Abstract:
The present invention relates to an electric heating element. The electric heating element includes a core support, an inner wire wound around the core support, an intermediate dielectric layer formed around the inner wire, an outer wire wound around the intermediate dielectric layer, a connector connecting an end of the inner wire to an end of the outer wire, and an outer sheath formed around the outer wire, wherein the inner wire and outer wire are arranged to have opposite phases according to a direction of a current to attenuate magnetic fields generated from the inner wire and outer wire when a power is applied to the to inner wire and outer wire.
Abstract:
A memory system has first and second primary memories and first and second secondary memories coupled to the first and second primary memories, respectively, the coupling comprising at least one point-to-point connection. A memory module includes at least two of the first and second primary and first and second secondary memories. A first connection element, such as a connector or solder, connects the memory module to a mother board. A second connection element, such as a connector or solder, connects at least one other of the first and second primary and first and second secondary memories to the mother board. At least one of the memories on the first memory module is coupled to at least one of the other memories. The memory system also includes a memory controller which is connected to the primary memories by a point-to-two-point link.
Abstract:
A method and apparatus for providing a mobile service with the use of a code pattern is disclosed In one embodiment, the method comprising: taking a photograph of a code pattern image, decoding the photographed code pattern image so as to obtain code information, extracting uniform resourse locator (URL) information corresponding to the code information, transmitting a content information request message to a service provider server corresponding to the URL information, and receiving content information corresponding to the URL information from the service provider server. According to embodiments of the present invention, it is possible to provide various and convenient mobile services to mobile terminal users using a mobile terminal, having a camera, and a code pattern containing the URL information.
Abstract:
A delay locked loop (DLL) circuit for a synchronous semiconductor memory device which can control a delay time of a feedback loop within the DLL circuit according to the magnitude of an external load, and a method of generating information about a load connected to a data pin of a synchronous semiconductor memory device are provided. The DLL circuit includes a replica output driver delaying an internal clock signal by a first delay time to output a first internal clock signal, the first delay time is a delay time of the internal clock signal which is generated by an output driver when a first load of a first magnitude is connected to an output terminal of the output driver, and a transfer/delay circuit transferring the first delay internal clock signal to a phase detector as a second delay internal clock signal when the first load is connected to the output terminal, and outputting the second delay internal clock signal to the phase detector by delaying the first delay internal clock signal by a second delay time, the second delay time is a delay time of the internal clock signal which is generated by the output driver when a second load of a second magnitude, which is larger than the first magnitude, is connected to the output terminal.
Abstract:
A fixing unit, and an image forming apparatus having the fixing unit. The fixing unit includes a heat roller including a heat source therein, one or more pressing rollers in close contact with the heat roller, an elastic body to elastically apply pressure on both ends of the one or more pressing rollers with respect to the heat roller, a backup member to contact a central portion of the one or more pressing rollers and to apply pressure to the central portion in a longitudinal direction of the one or more pressing rollers, and a backup elastic body to elastically press the backup member towards the heat roller.
Abstract:
A gamma voltage generator for a liquid crystal display (LCD) capable of removing residual images by compensating a gamma voltage is presented. The gamma voltage generation apparatus adjusts the common voltage by the kickback voltage for the intermediate gray level, and tunes the gamma voltages other than the intermediate gray level gamma voltage. The adjustment of the gamma voltages other than the intermediate gray level gamma voltage is achieved in such a manner that the difference between the intermediate gray level kickback voltage and the kickback voltage at one of the gray levels other than the intermediate gray level is equal to half of the difference between the sum of the two inverted gamma voltages representing the intermediate gray level gamma voltages and the sum of the two inverted gamma voltages corresponding to the selected gray level.
Abstract:
A memory system has first and second primary memories and first and second secondary memories coupled to the first and second primary memories, respectively, the coupling comprising at least one point-to-point connection. A memory module includes at least two of the first and second primary and first and second secondary memories. A first connection element, such as a connector or solder, connects the memory module to a mother board. A second connection element, such as a connector or solder, connects at least one other of the first and second primary and first and second secondary memories to the mother board. At least one of the memories on the first memory module is coupled to at least one of the other memories. The memory system also includes a memory controller which is connected to the primary memories by a point-to-two-point link.
Abstract:
In a method for forming a semiconductor device, a device isolation layer is formed in a capacitor region of a silicon substrate, and a bottom electrode and a dielectric layer are formed on the device isolation layer. Insulation sidewalls are formed on both sides of the bottom electrode. A top electrode is formed on the dielectric layer, and simultaneously a gate electrode is formed in a transistor region of the silicon substrate. Source/drain impurity regions are formed in the silicon substrate at both sides of the gate electrode.