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    Organic light emitting display and method of fabricating the same
    21.
    发明申请
    Organic light emitting display and method of fabricating the same 有权
    有机发光显示器及其制造方法

    公开(公告)号：US20110297949A1

    公开(公告)日：2011-12-08

    申请号：US13064379

    申请日：2011-03-22

    Applicant: Won-Kyu Lee ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Byoung-Kwon Choo ,  Kyu-Sik Cho ,  Yong-Hwan Park ,  Sang-Ho Moon ,  Min-Chul Shin ,  Yun-Gyu Lee ,  Joon-Hoo Choi

    Inventor： Won-Kyu Lee ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Byoung-Kwon Choo ,  Kyu-Sik Cho ,  Yong-Hwan Park ,  Sang-Ho Moon ,  Min-Chul Shin ,  Yun-Gyu Lee ,  Joon-Hoo Choi

    IPC: H01L51/52 ,  H01L51/56

    CPC classification number: H01L27/1251 ,  H01L27/1218 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/3262

    Abstract: An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.

    Abstract translation: 一种有机发光显示器及其制造方法，所述显示器包括：包括第一薄膜晶体管区域和第二薄膜晶体管区域的基板; 衬底上的缓冲层; 缓冲层上的第一和第二半导体层; 基板上的栅极绝缘层; 栅绝缘层上分别对应于第一半导体层和第二半导体层的栅电极; 源极/漏极电极，与栅电极绝缘并分别连接到第一半导体层和第二半导体层; 衬底上的绝缘层; 连接到与第一半导体层电连接的源/漏电极的第一电极; 第一电极上的有机层; 以及有机层上的第二电极，其中与第一半导体层的源极/漏极区对应的缓冲层的部分包括金属催化剂。

    THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME
    27.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME 有权
    薄膜晶体管基板，其制造方法及其显示装置

    公开(公告)号：US20100096638A1

    公开(公告)日：2010-04-22

    申请号：US12466100

    申请日：2009-05-14

    Applicant: Byoung Kwon Choo ,  Joon Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

    Inventor： Byoung Kwon Choo ,  Joon Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

    IPC: H01L29/786 ,  H01L21/336

    CPC classification number: H01L27/124 ,  H01L27/1296 ,  H01L29/786

    Abstract: A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

    Abstract translation: 一种薄膜晶体管基板，包括基板，形成在基板上的第一和第二栅电极，形成在第一和第二栅电极上的栅极绝缘层，形成在栅极上的第一半导体和第二半导体 绝缘层，并且分别与第一栅电极和第二栅电极重叠，形成在第一半导体上并且彼此相对并且彼此分开定位的第一源电极和第一漏电极，源电极连接到 所述第一漏电极和与所述第二源电极相对并间隔开的第二漏电极，其中所述第二源电极和所述第二漏电极形成在所述第二半导体上，以及像素电极，其电连接到所述第二漏电极， 其制造方法以及具有该显示装置的显示装置。

    Phase transition method of amorphous material using cap layer
    28.
    发明授权
    Phase transition method of amorphous material using cap layer 有权
    使用盖层的非晶材料的相变方法

    公开(公告)号：US07618852B2

    公开(公告)日：2009-11-17

    申请号：US10533998

    申请日：2003-11-06

    Applicant: Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

    Inventor： Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

    IPC: H01L21/20

    CPC classification number: H01L21/02667 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/268

    Abstract: The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.

    Abstract translation: 本发明提供一种非晶材料的相变方法，包括以下步骤：将非晶材料沉积在电介质基片上; 在所述非晶材料上形成盖层; 在所述盖层上沉积金属; 并使非晶材料结晶。 根据本发明，无定形材料的表面被盖层保护，从而可以获得清洁的表面，并且在热处理和样品处理期间可以显着降低表面的粗糙度。 此外，盖层设置在非晶材料和金属之间以使金属扩散，从而可以显着降低由于金属和非晶材料在常规方法中的直接接触引起的金属污染。

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