公开(公告)号：US6150069A

公开(公告)日：2000-11-21

申请号：US311488

申请日：1999-05-13

Applicant: Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: C07D493/08 ,  C08F22/06 ,  C08F32/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/039 ,  G03F7/0045

Abstract: The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.

Abstract translation: 本发明涉及氧杂双环化合物及其制备方法。 本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且 表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。

公开(公告)号：US07781145B2

公开(公告)日：2010-08-24

申请号：US11935184

申请日：2007-11-05

Applicant: Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

Inventor： Geun Su Lee ,  Sam Young Kim ,  Keun Do Ban

IPC: G03F7/004

CPC classification number: G03F7/322 ,  C11D1/004 ,  C11D11/0047

Abstract: Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include H2O as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Abstract translation: 本文公开了当形成光致抗蚀剂图案时在显影步骤的最后步骤中用于清洁半导体衬底的光致抗蚀剂清洁溶液。 本文还公开了使用该溶液形成光致抗蚀剂图案的方法。 本发明的清洗溶液包括作为主要成分的H 2 O，作为添加剂的表面活性剂和任选的醇化合物。 本发明的清洗液比常规清洗液使用的蒸馏水具有更低的表面张力，从而提高了图案的崩溃性和稳定光刻胶图形的形成。

公开(公告)号：US07615338B2

公开(公告)日：2009-11-10

申请号：US11298385

申请日：2005-12-08

Applicant: Geun Su Lee ,  Seung Chan Moon ,  Seung Hun Lee

Inventor： Geun Su Lee ,  Seung Chan Moon ,  Seung Hun Lee

IPC: G03C1/73 ,  G03F7/26 ,  G03F7/36

CPC classification number: G03F7/40

Abstract: A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

Abstract translation: 包括由式1表示的化合物和水性溶剂的光致抗蚀剂涂料组合物，以及通过在光致抗蚀剂图案上涂覆该组合物以有效地减小光致抗蚀剂接触孔的尺寸和空间来形成精细图案的方法，其可以是 适用于所有半导体工艺。

公开(公告)号：US07563753B2

公开(公告)日：2009-07-21

申请号：US10317578

申请日：2002-12-12

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

IPC: C11D7/50

CPC classification number: C11D3/3738 ,  C11D1/44 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D3/373 ,  C11D3/3742 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/422

Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

Abstract translation: 公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。 清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物， 式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物 。 其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

公开(公告)号：US07150961B2

公开(公告)日：2006-12-19

申请号：US10789055

申请日：2004-02-27

Applicant: Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

CPC classification number: G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

公开(公告)号：US07138218B2

公开(公告)日：2006-11-21

申请号：US10321123

申请日：2002-12-17

Applicant: Sung Koo Lee ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

Inventor： Sung Koo Lee ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

IPC: G03F7/004

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/091 ,  Y10S430/114 ,  Y10S430/119 ,  Y10S430/12 ,  Y10S430/151

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

公开(公告)号：US07056872B2

公开(公告)日：2006-06-06

申请号：US10252467

申请日：2002-09-23

Applicant: Geun Su Lee ,  Jae Chang Chung ,  Ki Soo Shin ,  Kee Joon Oh

Inventor： Geun Su Lee ,  Jae Chang Chung ,  Ki Soo Shin ,  Kee Joon Oh

IPC: C23G1/02

CPC classification number: C11D7/10 ,  C11D7/06 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C11D11/0047 ,  G03F7/425

Abstract: Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Abstract translation: 用于除去通过光刻工艺形成的下层图案上残留的光致抗蚀剂树脂的清洁溶液，使用光致抗蚀剂图案作为蚀刻掩模。 用于除去光致抗蚀剂的清洁溶液包含作为溶剂的H 2 O 2，胺化合物，水合肼，过渡金属去除材料和碱金属去除材料。 涂覆在下层的顶部上的光致抗蚀剂可以通过公开的清洁溶液快速且有效地除去。 此外，由于使用H 2 O 2作为溶剂，清洁溶液是环境友好的，并且当金属由金属形成时，对金属层几乎没有影响。

公开(公告)号：US06849375B2

公开(公告)日：2005-02-01

申请号：US10080319

申请日：2002-02-21

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7/004 ,  G03F7/039

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/114

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2 and m are defined in the specification.

Abstract translation: 下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。在Y1， Y2，Y3，Y4，Y5，Y6，Z1，Z2和m在本说明书中定义。

公开(公告)号：US06841526B2

公开(公告)日：2005-01-11

申请号：US10280834

申请日：2002-10-25

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: H01L21/304 ,  C11D3/30 ,  C11D3/43 ,  C11D11/00 ,  G03F7/42 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D11/0047 ,  C11D3/30 ,  C11D3/43 ,  G03F7/425 ,  G03F7/426

Abstract: Cleaning solutions for removing photoresist materials and a method of forming underlying layer patterns of semiconductor devices using the same. The cleaning solutions for removing photoresist include a solvent mixture of H2O and an organic solvent, an amine compound, a transition metal-removing material and an alkali metal-removing material, and may further include a hydrazine hydrate.

Abstract translation: 用于去除光致抗蚀剂材料的清洁溶液和使用其形成下层图案的半导体器件的方法。 用于除去光致抗蚀剂的清洁溶液包括H 2 O和有机溶剂，胺化合物，过渡金属去除材料和碱金属去除材料的溶剂混合物，并且还可以包括水合肼。

公开(公告)号：US06824951B2

公开(公告)日：2004-11-30

申请号：US09947625

申请日：2001-09-06

Applicant: Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0395 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

Abstract: A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.

Abstract translation: 用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。 当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基 。