公开(公告)号：US10811303B2

公开(公告)日：2020-10-20

申请号：US16259175

申请日：2019-01-28

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US10745282B2

公开(公告)日：2020-08-18

申请号：US16002222

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C01B32/28 ,  H01L21/308 ,  C01B32/26 ,  H01L21/311 ,  C01B32/25 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505

Abstract: Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

公开(公告)号：US20200243382A1

公开(公告)日：2020-07-30

申请号：US16848754

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/3213 ,  H01L27/11582 ,  H01L23/532 ,  H01L21/02 ,  H01L21/285 ,  H01L27/11556 ,  H01L23/528 ,  H01L21/311

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10699952B2

公开(公告)日：2020-06-30

申请号：US16394731

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/762 ,  H01L21/3213 ,  H01L21/266

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US10699903B2

公开(公告)日：2020-06-30

申请号：US16659194

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Rui Cheng ,  Abhijit Basu Mallick

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/762 ,  H01L29/06

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20200168503A1

公开(公告)日：2020-05-28

申请号：US16690652

申请日：2019-11-21

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: Methods of depositing a carbon film are discussed. Some embodiments selectively deposit a carbon film on a metal surface over a dielectric surface. Some embodiments form carbon pillars on metal surfaces selectively over dielectric surfaces. Some embodiments utilize carbon pillars in forming self-aligned vias.

公开(公告)号：US10600684B2

公开(公告)日：2020-03-24

申请号：US16224337

申请日：2018-12-18

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/324

Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.

公开(公告)号：US10529585B2

公开(公告)日：2020-01-07

申请号：US15995698

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick ,  Kurtis Leschkies

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/38 ,  C23C16/32 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

公开(公告)号：US20190385845A1

公开(公告)日：2019-12-19

申请号：US16433101

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Methods for depositing an amorphous carbon layer on a substrate are described. A substrate is exposed to a carbon precursor having a structure of Formula (I). Also described are methods of etching a substrate, including forming an amorphous carbon hard mask on a substrate by exposing the substrate to a carbon precursor having the structure of Formula (I).

公开(公告)号：US20190330736A1

公开(公告)日：2019-10-31

申请号：US16397155

申请日：2019-04-29

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/34 ,  C23C16/455 ,  H01L45/00

Abstract: Methods of depositing a silicon nitride film at low temperatures are discussed. The silicon nitride films of some embodiments are highly conformal, have low etch rates, low atomic oxygen concentrations and/or good hermeticity. The films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize an ALD process comprising a nitrogen precursor, a silicon precursor and a plasma treatment in each cycle. Some embodiments perform the plasma treatment at a lower pressure than the precursor exposures.