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29 条记录 (耗时 0.031 秒)

    Cleaning solution for removing photoresist
    1.
    发明授权
    Cleaning solution for removing photoresist 有权
    用于除去光致抗蚀剂的清洁溶液

    公开(公告)号：US07563753B2

    公开(公告)日：2009-07-21

    申请号：US10317578

    申请日：2002-12-12

    申请人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    发明人： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin ,  Keun Kyu Kong ,  Sung Koo Lee ,  Young Sun Hwang

    IPC分类号： C11D7/50

    CPC分类号： C11D3/3738 ,  C11D1/44 ,  C11D1/72 ,  C11D1/721 ,  C11D1/722 ,  C11D3/373 ,  C11D3/3742 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/422

    摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

    摘要翻译： 公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。 清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物， 式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物 。 其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

    Monomers for photoresist, polymers thereof, and photoresist compositions using the same
    5.
    发明授权
    Monomers for photoresist, polymers thereof, and photoresist compositions using the same 失效

    公开(公告)号：US06291131B1

    公开(公告)日：2001-09-18

    申请号：US09383547

    申请日：1999-08-26

    申请人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

    摘要： The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    6.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
    7.
    发明授权
    Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same 有权
    用于光致抗蚀剂的交联单体，以及使用其制备光致抗蚀剂聚合物的方法

    公开(公告)号：US07208260B2

    公开(公告)日：2007-04-24

    申请号：US10080507

    申请日：2002-02-22

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Balk

    IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  C08F232/00

    CPC分类号： G03F7/039 ,  C07C69/54 ,  C08F22/105 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: wherein, R′ and R″ individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明公开了由以下化学式1表示的交联单体，使用该交联单体的光致抗蚀剂聚合物的制备方法，所述光致抗蚀剂聚合物：其中，R'和R“分别表示氢或甲基 ; m表示1〜10的数; 并且R选自直链或支链C 1-10烷基，直链或支链C 1-10 1-10酯，直链或支链C 1〜 直链或支链C 1-10 1-10羧酸，直链或支链C 1-10 - 缩醛，直链或支链C 1-10 包括至少一个羟基，直链或支链C 1-10 1-10酯，包括至少一个羟基，直链或支链C 1-10 1-10酮，包括 至少一个羟基，包括至少一个羟基的直链或支链C 1-10 - 羧酸，和包含至少一个羟基的直链或支链C 1-10 - 组。

    Additives for improving post exposure delay stability of photoresist
    8.
    发明授权
    Additives for improving post exposure delay stability of photoresist 失效
    用于改善光刻胶曝光延迟稳定性的添加剂

    公开(公告)号：US06514665B1

    公开(公告)日：2003-02-04

    申请号：US09651809

    申请日：2000-08-30

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： The present invention relates to a compound that is useful as an additive for improving post exposure delay stability in a photoresist composition, and a photoresist composition containing the same. In particular, it has been found that a compound of the formula: where A, R1 to R3 are defined herein, can efficiently prevent or reduce the phenomenon of a lack of pattern formation and T-topping resulting from post exposure delay (PED) by reducing influences of environmental amine compounds. PED is a disadvantage of alicyclic compounds used in the lithography process using light sources such as KrF, ArF, VUV, E-beam, ion beam and EUV.

    摘要翻译： 本发明涉及可用作改善光致抗蚀剂组合物中的曝光后延迟稳定性的添加剂的化合物和含有它们的光致抗蚀剂组合物。 特别地，已经发现，下式化合物：其中A，R 1至R 3在本文中定义，可以有效地防止或减少由后曝光延迟（PED）引起的图案形成和T形顶部缺乏的现象 减少环境胺化合物的影响。 PED是使用诸如KrF，ArF，VUV，电子束，离子束和EUV的光源的光刻工艺中使用的脂环族化合物的缺点。

    Liquid Composition for Immersion Lithography and Lithography Method Using the Same
    9.
    发明申请
    Liquid Composition for Immersion Lithography and Lithography Method Using the Same 审中-公开
    用于浸没光刻的液体组合物和使用其的平版印刷方法

    公开(公告)号：US20080176047A1

    公开(公告)日：2008-07-24

    申请号：US11767275

    申请日：2007-06-22

    申请人： Keun Kyu Kong ,  Hyoung Ryeun Kim ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Sung Koo Lee

    发明人： Keun Kyu Kong ,  Hyoung Ryeun Kim ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Sung Koo Lee

    IPC分类号： G03C1/73 ,  B41M5/00 ,  G03F7/26 ,  G03B27/42

    CPC分类号： G03F7/2041 ,  G03F7/70341 ,  Y10T428/24802

    摘要： Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.

    摘要翻译： 本文公开了用于浸没式光刻的液体组合物和使用该组合物的光刻方法。 液体组合物包含至少一种非离子表面活性剂，其选自聚乙烯醇，季戊四醇基化合物，含有烯化氧的聚合物和由式I表示的化合物：其中R是直链或支链的取代的C C 1 -C 40烷基，n是10至10,000的整数。 通过非离子表面活性剂降低液体组合物的表面张力，从而解决液体组合物未完全填充或部分浓缩在具有细微拓扑结构的晶片上并且去除光致抗蚀剂膜和液体组合物之间的微小气泡的问题。

    Method of inhibiting pattern collapse using a relacs material
    10.
    发明授权
    Method of inhibiting pattern collapse using a relacs material 失效
    使用relacs材料抑制图案折叠的方法

    公开(公告)号：US06703323B2

    公开(公告)日：2004-03-09

    申请号：US10319059

    申请日：2002-12-13

    申请人： Keun Kyu Kong ,  Sung Koo Lee

    发明人： Keun Kyu Kong ,  Sung Koo Lee

    IPC分类号： H01L2131

    CPC分类号： H01L21/0276 ,  G03F7/11 ,  H01L21/312

    摘要： A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material on an underlying layer before coating photoresist material thereon and then heating the layer to inhibit pattern collapse.

    摘要翻译： 本文公开了使用相关性抑制图案折叠的方法（通过化学收缩辅助的抗蚀剂增强光刻）。 更具体地说，本发明涉及一种通过在将光致抗蚀剂材料涂覆在其上并且然后加热该层以抑制图案塌陷之后，将相关材料涂覆在下层上来形成光致抗蚀剂图案的方法。