公开(公告)号：US06811899B2

公开(公告)日：2004-11-02

申请号：US10107194

申请日：2002-03-28

Applicant: Kenichi Inoue

Inventor： Kenichi Inoue

IPC: B32B1518

CPC classification number: C23C30/005 ,  Y10S76/11 ,  Y10T428/31678

Abstract: A coated tool for warm-and/or-hot working with a superior galling resistance property and a superior wear resistance, comprising: a base material selected from the group consisting of a hot die steel and a high speed steel; and a coating as a working surface, the coating having: a layer “a” provided on said base material, the layer “a” being made of at least one kind selected from the group consisting of a nitride, a carbide and a carbonitride, each of which contains as the main constituent thereof at least one metal element selected from the group consisting of Ti, V, Cr, Al and Si; and a layer “b” provided on the layer “a”, the layer “b” being made of a sulfide.

Abstract translation: 一种用于耐热和/或热加工的涂层工具，具有优异的耐磨损性和优异的耐磨性，包括：选自热模钢和高速钢的基材; 以及作为工作面的涂层，所述涂层具有：设置在所述基材上的层“a”，所述层“a”由选自氮化物，碳化物和碳氮化物中的至少一种制成， 其各自含有选自Ti，V，Cr，Al和Si中的至少一种金属元素作为其主要成分; 以及设置在层“a”上的层“b”，层“b”由硫化物制成。

公开(公告)号：US06285045B1

公开(公告)日：2001-09-04

申请号：US08890991

申请日：1997-07-10

Applicant: Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

Inventor： Kazuo Itabashi ,  Osamu Tsuboi ,  Yuji Yokoyama ,  Kenichi Inoue ,  Koichi Hashimoto ,  Wataru Futo

IPC: H01L2710

CPC classification number: H01L27/10852 ,  H01L21/76897 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/10817 ,  H01L28/91

Abstract: A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.

Abstract translation: 一种半导体存储器件，包括：覆盖栅电极的上表面和侧表面的第一绝缘膜; 形成在覆盖所述第一绝缘膜的所述基板上的第二绝缘膜; 形成在所述第二绝缘膜上并到达所述杂质扩散区的一对接触孔; 嵌入在所述接触孔之一中的导电插塞; 第三绝缘膜，形成在覆盖所述导电插塞的所述第二绝缘膜上，并且在所述另一个接触孔上具有第一孔; 形成在第三绝缘膜上并通过第一孔和另一个接触孔连接到另一个杂质扩散区的位线; 覆盖位线的上表面和侧表面的第四绝缘膜; 与覆盖所述位线的侧面的所述第四绝缘膜对准的通过所述第三绝缘膜形成的第二孔; 存储电极，其形成为在所述位线上延伸，通过所述第三和第四绝缘膜与所述位线绝缘，并且通过所述第二孔电连接到所述导电插塞。

公开(公告)号：US06224687B1

公开(公告)日：2001-05-01

申请号：US09131886

申请日：1998-08-10

Applicant: Kenichi Inoue

Inventor： Kenichi Inoue

IPC: C23C826

CPC classification number: C22C38/18 ,  C22C38/42 ,  C23C8/26

Abstract: The invention provides a piston ring and piston ring material with excellent properties since not only it has excellent properties as a piston ring, but also excellent in drawability and rolling workability in the manufacturing process of stock, very excellent bending workability can be attained even when relatively high hardness after heat treatment is established, and excellent in properties as a piston ring. The piston ring material essentially consists, by weight of 0.2 to 1.2% C, 5.0 to 25.0% Cr and the balance Fe and incidental impurities, M7C3 type carbide content existing in the structure being 4.0% or less in terms of area percent to attain excellent scuffing resistance and workability. Preferably, C is 0.2 to 0.7%, and Cr is not less than 5.0% but less than 12.0%. Cr (wt. %)/C (wt. %) is 12 to 45, preferably 15 to 45, more preferably 18 to 30. In addition, the piston ring material of the present invention may contain not more than 0.25% Si, not more than 0.30% Mn, at least one not more than 2.5% in total selected from the group consisting of Mo, W, V and Nb, not more than 4.0% Cu, not more than 2.0% Ni, not more than 1.5% Al.

