公开(公告)号：US20210308203A1

公开(公告)日：2021-10-07

申请号：US17350751

申请日：2021-06-17

申请人： Byung-Jun Park

发明人： Byung-Jun Park

IPC分类号： A61K36/65 ,  A61K36/74 ,  A61K36/284 ,  A61K36/076 ,  A61K36/234 ,  A61P25/16 ,  A61K36/54 ,  A61K36/258 ,  A61K36/484 ,  A61K36/67 ,  A61K36/48 ,  A61K36/725

摘要： Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and nutraceutical compositions comprising the compositions and nutraceutically acceptable excipients. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, methods of reducing, alleviating, or delaying a sign or a symptom of a disorder characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.

公开(公告)号：US20210260146A1

公开(公告)日：2021-08-26

申请号：US17318593

申请日：2021-05-12

申请人： Byung-Jun Park

发明人： Byung-Jun Park

IPC分类号： A61K36/65 ,  A61K36/74 ,  A61K36/284 ,  A61K36/076 ,  A61K36/234 ,  A61P25/16 ,  A61K36/54 ,  A61K36/258 ,  A61K36/484 ,  A61K36/67 ,  A61K36/48 ,  A61K36/725

摘要： Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and pharmaceutical formulations comprising the compositions. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.

公开(公告)号：US20150263060A1

公开(公告)日：2015-09-17

申请号：US14726935

申请日：2015-06-01

申请人： Byung-Jun PARK ,  Seung-Hun Shin

发明人： Byung-Jun PARK ,  Seung-Hun Shin

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/022408 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.

摘要翻译： 提供了包括通孔结构的集成电路器件的制造方法。 所述方法可以包括通过衬底形成隔离沟槽，以形成内部衬底，其被隔离沟槽包围，并在隔离沟槽中和衬底的表面上形成绝缘层。 所述方法还可以包括形成与隔离沟槽间隔开的孔，并穿过形成在衬底表面和内衬底上的绝缘层的一部分，并在孔中和绝缘层上形成导电层 形成在基板的表面上。 该方法可用于制造图像传感器。

公开(公告)号：US08736009B2

公开(公告)日：2014-05-27

申请号：US13837356

申请日：2013-03-15

申请人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

发明人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L31/18 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

摘要翻译： 图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一 金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

公开(公告)号：US20130323875A1

公开(公告)日：2013-12-05

申请号：US13803821

申请日：2013-03-14

申请人： Byung-Jun Park ,  Seung-Hun Shin

发明人： Byung-Jun Park ,  Seung-Hun Shin

IPC分类号： H01L31/0224 ,  H01L21/768

CPC分类号： H01L27/14645 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/022408 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.

公开(公告)号：US08207590B2

公开(公告)日：2012-06-26

申请号：US12458014

申请日：2009-06-29

申请人： Byung-Jun Park ,  Sang-Hee Kim

发明人： Byung-Jun Park ,  Sang-Hee Kim

IPC分类号： H01L31/05

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

摘要： A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.

摘要翻译： 一种CMOS图像传感器的制造方法，包括在第一和第二基板之间形成包括第一基板，第二基板和包含氮和氧化物层的折射率匹配层的基板结构，并且形成至少一个光感测 装置，并且在形成所述基板结构之后，在所述第二基板的第一表面上形成金属互连结构，所述第一表面背离所述第一基板，使得所述至少一个光感测装置在所述金属 互连结构和折射率匹配层和氧化物层，金属互连结构电连接到至少一个光感测装置。

公开(公告)号：US20110111128A1

公开(公告)日：2011-05-12

申请号：US12762335

申请日：2010-04-18

申请人： BYUNG-JUN PARK ,  Jin-jong Su ,  Fang-yu Liu

发明人： BYUNG-JUN PARK ,  Jin-jong Su ,  Fang-yu Liu

IPC分类号： B05D3/10 ,  C23C16/54

CPC分类号： C23C16/4404 ,  C23C16/45565 ,  Y10T29/49826

摘要： A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 μm and 11 μm. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.

