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公开(公告)号:US20220352304A1
公开(公告)日:2022-11-03
申请号:US17351267
申请日:2021-06-18
Inventor: Ming QIAO , Shuhao ZHANG , Zhangyi'an YUAN , Dican HOU , Bo ZHANG
Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.
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公开(公告)号:US11410819B2
公开(公告)日:2022-08-09
申请号:US17065444
申请日:2020-10-07
Inventor: Jing Jiang , Zhipeng Li , Xinrui He , Yalin Hu , Yi Niu , Ting Zhou , Chao Wang
Abstract: A method for preparing a supercapacitor electrode material Ni doped CoP3/Ni foam is provided, and the CoP3 is applied to the supercapacitor for the first time. The method belongs to a technical field of synthesis and preparation of supercapacitor materials. The present invention adopts a low-temperature phosphating process to prepare the Ni-doped CoP3/foamed nickel as the electrode material of the supercapacitor, so as to provide advantages such as simple synthesis process, easy control, low cost and high specific capacity. The supercapacitor electrode material Ni doped CoP3/Ni foam prepared by the present invention has a hierarchical structure and a large specific surface area, which is beneficial to shorten an ion transmission path, reduce an interface resistance between the electrode material and electrolyte, provide more active sites, and provide a higher specific capacity in alkaline electrolyte. The electrode material shows great potential in electrochemical energy storage.
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273.
公开(公告)号:US20220237766A1
公开(公告)日:2022-07-28
申请号:US17719888
申请日:2022-04-13
Inventor: Jing Jiang , Yi Niu , Chao Wang , Peifeng Yu , Zezhan Zhang , Shan Gao
Abstract: A measurement and reconstruction method for a turbine blade strain field of with integrates an imaging technology and an infrared photoelectric measurement technology. The imaging technology is mainly responsible for the measurement of the strain field on a target blade surface, so as to use a digital image processing technology to obtain blade strain field data. The infrared photoelectric measurement technology is mainly aimed at the strain at blade edges, which uses temperature difference between the blade edges and blade gaps to perform strain measurement. Measurement results of the two modes are finally converted into blade strain parameters, thereby reconstructing the target blade strain field based on host computer software.
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公开(公告)号:US11388444B2
公开(公告)日:2022-07-12
申请号:US17458648
申请日:2021-08-27
Inventor: Ce Zhu , Lingling Deng , Ni Jiang , Qiuyue Wang , Keke Ding
IPC: H04N19/82 , H04N19/117 , H04N19/182
Abstract: A loop filtering method based on an adaptive self-guided filtering is mainly an adaptive self-guided filtering technology considering local structure information of an image, wherein a regularization coefficient is adjusted by calculating a weight coefficient of the regularization coefficient to realize the adaptive self-guide filtering, and then a region-level subspace mapping iterative optimization implemented on each region enables a mapping result of the each region to be optimal, wherein the mapping result of a whole image is closer to an original image. Beneficial effects of the loop filtering method are as follows: a filtering effect of a loop filtering is improved, a distortion effect of a reconstruction image is reduced and a reconstruction quality of a video frame is improved, wherein the reconstruction image is more favorable for a subsequent reference and a subjective and objective quality of the video is further improved.
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公开(公告)号:US11381115B2
公开(公告)日:2022-07-05
申请号:US17209310
申请日:2021-03-23
Inventor: Xianzheng Zong , Zaiping Nie , Wen Xiong , Jun Hu , Shiwen Yang , Xuyu Ye , Xiaofeng Que , Yongpin Chen
Abstract: The disclosure provides a wireless charging device including a metal frequency-selective box and an internal charging system disposed inside the metal frequency-selective box for wireless charging. The internal charging system includes a multi-antenna subsystem including N antenna units; N is an integer greater than 2, and the antenna units are dipole antennas, microstrip patch antennas, microstrip slot antennas, helical antennas, or dielectric resonator antennas. The N antenna units are evenly disposed, in a two-dimensional ring, on inner sides of four side faces of the metal frequency-selective box, or disposed on a three-dimensional curved surface of the entire inner side of the metal frequency-selective box. The device to be energized is disposed in the metal frequency-selective box and is surrounded by the N antenna units.
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276.
公开(公告)号:US11366152B2
公开(公告)日:2022-06-21
申请号:US16666428
申请日:2019-10-29
Inventor: Dong Liu , Yan Yan , Xiaoting Xiao , Bin Gao , Guiyun Tian
Abstract: A method for measuring equivalent circuit parameters and resonant frequency of a piezoelectric resonator, by which the phase-frequency curve of the piezoelectric resonator is measured, and the resonant frequency and the anti-resonant frequency are obtained. Then, the slopes of the phase-frequency curve at the resonant frequency and the anti-resonant frequency are respectively measured. The resonant angular frequency and the anti-resonant angular frequency are also calculated. Finally, the equivalent circuit parameters of the piezoelectric resonator are obtained by solving a system of nonlinear equations.