Abstract translation: 本发明提供了具有优异性能的活塞环和活塞环材料，不仅具有作为活塞环的优良性能，而且在坯料制造过程中具有优异的可拉伸性和滚动加工性，即使相对而言也能获得极好的弯曲加工性 建立了热处理后的高硬度，并且作为活塞环的性能优异。 活塞环材料基本上以重量计为0.2〜1.2％C，5.0〜25.0％Cr，余量为Fe和附带杂质，结构中存在的M7C3型碳化物含量占面积百分比为4.0％以下，达到优异 抗磨损和可加工性。 优选C为0.2〜0.7％，Cr不小于5.0％但小于12.0％。 Cr（重量％）/ C（重量％）为12〜45，优选为15〜45，更优选为18〜30。另外，本发明的活塞环材料可以含有不超过0.25％的Si， 选自Mo，W，V和Nb中的至少一种不超过2.5％的Mn，不超过4.0％的Cu，不大于2.0％的Ni，不超过1.5％的Al， 。

公开(公告)号：US6027222A

公开(公告)日：2000-02-22

申请号：US108740

申请日：1998-07-01

Applicant: Yoji Oki ,  Kenichi Inoue

Inventor： Yoji Oki ,  Kenichi Inoue

IPC: G09F9/00 ,  F21V8/00 ,  F21V7/04

CPC classification number: G02B6/0038

Abstract: A back light device for a liquid crystal display is provided, which comprises diffusing prisms formed on the surface of the light guide plate, and the apical angle of the diffusing prism is set in the range of 65-85 degrees for a uniform and brighter illumination using the same light source.

Abstract translation: 提供了一种用于液晶显示器的背光装置，其包括形成在导光板表面上的扩散棱镜，并且扩散棱镜的顶角设置在65-85度的范围内，以获得均匀和更亮的照明 使用相同的光源。

公开(公告)号：US5953619A

公开(公告)日：1999-09-14

申请号：US40284

申请日：1998-03-18

Applicant: Hisashi Miyazawa ,  Kenichi Inoue ,  Tatsuya Yamazaki

Inventor： Hisashi Miyazawa ,  Kenichi Inoue ,  Tatsuya Yamazaki

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/20

CPC classification number: H01L28/55

Abstract: A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.

Abstract translation: 一种制造半导体器件的方法，具有以下步骤：在半导体衬底上形成第一导电类型的绝缘栅场效应晶体管; 在所述半导体衬底上形成第一绝缘膜，所述第一绝缘膜覆盖所述绝缘栅电极; 通过所述第一绝缘膜形成到所述源极/漏极区域中的至少一个的接触窗口; 在接触窗中嵌入金属塞子; 在所述第一绝缘膜上形成具有阻氧功能的第二绝缘膜，所述第二绝缘膜覆盖所述金属插塞; 在所述第二绝缘膜上形成电容器下电极; 在下电极上形成具有钙钛矿晶体结构的电介质氧化物膜; 在含氧气氛中退火半导体衬底; 以及在所述电介质氧化膜上形成电容器上电极。 可以实现具有具有高介电常数的钙钛矿晶体结构的电介质氧化物膜的电容器的半导体器件。

