Magnetic random access memory cells with isolating liners
    21.
    发明授权
    Magnetic random access memory cells with isolating liners 有权
    具有隔离衬垫的磁性随机存取存储单元

    公开(公告)号:US09059400B2

    公开(公告)日:2015-06-16

    申请号:US14203362

    申请日:2014-03-10

    CPC classification number: H01L43/12 H01L27/222 H01L43/08

    Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

    Abstract translation: 形成存储器件的制造方法包括在磁性堆叠上形成硬掩模。 执行第一磁栈蚀刻以形成暴露的磁性层。 将衬垫施加到暴露的磁性层以形成受保护的磁性层。 第二磁栈蚀刻形成磁性随机存取存储器(MRAM)单元,其中衬垫防止受保护的磁层之间的分流。

    Magnetic Logic Units Configured to Measure Magnetic Field Direction

    公开(公告)号:US20150077098A1

    公开(公告)日:2015-03-19

    申请号:US14552326

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Magnetic Logic Units Configured to Measure Magnetic Field Direction

    公开(公告)号:US20130241536A1

    公开(公告)日:2013-09-19

    申请号:US13787585

    申请日:2013-03-06

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    APPARATUS AND METHOD FOR MAGNETIC SENSOR OUTPUT COMPENSATION BASED UPON AMBIENT TEMPERATURE

    公开(公告)号:US20200264242A1

    公开(公告)日:2020-08-20

    申请号:US16280480

    申请日:2019-02-20

    Inventor: Anuraag MOHAN

    Abstract: A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

    Apparatus and method for layout of magnetic field sensing elements in sensors

    公开(公告)号:US09766305B2

    公开(公告)日:2017-09-19

    申请号:US14801800

    申请日:2015-07-16

    CPC classification number: G01R33/098 G11C11/1659 G11C11/1673 G11C11/1675

    Abstract: An apparatus includes groups of magnetic tunnel junctions, where the magnetic tunnel junctions in each group are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The apparatus further includes a first conductive layer including conductive interconnects, a second conductive layer including straps, and a third conductive layer including field lines, each field line configured to generate a magnetic field for configuring an operating point of a corresponding subset of the magnetic tunnel junctions in each group based on a current flow through each field line. The magnetic tunnel junctions in each group are disposed between and connected to a corresponding one of the conductive interconnects and a corresponding one of the straps. The second conductive layer is disposed between the first conductive layer and the third conductive layer.

    Magnetic logic units configured to measure magnetic field direction
    28.
    发明授权
    Magnetic logic units configured to measure magnetic field direction 有权
    配置为测量磁场方向的磁逻辑单元

    公开(公告)号:US09310223B2

    公开(公告)日:2016-04-12

    申请号:US14552338

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Abstract translation: 一种装置包括电路,被配置为基于输入产生磁场的场线,被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述电路的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被构造成使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。

    Apparatus, System, and Method for Sensing Communication Signals with Magnetic Field Sensing Elements
    30.
    发明申请
    Apparatus, System, and Method for Sensing Communication Signals with Magnetic Field Sensing Elements 审中-公开
    用于感应具有磁场感测元件的通信信号的装置,系统和方法

    公开(公告)号:US20160018483A1

    公开(公告)日:2016-01-21

    申请号:US14801802

    申请日:2015-07-16

    Abstract: An apparatus includes a circuit including multiple magnetic tunnel junctions, the circuit configured to convert a quadrature modulated magnetic field to a quadrature modulated electrical signal, each magnetic tunnel junction including a storage layer having a storage magnetization and a sense layer having a sense magnetization, each magnetic tunnel junction being configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to the quadrature modulated magnetic field. The apparatus further includes a module configured to demodulate the quadrature modulated electrical signal to recover a signal encoded in the quadrature modulated magnetic field.

    Abstract translation: 一种装置包括包括多个磁隧道结的电路,该电路被配置为将正交调制磁场转换为正交调制电信号,每个磁性隧道结包括具有存储磁化的存储层和具有感测磁化的感测层, 磁隧道结被配置成使得每个磁性隧道结的感测磁化强度和阻抗响应于正交调制磁场而变化。 该装置还包括一个模块,配置成对正交调制电信号进行解调,以恢复在正交调制磁场中编码的信号。

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