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    Primer tank with nozzle assembly
    21.
    发明申请
    Primer tank with nozzle assembly 审中-公开
    带喷嘴总成的底池

    公开(公告)号：US20050051087A1

    公开(公告)日：2005-03-10

    申请号：US10658709

    申请日：2003-09-08

    Applicant: Kuo-Hsing Teng ,  Chia-Ray Tzou ,  Richard Peng ,  Jian-Hong Chen

    Inventor： Kuo-Hsing Teng ,  Chia-Ray Tzou ,  Richard Peng ,  Jian-Hong Chen

    IPC: C23C16/00 ,  H01L21/00

    CPC classification number: H01L21/6708

    Abstract: A primer tank having a nozzle assembly which uniformly distributes nitrogen or other vapor-generating gas against a primer liquid in the tank to generate a primer vapor for the priming of a semiconductor wafer substrate. The nozzle assembly includes a conduit to which is confluently attached a nozzle head having a nozzle plate. Multiple openings are provided in the nozzle plate to substantially uniformly distribute nitrogen or other inert gas against the surface of the primer liquid over a large area to generate a primer mist from the primer liquid and substantially reduce the formation of primer droplets in the tank.

    Abstract translation: 一种底漆罐，其具有喷嘴组件，其将氮气或其他产生气体的气体均匀地分配在罐中的底漆液体上，以产生用于半导体晶片衬底的底漆的底漆蒸气。 喷嘴组件包括导管，其汇合地附接有具有喷嘴板的喷嘴头。 在喷嘴板中设置多个开口，以在大面积上大致均匀地将氮气或其它惰性气体均匀地分布在底漆液体的表面上，以从底漆液体产生底漆，并大大减少油箱中底漆液滴的形成。

    Ring-opened polymer
    23.
    发明授权
    Ring-opened polymer 有权
    开环聚合物

    公开(公告)号：US06207779B1

    公开(公告)日：2001-03-27

    申请号：US09213938

    申请日：1998-12-17

    Applicant: Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Tai-Sheng Yeh ,  Jui-Fa Chang

    Inventor： Sheng-Yueh Chang ,  Bang-Chein Ho ,  Jian-Hong Chen ,  Tai-Sheng Yeh ,  Jui-Fa Chang

    IPC: C08F23208

    CPC classification number: C08G61/08 ,  Y10S526/916

    Abstract: The present invention provides a ring-opened polymer, which is prepared by reacting at least one pericyclic olefin elected from those represented by formulae (I) and (II) through ring-opening metathesis polymerization wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur,  —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl; each R is independently selected from hydrogen, halogen, and C1-20 alkyl; and each n is an integer from 1 to 6.

    Abstract translation: 本发明提供一种开环聚合物，其通过使由式（I）和（II）表示的那些所选择的至少一种环氧烯烃通过开环易位聚合反应制备，其中A和B可以相同或不同，并且独立地 选自卤素，氢，C 3-20环状或环脂族烷基，C 1-20直链和支链烷基，C6-20芳基，C7-20芳基烷基，C7-20烷基芳基，甲硅烷基，烷基甲硅烷基，甲基，烷基锗烷基，烷氧基羰基 ，酰基和杂环基团; 或者A和B连接在一起形成C3-20饱和或不饱和环状烃基或取代或未取代的杂环基; C选自氧，硫，-CH 2 - 和-SiH 2 - ，其中 每个R 1独立地选自C 1-20烷基和苯基;每个R独立地选自氢，卤素和C 1-20烷基; 而且n是1到6的整数。

    Nano/micro-patterned optical device and fabrication method thereof
    24.
    发明授权
    Nano/micro-patterned optical device and fabrication method thereof 有权
    纳米/微图案光学器件及其制造方法

    公开(公告)号：US08224142B2

    公开(公告)日：2012-07-17

    申请号：US12533579

    申请日：2009-07-31

    Applicant: Lon Wang ,  Jian-Hong Chen ,  Shih-Min Chuo

    Inventor： Lon Wang ,  Jian-Hong Chen ,  Shih-Min Chuo

    IPC: G02B6/10

    CPC classification number: G02B6/2934 ,  G02B6/107

    Abstract: A nano/micro-patterned optical device includes a soft film substrate and nano/micro thin wires. A surface of the soft film substrate includes a nano/micro-pattern formed through a lithography process, and the nano/micro-pattern includes a plurality of depressed grooves. The nano/micro thin wires are placed in the depressed grooves, and used to form a plurality of optical waveguides, in which the optical waveguides include at least one optical coupling region, and the optical coupling region is located on a joining position of the optical waveguides. A fabrication method of the nano/micro-patterned optical device is also provided.

