摘要:
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要:
A flat panel display, and method of fabricating the same, including a substrate having a display portion and a pad that is arranged on the substrate and is electrically coupled with the display portion. The pad includes a pad electrode arranged on the substrate, a passivation layer arranged on the pad electrode and having only one contact hole that exposes the pad electrode, and a transparent electrode arranged on the passivation layer and the pad electrode. The passivation layer may alternatively have a plurality of contact holes that expose the pad electrode. In this case, the reflective layer pattern is arranged on the passivation layer and the pad electrode, and it exposes portions of the pad electrode in the contact holes. Furthermore, the transparent electrode would be arranged on the reflective layer pattern and the exposed portions of the pad electrode.
摘要:
An electroluminescence display device that includes a thin film transistor layer formed on a substrate, at least one insulating layer formed on the thin film transistor layer, and a pixel layer, disposed on the insulating layer and including a first electrode layer, a second electrode layer, and an intermediate layer having at least an emitting layer interposed between the first electrode layer and the second electrode layer. The pixel layer includes a reflection layer that contacts either a source or drain electrode of the thin film transistor layer and is disposed below the first electrode layer, and the reflection layer includes a through hole through which the first electrode layer contacts either the source electrode or the drain electrode.
摘要:
An organic light emitting display device including a thin film transistor in first and second regions on a transparent insulating substrate, a lower anode coupled to the thin film transistor, a reflective layer pattern formed on the lower anode in the first region, an upper anode formed on the reflective layer pattern in the first region and on the lower anode in the second region, and an organic layer formed on the upper anode in the first and second regions.
摘要:
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要:
A top-emission organic electroluminescent display is disclosed. The top-emission organic electroluminescent display includes a first electrode layer having a reflective layer, a metal-silicide layer and a transparent electrode layer on a substrate; an organic layer including at least one emission layer; and a second electrode layer. The metal-silicide layer is disposed between the reflective layer and the transparent electrode layer to suppress galvanic corrosion caused at an interface of the reflective layer and the transparent electrode layer, and to stabilize a contact resistance between the layers, thereby obtaining uniform brightness in the pixels, and realizing a high quality image.
摘要:
A flat panel display, having an anti-electrostatic configuration, comprising a plurality of gate lines and data lines formed on an insulating substrate having an emission region and a pad portion, an anti-electrostatic wire initially coupling the gate lines, and an anti-electrostatic circuit coupled to a data line. The anti-electrostatic wire between a gate line and an adjacent gate line is subsequently cut by an opening for cutting the anti-electrostatic wire to electrically isolate the respective gate lines.
摘要:
An organic electroluminescence display device including a thin film transistor, a first electrode layer, a second electrode layer, and an organic layer. The thin film transistor includes a semiconductor layer, a gate electrode disposed over the semiconductor layer, and source and drain electrodes insulated from the gate electrode. The first electrode layer is coupled to either the source electrode or the drain electrode, and the first electrode layer and the gate electrode are disposed on the same layer. The second electrode layer is disposed above the first electrode layer, and an organic layer, which includes at least a light emitting layer, is interposed between the first electrode layer and the second electrode layer.
摘要:
A semiconductor device and method of fabricating the same, which forms a contact hole, a via hole or a via contact hole with multiple profiles with various taper angles. The semiconductor device includes a substrate, a thin film transistor formed on the substrate and having a semiconductor layer, a gate insulating layer, a gate electrode, and an interlayer dielectric, and a contact hole penetrating the gate insulating layer and the interlayer dielectric and exposing a portion of the semiconductor layer. The contact hole has a multiple profile in which an upper portion of the contact hole has a wet etch profile and a lower portion of the contact hole has at least one of the wet etch profile and a dry etch profile.
摘要:
An active matrix LED display apparatus and a fabrication method thereof are provided. The active matrix LED display apparatus enables to miniaturize pixel by a formation of wiring on bottom layer and an assembly of each block through each eutectic layer into each transistor block receptor and/or each LED block receptor formed according to each color element unit, and to be embodied with high luminance, low power consumption, high reliability and superior optical property by assembling a transistor block having high electron mobility. And the fabricating method of the present invention enables to make efficiently an AM-LED display apparatus at room temperature in a short time by using different shapes of receptor and block depending on the function of a transistor and/or on the color of an LED.