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277.
公开(公告)号:US20220182593A1
公开(公告)日:2022-06-09
申请号:US17680390
申请日:2022-02-25
Inventor: Chun YIN , Yuhua CHENG , Zeqi WANG , Xutong TAN , Kai CHEN , Gen QIU , Jianhao LUO , Junjie LIU , Zhibo LI , Aolin YANG
IPC: H04N13/15 , H04N13/239 , H04N13/254 , H04N13/246 , G06T7/33
Abstract: A method for high-precision true color three dimensional reconstruction of mechanical component. Firstly performs image acquisition: the left and right high-resolution grayscale cameras are fixed at same height and spaced at certain distance, an optical transmitter fixed between the two grayscale cameras, and low-resolution color camera fixed above optical transmitter, thus images of measured high-precision mechanical component are shot. Then performs image processing: all images are transmitted to a computer, which uses image processing to record surface information of measured high-precision mechanical component in the point cloud by high-precision true color three-dimensional reconstruction, which reflects color texture information of the surface, so as to realize the non-contact high-precision true color three dimensional reconstruction of high-precision mechanical component. The method uses binocular high-precision grayscale cameras instead of binocular color cameras, which broadens the range of capture wavelengths, retains richer texture details of high-precision mechanical component and improves accuracy of measurement.
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公开(公告)号:US11356110B1
公开(公告)日:2022-06-07
申请号:US17328716
申请日:2021-05-24
Inventor: Hua Fan , Xiaohu Qi , Qianqian Deng , Quanyuan Feng , Shaoqing Lu , Huaying Su , Guosong Wang
Abstract: A voltage-to-time converter (VTC) for a time-domain analog-to-digital converter is disclosed, which provides a time-domain analog-to-digital converter (T-ADC) with low power consumption and high precision. By combining the advantages of current-starving technology, current mirror technology, and body biasing technology, compared with the traditional structure, the VTC and T-ADC achieve excellent performance, such as low power consumption, high linearity, wide input dynamic range, and strong anti-interference to PVT variations. Compared with the traditional voltage-to-time converter, the disclosed voltage-to-time converter has a wider input dynamic range and higher linearity. The input voltage is connected to transistors in the circuit as a body bias, resulting in a very small body current, and no apparent increase in power consumption. The design of a low-power voltage-to-time converter is realized.
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279.
公开(公告)号:US11343719B2
公开(公告)日:2022-05-24
申请号:US16756128
申请日:2018-10-18
Inventor: Guolin Sun , Kun Xiong
Abstract: A method for reserving and allocating resources for an ultra-low-latency uplink service flow based on an air interface slice includes: virtualizing an air interface resource of a base station side into an ultra-low-latency slice resource and a non-ultra-low-latency slice resource; recording a collision situation on reserved resources in each retry window, and dynamically adjusting a size of the reserved ultra-low-latency slice resource; after detecting that a terminal transmits ultra-low-latency data on the ultra-low-latency slice resource, performing a resource reallocation and determining whether an idle resource is presented; if presented, allocating the idle resource to the terminal transmitting the ultra-low-latency data and returning the borrowed non-ultra-low-latency slice resource after transmitting the ultra-low-latency data; and if not presented, borrowing the non-ultra-low-latency slice resource allocated to a non-ultra-low-latency terminal and returning the borrowed non-ultra-low-latency slice resource after transmitting the ultra-low-latency data.
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公开(公告)号:US20220149198A1
公开(公告)日:2022-05-12
申请号:US17367573
申请日:2021-07-05
Inventor: Ping LI , Yongbo LIAO , Xianghe ZENG , Yaosen LI , Ke FENG , Chenxi PENG , Zhaoxi HU , Fan LIN , Xuanlin XIONG , Tao HE
IPC: H01L29/78 , H01L29/10 , H01L29/417
Abstract: A nano-wall integrated circuit structure with high integration density is disclosed, which relates to the fields of microelectronic technology and integrated circuits (IC). Based on the different device physical principles with MOSFETs in traditional ICs, the nano-wall integrated circuit unit structure (Nano-Wall FET, referred to as NWaFET) with high integration density can improve the integration of the IC, significantly shorten the channel length, improve the flexibility of the device channel width-to-length ratio adjustment, and save chip area.
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