公开(公告)号：US5569919A

公开(公告)日：1996-10-29

申请号：US530408

申请日：1995-09-19

Applicant: Kazushi Yokoyama ,  Norio Suzuki ,  Kenichi Inoue ,  Yukito Furukawa

Inventor： Kazushi Yokoyama ,  Norio Suzuki ,  Kenichi Inoue ,  Yukito Furukawa

IPC: G01N23/225 ,  G01Q60/44 ,  G21K1/06 ,  H01J49/08

CPC classification number: G01N23/2252

Abstract: An X-ray analytical apparatus of a wavelength dispersion type having a construction of essential parts improved using a microprobe of ion beam. An ion beam 10 is controlled to be deflected to scan in a fine region of a sample 3, a characteristic X-ray generated by irradiation of the ion beam is subjected spectro-process by a analyzing element 5 set to a predetermined radius of curvature by a curvature changing mechanism, and an X-ray having a specific wavelength selected by the spectro-process is detected by a proportional counter 7. When an angle of the analyzing element is set by a rotational stage to an incident angle of a specific X-ray determined by a detection element on the sample 3, a wide range of wavelength can be subjected to spectro-measured while the sample 3, the analyzing element 5 and the proportional counter 7 remain fixed in position. Since the proportional counter 7 is provided with a lengthy sensing portion, even if an incident position of the X-ray is changed, measurement can be made while a position of a detector remains fixed. Being a position sensitive type detector, incident position information of the X-ray different according to the wavelength can be removed, and the wavelength and strength of the X-ray can be measured while discriminating each X-ray quantum.

Abstract translation: 一种具有使用离子束的微探针改进的基本部件结构的波长分散型的X射线分析装置。 控制离子束10被偏转以在样品3的细微区域扫描，通过离子束的照射产生的特征X射线被分析元件5进行分光处理，分析元件5被设定为预定的曲率半径， 通过比例计数器7检测曲率变化机构和具有通过分光处理选择的特定波长的X射线。当将分析元件的角度设定为特定X射线的入射角时， 通过样品3上的检测元件确定的光线，可以在样品3，分析元件5和比例计数器7保持固定的位置的同时对宽范围的波长进行光谱测量。 由于比例计数器7设置有长度感测部分，所以即使X射线的入射位置改变，也可以在检测器的位置保持固定的情况下进行测量。 作为位置敏感型检测器，可以除去根据波长不同的X射线的入射位置信息，并且可以在区分每个X射线量子的同时测量X射线的波长和强度。

公开(公告)号：US5376521A

公开(公告)日：1994-12-27

申请号：US141111

申请日：1993-10-21

Applicant: Kenichi Inoue ,  Takuji Hasegawa ,  Yuji Hosoi ,  Yorihiro Yamaya ,  Akiko Suzuki

Inventor： Kenichi Inoue ,  Takuji Hasegawa ,  Yuji Hosoi ,  Yorihiro Yamaya ,  Akiko Suzuki

IPC: G03C1/015 ,  G03C1/005 ,  G03C1/035 ,  G03C1/06 ,  G03C1/09 ,  G03C1/12 ,  G03C5/17 ,  G03C5/30

CPC classification number: G03C1/09 ,  G03C1/0051 ,  G03C1/015 ,  G03C5/17

Abstract: A silver halide photographic light-sensitive material comprising a support bearing on both sides thereof a silver halide emulsion layer containing a silver halide emulsion comprising monodispersed and spectrally-sensitized silver halide tabular grains having an average aspect ratio of grain diameter to grain thickness of from not less than 2 to less than 8 and accounting for at least 70% of the total projected area of the grains contained in the silver halide emulsion and a method of preparing the silver halide emulsion are disclosed, wherein the silver halide emulsion is chemically sensitized in the presence of iodide-containing silver halide fine grains, thus chemically-sensitized emulsion having a value of 100 mV or less with respect to a silver electrode potential at 50.degree. C.

Abstract translation: 一种卤化银照相感光材料，其包括两侧的支承体，该卤化银乳剂层含有包含单分散和光谱增感的卤化银片状颗粒的卤化银乳剂，所述卤化银乳剂的晶粒直径与晶粒厚度的平均纵横比为 小于2至小于8，并且占卤化银乳剂中所含谷物总投影面积的至少70％，并且公开了制备卤化银乳剂的方法，其中卤化银乳剂在 含有碘化物的卤化银细粒，因此相对于50℃的银电极电位具有100mV以下的化学致敏乳液

公开(公告)号：US5339436A

公开(公告)日：1994-08-16

申请号：US7010

申请日：1993-01-21

Applicant: Hirokazu Tairaku ,  Kenichi Inoue ,  Chiaki Ito ,  Kenji Takimoto ,  Shigetoshi Tanido

Inventor： Hirokazu Tairaku ,  Kenichi Inoue ,  Chiaki Ito ,  Kenji Takimoto ,  Shigetoshi Tanido

