Adaptive signaling for network performance measurement, access, and control
    22.
    发明授权
    Adaptive signaling for network performance measurement, access, and control 有权
    用于网络性能测量,访问和控制的自适应信令

    公开(公告)号:US08976676B2

    公开(公告)日:2015-03-10

    申请号:US13437910

    申请日:2012-04-02

    IPC分类号: H04W24/00 H04W24/10 H04W24/08

    摘要: Systems and methods are provided for initiation, use, access, and control of functionality of a network. In one aspect, the systems and methods can be utilized to generate information defining signaling or control performance and operational characteristics associated with the functionality in a variety of network environments. In another aspect, based on such information, adaptive signaling can be utilized to monitor, analyze and detect specific signaling signatures associated with the functionality. Managing signaling or control messages in response to information collected by monitoring and analyzing the adaptive signaling permits originating or requesting the functionality without conventional operation of a network component.

    摘要翻译: 提供系统和方法用于启动,使用,访问和控制网络的功能。 在一个方面,系统和方法可用于产生定义信令或控制性能的信息,以及与各种网络环境中的功能相关联的操作特性。 在另一方面,基于这样的信息,可以利用自适应信令来监视,分析和检测与功能相关联的特定信令签名。 响应于通过监视和分析自适应信令收集的信息来管理信令或控制消息,允许始发或请求功能,而不需要网络组件的常规操作。

    SEMICONDUCTOR PHOTONIC DEVICES WITH ENHANCED RESPONSIVITY AND REDUCED STRAY LIGHT
    25.
    发明申请
    SEMICONDUCTOR PHOTONIC DEVICES WITH ENHANCED RESPONSIVITY AND REDUCED STRAY LIGHT 审中-公开
    具有增强响应和降低光束的半导体光电器件

    公开(公告)号:US20100044823A1

    公开(公告)日:2010-02-25

    申请号:US12610522

    申请日:2009-11-02

    IPC分类号: H01L31/10

    摘要: In accordance with the invention, a photonic device comprises a semiconductor substrate including at least one circuit component comprising a metal silicide layer and an overlying layer including at least one photoresponsive component. The metal silicide layer is disposed between the circuit component and the photoresponsive component to prevent entry into the circuit component of light that penetrates the photoresponsive component. The silicide layer advantageously reflects the light back into the photoresponsive element. In addition, the overlying layer can include one or more reflective layers to reduce entry of oblique light into the photoresponsive component. In an advantageous embodiment, the substrate comprises single-crystal silicon including one or more insulated gate field effect transistors (IGFETs), and/or capacitors, and the photoresponsive element comprises germanium and/or germanium alloy epitaxially grown from seeds on the silicon. The metal silicide layer can comprise the gate of the IGFET and/or an electrode of the capacitor.

    摘要翻译: 根据本发明,光子器件包括半导体衬底,其包括至少一个包括金属硅化物层的电路部件和包括至少一个光响应部件的上覆层。 金属硅化物层设置在电路部件和光响应部件之间,以防止进入穿过光响应部件的光的电路部件。 硅化物层有利地将光反射回光响应元件。 此外,上覆层可以包括一个或多个反射层,以减少斜光进入光响应部件。 在有利的实施例中,衬底包括包括一个或多个绝缘栅场效应晶体管(IGFET)和/或电容器的单晶硅,并且光响应元件包括从硅上的种子外延生长的锗和/或锗合金。 金属硅化物层可以包括IGFET的栅极和/或电容器的电极。

    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY
    26.
    发明申请
    IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY 有权
    包含与硅衬底和硅电路集成的隔离锗光电子的图像传感器

    公开(公告)号:US20090072284A1

    公开(公告)日:2009-03-19

    申请号:US12271601

    申请日:2008-11-14

    IPC分类号: H01L31/112 H01L31/028

    摘要: In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.

    摘要翻译: 根据本发明,改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地,锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度,锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此,锗元素通过外延生长与硅集成到一起,并通过公共金属层与硅电路集成。

    Cushion and trim cover for contoured cushion presenting seat
    27.
    发明申请
    Cushion and trim cover for contoured cushion presenting seat 审中-公开
    坐垫和装饰罩用于轮廓坐垫呈现座椅

    公开(公告)号:US20050179306A1

    公开(公告)日:2005-08-18

    申请号:US11029909

    申请日:2005-01-04

    摘要: A seat cushion and method of manufacturing a seat cushion suitable for use with a seat having a contour presenting device configured to move the seat cushion between a non-presented position and a presented position is disclosed. The seat cushion generally includes a substrate having a first portion and a second portion that are separated by a trench. A connector is provided for registering the substrate to a contour presenting device. The trench is designed to provide the seat cushion with a consistent, high quality craftsmanship, finish and appearance. According to one exemplary embodiment, the trench comprises a first side wall having a substantially vertical surface and a second side wall having an angled surface.

    摘要翻译: 公开了一种座垫和制造座垫的方法,所述座垫适用于具有构造成在未呈现位置和呈现位置之间移动座垫的轮廓呈现装置的座椅。 座垫通常包括具有由沟槽分隔开的第一部分和第二部分的基底。 提供了一种用于将衬底登记到轮廓呈现装置的连接器。 沟槽设计用于提供一致,高品质的工艺,完成和外观的座垫。 根据一个示例性实施例,沟槽包括具有基本垂直表面的第一侧壁和具有成角度表面的第二侧壁。