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公开(公告)号：US07905197B2
公开(公告)日：2011-03-15
申请号：US12607776
申请日：2009-10-28
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: B05C5/00
CPC classification number: C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , C30B35/00 , H01L21/02625 , Y10T117/1024
Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种用于生长外延膜并将其转移到组件衬底的装置。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20100101725A1
公开(公告)日：2010-04-29
申请号：US12607776
申请日：2009-10-28
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
CPC classification number: C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , C30B35/00 , H01L21/02625 , Y10T117/1024
Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种用于生长外延膜并将其转移到组件衬底的装置。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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23.发明申请Solar-To-Electricity Conversion System Using Cascaded Architecture of Photovoltaic and Thermoelectric Devices 审中-公开使用光伏和热电器件的级联架构的太阳能到电力转换系统公开(公告)号：US20090250099A1
公开(公告)日：2009-10-08
申请号：US12418223
申请日：2009-04-03
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L31/042
CPC classification number: H01L31/052 , H01L31/0543 , H01L31/0547 , H01L35/30 , H02S10/10 , H02S40/44 , H05K1/0203 , H05K1/0274 , H05K1/0298 , H05K2201/09072 , H05K2201/10121 , Y02B10/14 , Y02B10/20 , Y02B10/70 , Y02E10/52 , Y02E10/60
Abstract: The invention addresses the area utilization and capital efficiency of systems for converting solar energy into electricity. A solid-state solar system includes photovoltaic and thermoelectric or thermionic cells. The system can be implemented in various configurations and by a solar insolation flux collection and concentration method to improve the area utilization and solar-to-electricity conversion efficiency. A thermal expansion matched multilayer board is also used to withstand ultra high concentration of solar insolation flux.
Abstract translation: 本发明涉及将太阳能转化为电力的系统的面积利用和资本效率。 固态太阳能系统包括光伏和热电或热电池。 该系统可以以各种配置和太阳能日照采集和浓缩方法实现，以提高面积利用率和太阳能到电力的转换效率。 热膨胀匹配的多层板也用于承受超高浓度太阳能日照焊剂。
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公开(公告)号：US20090250098A1
公开(公告)日：2009-10-08
申请号：US12418020
申请日：2009-04-03
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L31/058
CPC classification number: H01L31/052 , H01L31/0543 , H01L31/0547 , H01L35/30 , H02S10/10 , H02S40/44 , H05K1/0203 , H05K1/0274 , H05K1/0298 , H05K2201/09072 , H05K2201/10121 , Y02B10/14 , Y02B10/20 , Y02B10/70 , Y02E10/52 , Y02E10/60
Abstract: The invention addresses area utilization and capital efficiency of systems for converting solar energy into electricity. Methods of converting solar energy use photovoltaic cells which are arranged within a concentrated solar insolation flux path on different substrates/boards to collect different respective portions of the radiation spectrum.
Abstract translation: 本发明解决了将太阳能转化为电力的系统的面积利用率和资本效率。 将集中的太阳能日照通量路径中的太阳能利用光伏电池转换在不同的基板/板上以收集辐射光谱的不同部分的方法。
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公开(公告)号：US5892270A
公开(公告)日：1999-04-06
申请号：US862802
申请日：1997-05-23
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
CPC classification number: H01L24/86 , H01L23/3171 , H01L23/49537 , H01L2924/01004 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/30107 , Y10T29/49121
Abstract: An apparatus and method of attaching I/O pads of an integrated circuit die to package leads. The attachment is made using conventional assembly processes but without using wire bonding. A leadframe with lead fingers is formed and the lead fingers are aligned with bumps extending from the I/O pads. A connection is made by physical contact, laser spot welding, or other coupling techniques.
Abstract translation: 将集成电路管芯的I / O焊盘连接到封装引线的装置和方法。 附件使用传统的组装工艺制造，但不使用引线接合。 形成具有引线指的引线框架，并且引线指状物与从I / O焊盘延伸的突起对准。 通过物理接触，激光点焊或其它耦合技术进行连接。
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Patent Agency Ranking
公开(公告)号：US08507371B2
公开(公告)日：2013-08-13
申请号：US13487610
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/00
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US08430056B2
公开(公告)日：2013-04-30
申请号：US13047360
申请日：2011-03-14
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
CPC classification number: C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , C30B35/00 , H01L21/02625 , Y10T117/1024
Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种用于生长外延膜并将其转移到组件衬底的装置。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238084A1
公开(公告)日：2012-09-20
申请号：US13487772
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238083A1
公开(公告)日：2012-09-20
申请号：US13487610
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238079A1
公开(公告)日：2012-09-20
申请号：US13487574
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延膜并将其转移到组件衬底的方法。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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