Abstract:
An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.
Abstract translation:提供了一种有源矩阵寻址LCD器件,其具有形成有导电线的有源矩阵基板,其抑制了AI小丘,而不会使线的结构复杂化,并且降低了线路端子处的电连接电阻增加,从而改善了 连接可靠性。 该器件包括具有透明电介质板,布置在板上的薄膜晶体管(TFT)和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子%以上。 Al文件可以用Al合金代替。
Abstract:
Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
Abstract:
A display unit includes a display panel having a display screen on which images are displayed, and (b) a touch panel covering the display screen therewith and detecting a touch thereto made by a user. The touch panel detects the touch in accordance with touch-panel drive signals input thereto. The display panel displays images in accordance with display-drive signals input thereto. The touch panel is switched between a first condition in which the touch-panel drive signals are input into the touch panel and a second condition in which the touch panel is electrically open.
Abstract:
Off-leak current of a TFT, required for a drive circuit configured with a TFT of a single conductivity type, is realized with simple manufacturing steps. The impurity concentration of a source region and a drain region of a TFT is set between 2*1018 cm−3 and 2*1019 cm−3, whereby off-leak current of the TFT can be sufficiently reduced even in a single gate structure.
Abstract:
Disclosed are an exposure mask capable of improving uniformity of a resist film thickness of a half film thickness part and reducing a display defect to increase a manufacturing yield, a method of manufacturing a TFT substrate using the exposure mask and a liquid crystal display comprising the TFT substrate manufactured by the method and having no display defect. The exposure mask includes a light-shielding pattern on a transparent substrate in which a gray-tone area is provided to at least a part of the light-shielding pattern, the gray-tone area having an oblong light-shielding pattern having a width of a submarginal resolution of an exposure apparatus and sandwiched between oblong slit-type transmissive patterns having a width of the submarginal resolution, and a light-shielding rate of the gray-tone area is gradually reduced toward a center of the oblong light-shielding pattern from longitudinal ends thereof.
Abstract:
A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.
Abstract translation:提供了由微晶硅薄膜和金属薄膜构成的层叠布线,其能够抑制微晶硅薄膜和金属薄膜之间的过度的硅化物形成反应,从而防止薄膜的剥离。 在使用层叠布线的多晶硅TFT(Thin Film Transistor,多晶硅TFT)中,微晶硅薄膜的结构使得其晶粒各自具有薄膜厚度为60%的微晶硅薄膜的长度, 微晶硅薄膜的膜厚更多为15个以下的晶粒总数,或者其晶粒尺寸为50%以下,每个微晶硅薄膜的长度均为50%以下 的微晶硅薄膜的膜厚的总和为构成微晶硅薄膜的晶粒总数的85%以上。
Abstract:
A method for forming a thin-film transistor on an insulating substrate includes the steps of: forming a non-single-crystal semiconductor thin film on the insulating substrate; forming a gate insulating film on the non-single-crystal semiconductor thin film; forming a gate electrode including a lower gate electrode and an upper gate electrode on the gate insulating film, the lower gate electrode having a portion that is not covered by the upper gate electrode; forming a source-drain region and an LDD (lightly doped drain) region in the non-single-crystal thin film semiconductor film concurrently by introducing an impurity into the non-single-crystal semiconductor thin film through the gate electrode and the gate insulating film; and etching away an exposed portion of the lower gate electrode by using the upper gate electrode as a mask.
Abstract:
Disclosed is a method of manufacturing a liquid crystal display device using a liquid crystal dispensation alignment method which includes steps of: removing inorganic ions and the like by performing a vacuum drying process on substrates after cleaning alignment layers on which a rubbing process has been performed; and removing foreign objects by performing any one of a process for sucking up foreign objects by use of a nozzle having a specialized shape and a process for blasting a gas to which ultrasonic waves have been applied against the foreign objects, before liquid crystal is dispensed. In addition, a temperature at which sealing material is cured completely is lowered in order to inhibit activation (migration) of organic matters and to thereby reduce visible defects such as alignment bright defects.
Abstract:
A liquid crystal display is fabricated which has bus wires disposed in a grid shape, switching elements coupled to the bus wires, and pixel electrodes which are disposed on an interlayer insulating film formed by coating and which are coupled with the switching elements. In fabricating the liquid crystal display, when a transparent conductive film is formed on the interlayer insulating film which is formed by coating, the temperature of the substrate is controlled to become 100° C.-170° C. In another embodiment, when the transparent conductive film is formed on the interlayer insulating film in a non-heated condition, an oxygen flow rate ratio is set to 1% or lower, and annealing is performed after forming the film. Thereby, when etching the ITO film on the interlayer insulating film, etching residue is not produced. Further, contact resistance between the ITO film and the lower layer metal can be uniformly decreased, and display defects can be obviated.
Abstract:
A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.