公开(公告)号：US07375031B2

公开(公告)日：2008-05-20

申请号：US11292537

申请日：2005-12-02

Applicant: Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz ,  Petra Hetzer ,  Elvira Buchholtz

Inventor： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz ,  Petra Hetzer ,  Elvira Buchholtz

IPC: H01L21/44

CPC classification number: H01L21/76886 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

Abstract translation: 通过提高金属线的纯度和晶体结构，可以提高金属线，特别是高规模铜基半导体器件的整体性能。 金属线的晶体结构的修改可以通过热处理来实现，所述热处理产生沿金属线的长度方向扫描的局部限制的加热区，和/或包括在真空环境中的加热步骤的热处理，随后 通过在还原环境中的加热步骤。

公开(公告)号：US20060246721A1

公开(公告)日：2006-11-02

申请号：US11292537

申请日：2005-12-02

Applicant: Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz

Inventor： Axel Preusse ,  Markus Keil ,  Wolfgang Buchholtz

IPC: H01L21/44

CPC classification number: H01L21/76886 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: By improving the purity of metal lines and the crystalline structure, the overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.

Abstract translation: 通过提高金属线的纯度和晶体结构，可以提高金属线，特别是高规模铜基半导体器件的整体性能。 金属线的晶体结构的修改可以通过热处理来实现，所述热处理产生沿金属线的长度方向扫描的局部限制的加热区，和/或包括在真空环境中的加热步骤的热处理，随后 通过在还原环境中的加热步骤。

公开(公告)号：US20060194349A1

公开(公告)日：2006-08-31

申请号：US11247369

申请日：2005-10-11

Applicant: Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

Inventor： Axel Preusse ,  Uwe Stoeckgen ,  Markus Nopper

IPC: H01L21/00

CPC classification number: H01L21/67046 ,  H01L21/02074 ,  H01L21/02079 ,  H01L21/32134 ,  H01L21/6708 ,  H01L21/76849

Abstract: The present invention allows correcting malfunctions occurring in the formation of a cap layer on an electrical element in a semiconductor substrate. It is detected whether a malfunction occurred in the formation of the cap layer. If a malfunction in the formation of the cap layer was detected, a rework procedure is performed. The rework procedure can comprise exposing the substrate to a first acid and a second acid.

公开(公告)号：US20060169579A1

公开(公告)日：2006-08-03

申请号：US11201970

申请日：2005-08-11

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: C25B15/08

CPC classification number: C25D21/04 ,  C25D5/08 ,  C25D17/02 ,  H01L21/2885

Abstract: The present invention is directed to methods and apparatuses for removing bubbles from a process liquid. The process liquid can comprise a plating solution used in a plating tool. The process liquid is supplied to a tank. A plurality of streams of the process liquid are directed towards a surface of the process liquid from below. This can be done by feeding the process liquid to a flow distributor comprising a plurality of openings providing flow communication between an inner volume of the flow distributor and a main volume of the tank. Before leaving the tank through an outlet, the process liquid flows through a flow barrier.

公开(公告)号：US20050067288A1

公开(公告)日：2005-03-31

申请号：US10859031

申请日：2004-06-01

Applicant: Helge Hartz ,  Markus Nopper ,  Axel Preusse

Inventor： Helge Hartz ,  Markus Nopper ,  Axel Preusse

IPC: C23C18/16 ,  C25D17/02 ,  C25D21/04 ,  C25D21/12

CPC classification number: C25D21/04 ,  C23C18/1617 ,  C23C18/1619 ,  C25D21/18

Abstract: In a storage tank for a process liquid, such as a plating liquid for a plating reactor, one or more barriers are implemented so as to define an inlet area and an outlet area, wherein a fluid flow path is substantially determined by the barrier to significantly suppress the migration of bubbles from the inlet area to the outlet area. In particular embodiments, the introduction of liquid into the storage tank is achieved by inlet lines terminating closely beneath the liquid surface so as to substantially avoid bubble generation and to remove moderately sized bubbles that are conveyed in the inlet lines.

