METHOD FOR OPERATING INPUT MODE OF MOBILE TERMINAL COMPRISING A PLURALITY OF INPUT MEANS
    1.
    发明申请
    METHOD FOR OPERATING INPUT MODE OF MOBILE TERMINAL COMPRISING A PLURALITY OF INPUT MEANS 审中-公开
    包含多种输入方式的移动终端输入模式的方法

    公开(公告)号:US20100302170A1

    公开(公告)日:2010-12-02

    申请号:US12789506

    申请日:2010-05-28

    CPC classification number: G06F1/1624 G06F3/0233

    Abstract: A method of operating an input mode of a mobile terminal having a first input means and a second input means is provided. The method includes: displaying an input screen which is set as a first input mode; determining whether the second input means is in an activated state; and displaying a changed input screen which is set as a second input mode when the second input means is determined to be in an activated state.

    Abstract translation: 提供一种操作具有第一输入装置和第二输入装置的移动终端的输入模式的方法。 该方法包括:显示被设置为第一输入模式的输入屏幕; 确定所述第二输入装置是否处于激活状态; 以及当确定所述第二输入装置处于激活状态时,显示被设置为第二输入模式的改变的输入屏幕。

    APPARATUS AND METHOD FOR CONVERTING ENERGY
    2.
    发明申请
    APPARATUS AND METHOD FOR CONVERTING ENERGY 有权
    用于转换能量的装置和方法

    公开(公告)号:US20100066208A1

    公开(公告)日:2010-03-18

    申请号:US12372369

    申请日:2009-02-17

    Abstract: Exemplary embodiments relate to an energy converting apparatus and a method for converting energy, which may convert energy of an applied signal into electrical energy. The energy converting apparatus may include at least one nanowire which resonates in response to the applied signal. The resonating nanowire may contact an electrode allowing a current to flow through the electrode and the nanowire by a Schottky contact between the electrode and the nanowire. The method for converting energy may include applying a signal to at least one nanowire to resonate the nanowire, and generating electrical energy through the contact between the resonating nanowire and an electrode.

    Abstract translation: 示例性实施例涉及能量转换装置和用于转换能量的方法,其可以将施加的信号的能量转换成电能。 能量转换装置可以包括响应于所施加的信号而谐振的至少一个纳米线。 谐振纳米线可以接触允许电流通过电极和纳米线之间的肖特基接触流过电极和纳米线的电极。 用于转换能量的方法可以包括将信号施加到至少一个纳米线以共振纳米线,以及通过谐振纳米线和电极之间的接触产生电能。

    JIG FOR ROUND SOLDER BALL ATTACHMENT

    公开(公告)号:US20120085810A1

    公开(公告)日:2012-04-12

    申请号:US13233710

    申请日:2011-09-15

    Applicant: Sang Yoon LEE

    Inventor: Sang Yoon LEE

    CPC classification number: B23K3/0623

    Abstract: Disclosed herein is a jig for solder ball attachment capable of sensing whether missing balls occur by electrical sensing using an electrical sensor structure in which a conductive thin film is embedded in the jig and electrically sensing whether abnormal solder balls, for example, large ball/small ball/ball size are attached, without confirming whether abnormal solder balls, for example, large ball/small ball/ball size are attached by vision one by one, thereby shortening operating time and improving workability.

    Abstract translation: 本发明公开了一种用于焊球附着的夹具,其能够使用其中导电薄膜嵌入夹具中的电传感器结构通过电感测来检测是否发生缺失球,并且电感测异常焊球是否例如大球/小 附着球/球尺寸,无需确认异常焊球,例如大球/小球/球尺寸是否一个接一个地通过视觉附着,从而缩短操作时间并提高可操作性。

    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机薄膜晶体管及其制造方法

    公开(公告)号:US20120083069A1

    公开(公告)日:2012-04-05

    申请号:US13314633

    申请日:2011-12-08

    CPC classification number: H01L51/0512 H01L51/0012 H01L51/0037 H01L51/0529

    Abstract: Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.

    Abstract translation: 公开了一种有机薄膜晶体管及其制造方法,其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。 有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善,从而改善了器件的电性能 。

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