IPC: G05B19/414 ,  G05B19/418 ,  G06F9/445 ,  G06F9/45

CPC classification number: G06F9/44521 ,  G05B19/4142 ,  G05B19/4181 ,  G06F9/45508 ,  G05B2219/33085 ,  G05B2219/33087 ,  G05B2219/33162 ,  G05B2219/33164 ,  G05B2219/33169 ,  G05B2219/33226 ,  G05B2219/33323 ,  G05B2219/34356 ,  G05B2219/34421 ,  G05B2219/34453 ,  G05B2219/35547 ,  G05B2219/36031 ,  G05B2219/36112 ,  G05B2219/36371 ,  Y02P90/06 ,  Y02P90/14

Abstract: Another object is to enable different types of control instructions to coexist, wherein an address converter table is used to rapidly shift addresses in a memory without adversely affecting other operations. A method of controlling a manufacturing line using a central processing unit, wherein the various addresses in a memory are rapidly shifted using an address converter table so that different types of control instructions, such as compiler and interpreter languages, can coexist without any adverse affects. The method enables utilization of a high speed CPU and low speed I/O devices.

Abstract translation: 另一个目的是使得不同类型的控制指令能够共存，其中地址转换器表用于快速地移动存储器中的地址而不会不利地影响其他操作。 一种使用中央处理单元控制生产线的方法，其中存储器中的各种地址使用地址转换器表快速移位，使得诸如编译器和解释器语言的不同类型的控制指令可以共存而没有任何不利影响。 该方法可以利用高速CPU和低速I / O设备。

公开(公告)号：US5065343A

公开(公告)日：1991-11-12

申请号：US311007

申请日：1989-02-14

Applicant: Kenichi Inoue

Inventor： Kenichi Inoue

IPC: G06F3/14 ,  G06F3/153 ,  G06F9/445 ,  G09G5/02 ,  G09G5/06 ,  G09G5/14 ,  G09G5/34 ,  G09G5/36 ,  G09G5/39 ,  G09G5/397 ,  G09G5/40

CPC classification number: G09G5/397 ,  G06F3/1423 ,  G06F3/153 ,  G06F9/4403 ,  G09G5/06 ,  G09G5/14 ,  G09G5/363 ,  G09G5/40 ,  G06F3/1438 ,  G09G2340/12 ,  G09G2352/00 ,  G09G5/34

Abstract: A graphic display system comprising a plurality of graphic display units which are connected to a host processor through a common bus and providing useful quick response characteristics as a man-machine interface for process control, wherein a common memory of two ports, one of which is connected to the common bus and the other is connected to an internal bus, is provided in each graphic display unit and a part of the common memory is used for transmission of high level command/data with the host processor and comprises a FIFO (i.e. first in first out) buffer.

Abstract translation: 一种图形显示系统，包括多个图形显示单元，所述多个图形显示单元通过公共总线连接到主处理器，并提供有用的快速响应特性作为用于过程控制的人机界面，其中两个端口的公共存储器 连接到公共总线，另一个连接到内部总线，设置在每个图形显示单元中，并且公共存储器的一部分用于与主处理器传输高级命令/数据，并且包括FIFO（即，第一 先出）缓冲区。

公开(公告)号：US4864449A

公开(公告)日：1989-09-05

申请号：US203257

申请日：1988-05-27

Applicant: Kenichi Inoue ,  Takahide Ohtani

Inventor： Kenichi Inoue ,  Takahide Ohtani

IPC: G11B15/26 ,  G11B15/30 ,  G11B15/32 ,  G11B15/675 ,  G11B23/087 ,  G11B25/06 ,  G11B23/02

CPC classification number: G11B25/066 ,  G11B15/32 ,  G11B15/67547 ,  G11B23/087

Abstract: A cassette tape recording and/or reproducing apparatus capable of selectively loading at least two tape cassettes whose respective spaces between reels differ from each other, has a pair of reel bases moved to be made to coincide with either of the spaces between the reels, a pair of position reference pins used in common to put either of the two tape cassettes in a horizontally and vertically exact position, and a pair of height reference pins moved together with the pair of reel bases to put either of the two tape cassettes in a vertically exact position, so that the bottom face, the front face and the central plane equidistant from a pair of reels of the cassette are exactly put in respective predetermined normal face or plane positions.