公开(公告)号：US20200335628A1

公开(公告)日：2020-10-22

申请号：US16919441

申请日：2020-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20200185530A1

公开(公告)日：2020-06-11

申请号：US16789872

申请日：2020-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20200111913A1

公开(公告)日：2020-04-09

申请号：US16600375

申请日：2019-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/66 ,  H01L21/768 ,  H01L21/324 ,  H01L21/02 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20200081283A1

公开(公告)日：2020-03-12

申请号：US16681168

申请日：2019-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshikazu KONDO ,  Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/1333 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45

Abstract: An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US20190386036A1

公开(公告)日：2019-12-19

申请号：US16547723

申请日：2019-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US20190312063A1

公开(公告)日：2019-10-10

申请号：US16435966

申请日：2019-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H04R1/02 ,  H01L33/02 ,  H04M1/02 ,  H01L27/15 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/36

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20190295480A1

公开(公告)日：2019-09-26

申请号：US16435618

申请日：2019-06-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA

IPC: G09G3/36 ,  G02F1/1368 ,  G02F1/1335

Abstract: To provide a liquid crystal display device which can perform image display in both modes: a reflective mode where external light is used as an illumination light source; and a transmissive mode where a backlight is used. In one pixel, a region where incident light through a liquid crystal layer is reflected to perform display (reflective region) and a region through which light from the backlight passes to perform display (transmissive region) are provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. In addition, two transistors connected to respective pixel electrode layers are provided in one pixel, and the two transistors are separately operated, whereby display of the reflective region and display of the transmissive region can be controlled independently.

公开(公告)号：US20190252416A1

公开(公告)日：2019-08-15

申请号：US16391877

申请日：2019-04-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/04 ,  G09G3/20 ,  H01L29/45 ,  G11C19/28 ,  H01L29/10 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/1229 ,  G09G3/20 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/42372 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US20190237483A1

公开(公告)日：2019-08-01

申请号：US16375918

申请日：2019-04-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei TOYOTAKA ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  G11C19/28 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3258 ,  G09G3/3233 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1337 ,  G02F1/1334

CPC classification number: H01L27/124 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0626 ,  G09G2330/021 ,  G11C19/28 ,  G11C19/287 ,  H01L27/1225 ,  H01L29/7869

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US20190012960A1

公开(公告)日：2019-01-10

申请号：US16130447

申请日：2018-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/3208 ,  H01L27/32 ,  G09G3/20 ,  H01L27/12 ,  H01L29/786 ,  G09G3/3233

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.