Abstract:
Precise CMOS bandgap voltage and current references which uses the difference of MOS source-gate voltages to perform efficient curvature compensation are proposed and analyzed. Applying the developed design strategies, bandgap voltage references (BVR) with a temperature drift below 10 ppm/.degree.C. and a power supply drift below 10 ppm/V can be realized. For bandgap current references, both drifts can be under 15 ppm. An experimental BVR chip shows an average drift of 5.5 ppm/.degree.C. from -60.degree. C. to 150.degree. C. and 25 .mu.V/V for supply voltages between 5 V and 15 V at 25.degree. C. Due to novel curvature compensation, the circuit structure of the proposed references is simple and both chip area and power consumption are small.
Abstract:
A driving circuit comprising a control unit, a current control unit, a pulse width modulation control unit and a current driving unit is described. The control unit provides a first control signal and a second control signal. The current control unit is connected to the control unit, and converts a reference current into a plurality of current setting signals based on a data signal and the first control signal. The pulse width modulation control unit is connected to the control unit and outputs a pulse signal based on the data signal and the second control signal. The current driving unit is connected to the pulse width modulation control unit and drives the light emitting diode based on a driving current, wherein the control unit generates a continuous conduction time in a predetermined operation period based on the pulse signal and the current setting signals.
Abstract:
A driving circuit comprising a control unit, a current control unit, a pulse width modulation control unit and a current driving unit is described. The control unit provides a first control signal and a second control signal. The current control unit is connected to the control unit, and converts a reference current into a plurality of current setting signals based on a data signal and the first control signal. The pulse width modulation control unit is connected to the control unit and outputs a pulse signal based on the data signal and the second control signal. The current driving unit is connected to the pulse width modulation control unit and drives the light emitting diode based on a driving current, wherein the control unit generates a continuous conduction time in a predetermined operation period based on the pulse signal and the current setting signals
Abstract:
The invention discloses a power controlling apparatus for a biochip including M regions. Each region includes a plurality of cells respectively. The power controlling apparatus includes a pulse generating module, a combinational circuit, and M controlling modules. The pulse generating module generates a pulse. The combinational circuit receives the pulse and generates M controlling signals. Each controlling signal has a predetermined phase which is different from the phase of the other controlling signal. The M controlling modules are electrically connected to the combinational circuit. Each of the M controlling signals corresponds to and activates one of the M controlling modules to selectively power on one corresponding region of the M regions. The cells in the corresponding region which is powered have an action potential refractory time that is longer than the power-on interval of the corresponding region.
Abstract:
An optical mouse chip with silicon retina structure comprises an image sensor array, an accumulator and a comparing/selecting unit. The image sensor array senses a direction parameter of an image along each axis. The accumulator sums the direction parameters of the image along different axes. The comparing/selecting unit selects a largest one from the sum of direction parameters of the image along different axes to determine a moving direction of the image.
Abstract:
An external adapter circuitry is plugged into the printer port of a host computer to provide the utility of computer telephony for the host computer. The circuitry is housed in a compact box which is about the size of a common parallel port connector. The circuitry consists of a telephone line interface for receiving and sending signals from/to the telephone line; a printer port interface for sending data to and receiving data from the host computer; a couple of registers for latching signal-in and signal-out; a A/D converter for converting analog signals to digital signals; and a D/A converter for converting digitized signals to analog signals. More specially, the electricity of the entire circuitry is supplied from a signal-to-power converter which obtains voltages from the printer port. Therefore, the external adapter circuitry does not need a power line for external power supply.
Abstract:
An electrostatic discharge (ESD) circuit for protecting a semiconductor integrated circuit (IC) device is disclosed. One ESD circuit is located between each I/O buffering pad that connects to one lead pin and the internal circuitry of IC. The ESD circuit is connected to both power terminals. The ESD circuit comprises first and second low-voltage-trigger SCRs (LVTSCRs), each having an anode, a cathode, an anode gate and a cathode gate. The anode and anode gate of the first SCR are connected to a first power terminal, the cathode of the first SCR is connected to its I/O buffering pad, and the cathode gate of the first SCR is connected to the second power terminal. The ESD circuit further comprises a PMOS transistor having drain, source, gate, and bulk terminals. The PMOS transistor's gate, source and bulk terminals are connected to the first power terminal, the PMOS transistor drain terminal is connected to the cathode gate of the first SCR. The cathode and cathode gate of the second SCR are connected to the second power terminals. The anode of the second SCR is connected to its associated I/O buffering pads. The anode gate of the second SCR is connected to the first power terminal. The ESD circuit also comprises an NMOS transistor having drain, source, gate, and bulk terminals. The NMOS transistor's gate, source and bulk terminals are connected to the second power terminals. The NMOS transistor's drain terminal is connected to the anode gate of the second SCR.
Abstract:
A CMOS dynamic logic structure has a plurality of logic gates, and the logic gates includes type-1 and type-3 logic gates alternately connected with each other. Each logic gate is separated into a function unit and a driver unit. The function unit has a PMOS precharge transistor, and a logic tree block stacked with the PMOS precharge transistor. The driver unit has an NMOS evaluation transistor, and the NMOS evaluation transistor and the PMOS precharge transistor of the previous-stage logic gate is controlled by an identical clock in order not to be turned on simultaneously.
Abstract:
A circuit for protecting a CMOS chip against damage from electrostatic discharges (ESD) has four SCRs connected between the line to be protected and the two power supply terminals, V.sub.DD and V.sub.SS. The SCRs are poled to conduct ESD current of either polarity to each power supply terminal. The bipolar transistors for the SCRs and the associated components are arranged in the chip in an advantageous way that reduces the input/output parasitic capacitance and improves the protection capability of this proposed circuit with a low ESD trigger-on voltage.