摘要翻译： 公开了一种扩散器结构及其制造方法。 扩散器结构包括基底，多个通孔和胶层。 通孔垂直地形成在基板中。 每个通孔包括气体部分，气体输出部分和用于将气体部分连接到气体输出部分的连接部分。 胶层在每个气出部分的侧壁上形成，胶层的厚度在1μm至11μm之间。 本发明可以解决在等离子体增强化学气相沉积系统中实现周期性自清洁功能之后周期性地产生颗粒的问题。

公开(公告)号：US07928488B2

公开(公告)日：2011-04-19

申请号：US12285437

申请日：2008-10-06

申请人： Byung-Jun Park

发明人： Byung-Jun Park

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14685 ,  H01L27/14627 ,  H01L27/1464

摘要： Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring layers formed on a frontside of the semiconductor substrate, inner lenses formed on a backside of the semiconductor substrate corresponding to the photoelectric transducers, and microlenses formed above the inner lenses.

摘要翻译： 示例性实施例提供单位像素，包含单位像素的图像传感器以及制造单位像素的方法。 单位像素可以包括半导体衬底，形成在半导体衬底内的光电换能器，形成在半导体衬底的前侧的多层布线层，形成在与光电换能器相对应的半导体衬底背面的内透镜，以及形成的微透镜 在内镜片之上。

公开(公告)号：US20100207226A1

公开(公告)日：2010-08-19

申请号：US12705678

申请日：2010-02-15

申请人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

发明人： Byung Jun Park ,  Yong Woo Lee ,  Chang Rok Moon

IPC分类号： H01L31/14 ,  H01L31/02 ,  H01L31/0232

CPC分类号： H01L31/18 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464

摘要： The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

摘要翻译： 图像传感器包括基板，形成在基板的第一表面上的绝缘结构，并且包括通过穿透基板的接触孔露出的第一金属布线层，形成在接触孔的侧壁上的电连接到第一 金属布线层和形成在基板的第二表面上并与第一金属布线层电连接的焊盘。

公开(公告)号：US07651908B2

公开(公告)日：2010-01-26

申请号：US11706371

申请日：2007-02-15

申请人： Gil-Sang Yoo ,  Byung-Jun Park

发明人： Gil-Sang Yoo ,  Byung-Jun Park

IPC分类号： H01L21/8242

CPC分类号： H01L27/14687

摘要： A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming a lower electrode on a substrate, forming an interlayer insulating film on the substrate, the interlayer insulating film may have a capacitor hole to expose a first portion of the lower electrode. The method may further include forming a dielectric film on at least the first portion of the lower electrode, forming a first contact hole in the interlayer insulating film to expose a second portion of the lower electrode, forming a first conductive layer in at least the first contact hole and the capacitor hole, forming a second conductive layer on the first conductive layer to fill and cover the capacitor hole and the first contact hole, and planarizing the second conductive layer to simultaneously form a capacitor plug in the capacitor hole, a first contact plug in the first contact hole, an upper electrode beneath the capacitor plug, and a first contact barrier film beneath the first contact plug.

摘要翻译： 可以提供制造图像传感器的方法，该图像传感器通过同时形成电容器结构和接触结构来降低制造成本。 该方法可以包括在基板上形成下电极，在基板上形成层间绝缘膜，层间绝缘膜可以具有电容器孔，露出下电极的第一部分。 所述方法还可以包括在所述下电极的至少第一部分上形成电介质膜，在所述层间绝缘膜中形成第一接触孔，以暴露所述下电极的第二部分，形成至少第一导电层的第一导电层 接触孔和电容器孔，在第一导电层上形成第二导电层，以填充和覆盖电容器孔和第一接触孔，并且平坦化第二导电层以同时在电容器孔中形成电容器插头，第一接触 插入第一接触孔，电容器插头下方的上电极和第一接触插塞下方的第一接触阻挡膜。