公开(公告)号：US20130007824A1

公开(公告)日：2013-01-03

申请号：US13581628

申请日：2011-06-24

Applicant: Jianhua Kong ,  Bin Yang ,  Liming Zhou

Inventor： Jianhua Kong ,  Bin Yang ,  Liming Zhou

IPC: H04N21/20

CPC classification number: H04N21/25891 ,  H04L65/4076 ,  H04N21/25

Abstract: The disclosure provides a match-rule based service message transfer method and system in the IPTV, to address the problems in the IPTV message system of message storing and backlog, low push efficiency and poor usability. In the disclosure, match fields are arranged in a set-top box and a service message to be sent, the service message is sent by means of broadcast or multicast, the set-top box performs matching for the match fields based on the match rule, and filters the message. The disclosure avoids sending a service message by means of unicast, increases the push efficiency and can greatly reduce the storage load of offline messages in a message system. The formed message may be sent according to a single or combined policy which depends on a specific service attribute, thereby greatly facilitating the service operation.

公开(公告)号：US20120260971A1

公开(公告)日：2012-10-18

申请号：US13087496

申请日：2011-04-15

Applicant: Yee-Lee Chen ,  Yu-Pei Huang ,  Wen-Bin Yang ,  Pei-Hsuan Wu

Inventor： Yee-Lee Chen ,  Yu-Pei Huang ,  Wen-Bin Yang ,  Pei-Hsuan Wu

IPC: H01L31/0203 ,  H01L31/0232 ,  H01L31/048

CPC classification number: H01L31/048 ,  H01L31/049 ,  Y02E10/50

Abstract: A method of fabricating a III-V solar cell package includes providing a solar cell having a first side and an opposite second side, forming a first insulating layer on the first side of the solar cell, forming a second insulating layer on the second side of the solar cell, forming a light-transmitting layer on the first insulating layer, forming a protection layer on the second insulating layer, and laminating the light-transmitting layer and the protection layer so as to attach the first insulating layer to the light-transmitting layer and the solar cell and to attach the second insulating layer to the protection layer and the solar cell, thereby forming a flexible solar cell package since the insulating layers, the light-transmitting layer and the protection layer are all flexible.

Abstract translation: 一种制造III-V太阳能电池组件的方法，包括提供具有第一侧和相对的第二侧的太阳能电池，在太阳能电池的第一侧上形成第一绝缘层，在第二侧上形成第二绝缘层 所述太阳能电池在所述第一绝缘层上形成透光层，在所述第二绝缘层上形成保护层，并且层叠所述透光层和所述保护层，以将所述第一绝缘层附着到所述透光层 层和太阳能电池，并且将第二绝缘层附着到保护层和太阳能电池，由此形成柔性的太阳能电池封装，因为绝缘层，透光层和保护层都是柔性的。

公开(公告)号：US20120235237A1

公开(公告)日：2012-09-20

申请号：US13488109

申请日：2012-06-04

Applicant: Man Fai NG ,  Bin YANG

Inventor： Man Fai NG ,  Bin YANG

IPC: H01L29/78

CPC classification number: H01L21/84 ,  H01L21/76267 ,  H01L21/823878 ,  H01L29/66772

Abstract: Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.

Abstract translation: 提供了用于制造在绝缘材料区域内具有阻挡区域的半导体器件的方法和装置，导致从绝缘材料区域的脱气路径。 一种方法包括在靠近半导体材料的隔离区域的绝缘材料内形成阻挡区域，并形成覆盖半导体材料的隔离区域的栅极结构。 阻挡区域与半导体材料的隔离区域相邻，导致绝缘材料内的除气路径。

公开(公告)号：US08236693B2

公开(公告)日：2012-08-07

申请号：US11748743

申请日：2007-05-15

Applicant: Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

Inventor： Wen Yu ,  Paul Besser ,  Bin Yang ,  Haijiang Yu ,  Simon S. Chan

IPC: H01L21/44

CPC classification number: H01L21/324 ,  H01L21/28052 ,  H01L29/66507 ,  H01L29/78

Abstract: The gate and active regions of a device are formed and alternating steps of applying and removing nitride and oxide layers allows exposing silicon in different areas while keeping silicon or polysilicon in other area covered with nitride. Metal layers are deposited over the exposed silicon or polysilicon and annealing forms a silicide layer in the selected exposed areas. The oxide and/or nitride layers are removed from the covered areas and another metal layer is deposited. The anneal process is repeated with silicide of one thickness formed over the second exposed areas with additional thickness of silicide formed over the previous silicide thickness.