Abstract translation: 在用于处理液体的储罐中，例如用于电镀反应器的电镀液体，实施一个或多个屏障以限定入口区域和出口区域，其中流体流动路径基本上由屏障确定以显着地 抑制气泡从入口区域到出口区域的迁移。 在具体实施方案中，通过在液体表面下方紧密地终止的入口管线来实现将液体引入储存罐中，以便基本上避免产生气泡并去除在入口管线中输送的适度大小的气泡。

公开(公告)号：US06774030B2

公开(公告)日：2004-08-10

申请号：US10304904

申请日：2002-11-26

Applicant: Gerd Marxsen ,  Axel Preusse

Inventor： Gerd Marxsen ,  Axel Preusse

IPC: H01L214763

CPC classification number: H01L22/26 ,  H01L21/3212

Abstract: In a method of in situ controlling the degree of fullness of wide lines in a damascene structure, an optical endpoint detection signal is analyzed so as to determine a time interval of substantially constant signal amplitude. The time interval is then used as a measure of the metal filled in a wide line in a damascene structure. By correlating the length of the time interval to at least one process parameter involved in the formation of the damascene structure, the degree of fullness of lines in the damascene structure may be controlled to maintain within a predefined allowable range.

Abstract translation: 在现场控制大马士革结构中宽线饱和度的方法中，分析光端点检测信号，以便确定基本恒定的信号幅度的时间间隔。 然后将时间间隔用作填充在镶嵌结构中的宽线中的金属的量度。 通过将时间间隔的长度与形成镶嵌结构中涉及的至少一个工艺参数相关联，可以控制镶嵌结构中的线的饱和度以保持在预定的允许范围内。

公开(公告)号：US08883610B2

公开(公告)日：2014-11-11

申请号：US12604703

申请日：2009-10-23

Applicant: Robert Seidel ,  Markus Nopper ,  Axel Preusse

Inventor： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/7682 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In sophisticated metallization systems, air gaps may be formed on the basis of a self-aligned patterning regime during which the conductive cap material of metal lines may be protected by providing one or more materials, which may subsequently be removed. Consequently, the etch behavior and the electrical characteristics of metal lines during the self-aligned patterning regime may be individually adjusted.

Abstract translation: 在复杂的金属化系统中，可以基于自对准图案化形态来形成气隙，在此期间金属线的导电盖材料可以通过提供一种或多种随后可以被去除的材料来保护。 因此，可以单独地调整在自对准图案化状态期间的金属线的蚀刻行为和电特性。

公开(公告)号：US08389401B2

公开(公告)日：2013-03-05

申请号：US12910979

申请日：2010-10-25

Applicant: Robert Seidel ,  Markus Nopper ,  Axel Preusse

Inventor： Robert Seidel ,  Markus Nopper ,  Axel Preusse

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/485 ,  H01L21/76846 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76879 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.

Abstract translation: 当形成复杂的半导体器件的接触电平时，可以通过在接触开口的下部中选择性地使用激活材料并使用选择性沉积技术来实现优异的底部到顶部的填充行为。 因此，即使对于高纵横比的接触开口，也可以有效地抑制诸如空隙的沉积相关的凹凸。

公开(公告)号：US07781329B2

公开(公告)日：2010-08-24

申请号：US12425498

申请日：2009-04-17

Applicant: Axel Preusse ,  Markus Nopper ,  Thomas Ortleb ,  Juergen Boemmels

Inventor： Axel Preusse ,  Markus Nopper ,  Thomas Ortleb ,  Juergen Boemmels

IPC: H01L21/4763

CPC classification number: H01L21/76828 ,  H01L21/288 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76883 ,  H01L24/13 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/00

Abstract: By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.

Abstract translation: 通过在敏感介电材料与湿化学试剂（例如电解质溶液）接触之前和/或之后引入额外的热处理，可以在制造高级半导体器件期间实现关于漏电流或介电强度的增强性能。 例如，可以基于无电沉积技术提供用于金属线的金属盖层，其中额外的热处理可以提供所需的电性能。

公开(公告)号：US20090061621A1

公开(公告)日：2009-03-05

申请号：US12045907

申请日：2008-03-11

Applicant: Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

Inventor： Axel Preusse ,  Charlotte Emnet ,  Susanne Wehner

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.