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公开(公告)号：US07663146B2
公开(公告)日：2010-02-16
申请号：US10028778
申请日：2001-12-28
IPC分类号： G02F1/1343
CPC分类号： H01L29/4908 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458
摘要： An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.
摘要翻译： 提供了一种有源矩阵寻址LCD器件，其具有形成有导电线的有源矩阵基板，其抑制了AI小丘，而不会使线的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al文件可以用Al合金代替。
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公开(公告)号：US06890783B2
公开(公告)日：2005-05-10
申请号：US10242011
申请日：2002-09-12
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/00 , H01L21/3205 , H01L21/336 , H01L21/84 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/036
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极， 通过蚀刻除去沟道间隙的+非晶硅层。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。
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3.发明授权公开(公告)号：US06632696B2
公开(公告)日：2003-10-14
申请号：US09745657
申请日：2000-12-20
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： H01L2100
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤
1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。 -
公开(公告)号：US20070013852A1
公开(公告)日：2007-01-18
申请号：US11523612
申请日：2006-09-20
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译： 显示部分被扫描线和信号线划分成设置像素的部分。 对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。
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公开(公告)号：US20050227399A1
公开(公告)日：2005-10-13
申请号：US11133315
申请日：2005-05-20
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/146 , H01L29/15 , H01L21/00 , H01L29/04
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2202/104 , H01L27/124 , H01L27/1248 , H01L27/14621
摘要： The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.
摘要翻译： 制造液晶显示装置的方法包括以下步骤：（a）在基板上制造开关装置，（b）在基板上形成层间绝缘膜，使得开关装置被层间绝缘膜覆盖，以及（ c）在层间绝缘膜上形成透明电极，透明电极通过层间绝缘膜与开关器件电连接，步骤（c）包括（c1）在层间绝缘膜上沉积导电，透明和非晶材料 ，（c2）将材料图案化成透明电极，（c3）通过在形成取向膜之后进行的热退火将透明电极转换成多晶硅。
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公开(公告)号：US07609350B2
公开(公告)日：2009-10-27
申请号：US11523612
申请日：2006-09-20
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译： 显示部分被扫描线和信号线划分成设置像素的部分。 对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。
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7.发明授权Liquid crystal display with superposed contact holes and method of manufacturing the same 有权具有叠加接触孔的液晶显示器及其制造方法公开(公告)号：US07130009B2
公开(公告)日：2006-10-31
申请号：US10661543
申请日：2003-09-15
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译： 显示部分被扫描线和信号线划分成设置像素的部分。 对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。
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公开(公告)号：US20070013853A1
公开(公告)日：2007-01-18
申请号：US11523616
申请日：2006-09-20
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译： 显示部分被扫描线和信号线划分成设置像素的部分。 对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。
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公开(公告)号：US07046314B2
公开(公告)日：2006-05-16
申请号：US11133363
申请日：2005-05-20
IPC分类号： G02F1/1333
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2202/104 , H01L27/124 , H01L27/1248 , H01L27/14621
摘要： The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.
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公开(公告)号：US20050250260A1
公开(公告)日：2005-11-10
申请号：US11133363
申请日：2005-05-20
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/146 , H01L29/15
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2202/104 , H01L27/124 , H01L27/1248 , H01L27/14621
摘要： The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.
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