Abstract:
A two-dimension (2D) sensing information is analyzed for determining touch related sensing information. The touch related sensing information may include touch related sensing information with inner low values within outer high values and with inner higher values within outer low values.
Abstract:
Disclosed is a control method of touch control device provided for instinctively controlling a touch control device in various manners. The control method includes steps as follows. While a touching movement is sensed on a touch panel of the touch control device, detecting a sliding trace of the touching movement; obtaining a determined result by distinguishing whether the sliding trace passes through a boundary component or not and by distinguishing whether the sliding trace passes through a edge portion of the boundary component or not; executing a presetting action according to the determined result.
Abstract:
A two transistor NOR flash memory cell has symmetrical source and drain structure manufactured by a NAND-based manufacturing process. The flash cell comprises a storage transistor made of a double-poly NMOS floating gate transistor and an access transistor made of a double-poly NMOS floating gate transistor, a poly1 NMOS transistor with poly1 and poly2 being shorted or a single-poly poly1 or poly2 NMOS transistor. The flash cell is programmed and erased by using a Fowler-Nordheim channel tunneling scheme. A NAND-based flash memory device includes an array of the flash cells arranged with parallel bit lines and source lines that are perpendicular to word lines. Write-row-decoder and read-row-decoder are designed for the flash memory device to provide appropriate voltages for the flash memory array in pre-program with verify, erase with verify, program and read operations in the unit of page, block, sector or chip.
Abstract:
The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.
Abstract:
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall.
Abstract:
A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.
Abstract:
This invention provides a device for preventing the influence of conducting material from point detection of projected capacitive touch panel. The device includes a first sensing layer having a plurality of first axial conductive lines isolated from each other and electrically connected to a plurality of first outside-connection conducting wires correspondingly, a second sensing layer having a plurality of second axial conductive lines isolated from each other and electrically connected to a plurality of second outside-connection conducting wires correspondingly, a signal driving line electrically connecting to the first and the second outside-connection conducting wires to provide a first sensing signal, and a sensing unit electrically connecting the first and the second outside-connection conducting wires to sense the sensing signal on the first and the second axial conductive lines. Wherein, the second sensing layer is on a dielectric layer, the first sensing layer, and a substrate in sequence.
Abstract:
The present invention provides a mutual capacitive multi-touch screen. The conductive strip pattern allows that, when a touch range of each external conductive object on the mutual capacitive multi-touch screen is larger than a predetermined condition, capacitive coupling between each external conductive object and first conductive strip is greater than capacitive coupling between each external conductive object and second conductive strip, such that the proportion of a driving signal flowing out of the first conductive strip via at least one first external conductive object in the external conductive objects and into the second conductive strip via at least one second external conductive object in the external conductive objects decreases as the number of second external conductive objects increases.
Abstract:
The present invention proposes a thin capacitive touch panel that includes a plurality of conductive strips, a surface glass and a hydrophobic material. The conductive strips include a grid consisting of a plurality of crisscrossed first conductive strips arranged in parallel and second conductive strips arranged in parallel. The surface glass is overlaid on the conductive strips with a thickness of less than 0.7 mm. In addition, the hydrophobic material is coated on a surface of the surface glass, forming a hydrophobic surface. When moisture is left on the hydrophobic surface after a finger sweep, the moisture is divided into a plurality of water particles by the hydrophobic surface.
Abstract:
The method and device for analyzing position are disclosed. By analyzing sensing information with at least one zero-crossing, each position can be analyzed. The number of analyzed positions may be different from the number of zero-crossings. When the number of analyzed positions is different from the number of zero-crossing, the number of analyzed positions is more than one.