Abstract translation: 形成器件的栅极和有源区，并且施加和去除氮化物和氧化物层的交替步骤允许在不同区域暴露硅，同时保持覆盖有氮化物的其它区域中的硅或多晶硅。 金属层沉积在暴露的硅或多晶硅上，退火在所选择的暴露区域中形成硅化物层。 氧化物层和/或氮化物层从被覆盖区域移除，另一个金属层被沉积​​。 在第二暴露区域上形成一层厚度的硅化物，并在先前的硅化物厚度上形成附加的硅化物厚度来重复退火工艺。

公开(公告)号：US20120146664A1

公开(公告)日：2012-06-14

申请号：US13397989

申请日：2012-02-16

Applicant: Rei-Fu HUANG ,  Jin-Bin YANG

Inventor： Rei-Fu HUANG ,  Jin-Bin YANG

IPC: G01R31/07

CPC classification number: G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An eFuse with at least one fuse unit is provided. The fuse unit includes a first common node providing a first reference voltage, a second common node providing a second reference voltage, at least one fuse coupled to the first common node, and a determining unit coupled between the fuse and the second common node, generating an output signal indicating whether the fuse is blown or not according to a first condition in a normal mode and a second condition in a test mode.

Abstract translation: 提供至少一个保险丝单元的eFuse。 保险丝单元包括提供第一参考电压的第一公共节点，提供第二参考电压的第二公共节点，耦合到第一公共节点的至少一个熔丝以及耦合在熔丝和第二公共节点之间的确定单元，产生 根据正常模式中的第一状态和测试模式中的第二状态，指示熔丝是否熔断的输出信号。

公开(公告)号：US20120129311A1

公开(公告)日：2012-05-24

申请号：US13355221

申请日：2012-01-20

Applicant: Rohit PAL ,  Frank Bin YANG ,  Michael J. HARGROVE

Inventor： Rohit PAL ,  Frank Bin YANG ,  Michael J. HARGROVE

IPC: H01L21/336

CPC classification number: H01L29/66636 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7848

Abstract: Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.

Abstract translation: 提供半导体晶体管器件及相关制造方法。 示例性晶体管器件包括其中限定有沟道区的半导体材料层和覆盖沟道区的栅极结构。 凹槽在与沟道区相邻的半导体材料层中形成，使得凹槽朝向沟道区不对称地延伸。 晶体管器件还包括形成在凹槽中的应力诱导半导体材料。 应力诱导半导体材料的不对称轮廓以不会加剧短通道效应的方式提高载流子迁移率。

公开(公告)号：US08143902B2

公开(公告)日：2012-03-27

申请号：US12683101

申请日：2010-01-06

Applicant: Rei-Fu Huang ,  Jin-Bin Yang

Inventor： Rei-Fu Huang ,  Jin-Bin Yang

IPC: G01R31/07

CPC classification number: G11C17/18 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An eFuse with at least one fuse unit is provided. The fuse unit includes a common node, a sensing unit with a first input terminal and a second input terminal, at least one fuse coupled between the common node and the first input terminal of the sensing unit with a resistance, and a switching unit coupled between the common node and the second input terminal of the sensing unit. A resistance of the switching unit is equivalent to a first resistance in a normal mode and equivalent to a second resistance in a test mode, and the second resistance is higher than the first resistance. The sensing unit generates an output signal indicating whether the fuse is blown or not according to the resistances of the fuse and the switching unit.

Abstract translation: 提供至少一个保险丝单元的eFuse。 保险丝单元包括公共节点，具有第一输入端和第二输入端的感测单元，耦合在公共节点与感测单元的第一输入端之间的至少一个熔丝，以及耦合在 传感单元的公共节点和第二输入端。 开关单元的电阻等于在正常模式中的第一电阻并且等于测试模式中的第二电阻，并且第二电阻高于第一电阻。 感测单元根据保险丝和开关单元的电阻产生指示熔丝是否熔断的输出信号。

公开(公告)号：USD650517S1

公开(公告)日：2011-12-13

申请号：US29363309

申请日：2010-06-08

Applicant: Chih-Ming Lai ,  Hong-Bin Yang

Designer： Chih-Ming Lai ,  Hong-Bin Yang

公开(公告)号：USD650516S1

公开(公告)日：2011-12-13

申请号：US29363308

申请日：2010-06-08

Applicant: Chih-Ming Lai ,  Hong-Bin Yang

Designer： Chih-Ming Lai ,  Hong-Bin Yang

公开(公告)号：USD650497S1

公开(公告)日：2011-12-13

申请号：US29356798

申请日：2010-03-02

Applicant: Chih-Ming Lai ,  Hong-Bin Yang ,  Ming-Young Shiao

Designer： Chih-Ming Lai ,  Hong-Bin Yang ,  Ming-Young Shiao