable of sensing whether missing balls occur by electrical sensing using an electrical sensor structure in which a conductive thin film is embedded in the jig and electrically sensing whether abnormal solder balls, for example, large ball/small ball/ball size are attached, without confirming whether abnormal solder balls, for example, large ball/small ball/ball size are attached by vision one by one, thereby shortening operating time and improving workability.
Abstract:
Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy.
Abstract:
According to a method for forming a UV patternable conductive polymer film, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer, and a UV-curable polymer resin may be used as a binder to form a conductive polymer film, the method including coating a mixed solution of a binder and an oxidant on a transparent substrate, synthesizing a conductive polymer by vapor-phase polymerization (VPP) on the coating to form a conductive polymer film and patterning the conductive polymer film with UV light. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs.
Abstract:
Disclosed herein is a jig for solder ball attachment capable of sensing whether missing balls occur by electrical sensing using an electrical sensor structure in which a conductive thin film is embedded in the jig and electrically sensing whether abnormal solder balls, for example, large ball/small ball/ball size are attached, without confirming whether abnormal solder balls, for example, large ball/small ball/ball size are attached by vision one by one, thereby shortening operating time and improving workability.
Abstract:
Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.
Abstract:
Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.
Abstract:
A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
Abstract:
An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
Abstract:
Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.
Abstract:
Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene.