公开(公告)号：US20230079244A1

公开(公告)日：2023-03-16

申请号：US17949436

申请日：2022-09-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/108 ,  H01L29/24 ,  H01L29/786

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US20220285556A1

公开(公告)日：2022-09-08

申请号：US17749363

申请日：2022-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20210305432A1

公开(公告)日：2021-09-30

申请号：US17345546

申请日：2021-06-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Keitaro IMAI

IPC: H01L29/786 ,  H01L27/06 ,  H01L27/12

Abstract: An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer.

公开(公告)号：US20210304643A1

公开(公告)日：2021-09-30

申请号：US17346348

申请日：2021-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshiyuki ISA ,  Akio ENDO ,  Yosuke TSUKAMOTO ,  Jun KOYAMA

IPC: G09F9/30 ,  G06F1/16

Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.

公开(公告)号：US20210233484A1

公开(公告)日：2021-07-29

申请号：US17153975

申请日：2021-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Atsushi UMEZAKI

IPC: G09G3/36 ,  H03K19/00 ,  H03K19/0185 ,  H03K17/687 ,  H01L27/12 ,  H01L27/02 ,  H01L29/786 ,  G11C19/00

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

公开(公告)号：US20210216158A1

公开(公告)日：2021-07-15

申请号：US17123218

申请日：2020-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F3/041 ,  G06F1/3234 ,  G06F3/044 ,  G06F3/045 ,  G09G3/36 ,  G02F1/1333

Abstract: It is an object to provide a semiconductor display device having a touch panel, which can reduce power consumption. The semiconductor display device includes a panel which is provided with a pixel portion and a driver circuit which controls an input of the image signal to the pixel portion, and a touch panel provided in a position overlapping with the panel in the pixel portion. The pixel portion includes a display element configured to perform display in accordance with voltage of the image signal to be input, and a transistor configured to control retention of the voltage. The transistor includes an oxide semiconductor in a channel formation region. The driving frequency of the driver circuit, that is, the number of writing operations of the image signal for a certain period is changed in accordance with an operation signal from a touch panel.

公开(公告)号：US20210210519A1

公开(公告)日：2021-07-08

申请号：US17206906

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H01L29/786 ,  H01L33/02 ,  H04R1/02 ,  H01L29/36 ,  H01L27/15 ,  H01L27/32 ,  H01L29/24 ,  H04M1/02

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20210208434A1

公开(公告)日：2021-07-08

申请号：US17209556

申请日：2021-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu KONDO ,  Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/45 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  G09G3/36

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US20210169328A1

公开(公告)日：2021-06-10

申请号：US17177240

申请日：2021-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: A61B5/00 ,  H04B13/00 ,  H01L23/60 ,  A61B5/07 ,  H05K7/00 ,  H01L27/13 ,  H05K1/11 ,  H04B1/16 ,  G16H40/67 ,  H01L23/66 ,  G16H40/63

Abstract: A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

公开(公告)号：US20210072793A1

公开(公告)日：2021-03-11

申请号：US16953511

申请日：2020-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G06F1/16 ,  H01L29/786 ,  G11C5/06 ,  G06F1/26

Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.