    Abstract translation: 纳米/微图案光学器件包括软膜衬底和纳米/微细线。 软膜基板的表面包括通过光刻工艺形成的纳米/微图案，并且纳米/微图案包括多个凹槽。 纳米/微细线被放置在凹槽中，用于形成多个光波导，其中光波导包括至少一个光耦合区域，并且光耦合区域位于光学波导的接合位置 波导。 还提供了纳米/微图案化光学器件的制造方法。

    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY
    25.
    发明申请
    MATERIAL AND METHOD FOR PHOTOLITHOGRAPHY 有权
    光刻技术的材料与方法

    公开(公告)号：US20120009524A1

    公开(公告)日：2012-01-12

    申请号：US13238335

    申请日：2011-09-21

    Applicant: Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    Inventor： Hsiao-Wei Yeh ,  Jen-Chieh Shih ,  Jian-Hong Chen

    IPC: G03F7/20 ,  H01L21/312

    CPC classification number: G03F7/0397 ,  G03F7/11 ,  G03F7/168 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

    Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

    Abstract translation: 用于半导体制造的感光材料包括共聚物，其包括多个光致抗蚀剂链和多个疏水链，每个疏水链连接到一个光致抗蚀剂链的末端。 响应于外部施加的能量的共聚物将自组装到光致抗蚀剂层和疏水层。

    Double patterning strategy for contact hole and trench in photolithography
    26.
    发明授权
    Double patterning strategy for contact hole and trench in photolithography 有权
    光刻中接触孔和沟槽的双重图案化策略

    公开(公告)号：US08048616B2

    公开(公告)日：2011-11-01

    申请号：US12047086

    申请日：2008-03-12

    Applicant: Feng-Cheng Hsu ,  Jian-Hong Chen

    Inventor： Feng-Cheng Hsu ,  Jian-Hong Chen

    IPC: G03F7/26

    CPC classification number: H01L21/0271 ,  H01L21/31144

    Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

    Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，第一抗蚀剂图案在基板上包括多个开口; 在所述基板上和所述第一抗蚀剂图案的所述多个开口内形成第二抗蚀剂图案，所述第二抗蚀剂图案在所述基板上包括至少一个开口; 以及去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的基板。

    Method of forming a dual damascene structure
    27.
    发明授权
    Method of forming a dual damascene structure 失效
    形成双镶嵌结构的方法

    公开(公告)号：US07749904B2

    公开(公告)日：2010-07-06

    申请号：US11748574

    申请日：2007-05-15

    Applicant: Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

    Inventor： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

    IPC: H01L21/44

    CPC classification number: H01L21/76808

    Abstract: An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

    Abstract translation: 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

    Method of forming a dual damascene structure
    28.
    发明授权
    Method of forming a dual damascene structure 有权
    形成双镶嵌结构的方法

    公开(公告)号：US07241682B2

    公开(公告)日：2007-07-10

    申请号：US10789083

    申请日：2004-02-27

    Applicant: Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

    Inventor： Bang-Chein Ho ,  Jian-Hong Chen ,  Da-Jhong Ou Yang

    IPC: H01L21/4763

    CPC classification number: H01L21/76808

    Abstract: An improved method of forming an integrated circuit that includes a dual damascene interconnect is described. A contact via hole is formed in a dielectric layer disposed above a semiconductor substrate. A protective layer is disposed on top of the dielectric layer and in the contact via hole, and subsequently forming as a recessed plug in the via, followed by etching to form a trench to complete formation of a dual damascene opening.

    Abstract translation: 描述了一种形成包括双镶嵌互连的集成电路的改进方法。 在设置在半导体衬底上的电介质层中形成接触通孔。 保护层设置在电介质层的顶部和接触通孔中，随后在通孔中形成凹入的塞子，然后蚀刻以形成沟槽以完成双镶嵌开口的形成。

    Method for forming dual damascene interconnect structure
    30.
    发明申请
    Method for forming dual damascene interconnect structure 审中-公开
    双镶嵌互连结构的形成方法

    公开(公告)号：US20050170638A1

    公开(公告)日：2005-08-04

    申请号：US10768217

    申请日：2004-01-30

    Applicant: Bang-Ching Ho ,  Jian-Hong Chen

    Inventor： Bang-Ching Ho ,  Jian-Hong Chen

    IPC: H01L21/44 ,  H01L21/4763 ,  H01L21/768

    CPC classification number: H01L21/76808

    Abstract: A method for forming dual damascene structures within a semiconductor device utilizes a plug material that is soluble in alkaline developers such as 2.38 wt % TMAH. The plug material is introduced into openings initially formed in a dielectric film and extends up to at least the top surface of the dielectric film. The plug material is polymeric in nature and is baked to cross link the polymeric material. The dielectric layer with openings filled with the cross-linked plugged material is patterned and etched to produce dual damascene openings.

    Abstract translation: 在半导体器件内形成双镶嵌结构的方法利用了可溶于碱性显影剂例如2.38wt％TMAH的塞子材料。 将插塞材料引入初始形成在电介质膜中的开口中，并延伸到至少绝缘膜的顶表面。 塞子材料本质上是聚合物，并且被烘烤以交联聚合材料。 具有填充有交联的堵塞材料的开口的电介质层被图案化和蚀刻以产生双镶嵌开口。

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